annealing condition 中文意思是什麼
annealing condition
解釋
退火狀態-
And then, we measured x - ray diffractive spectrum of samples and investigated the crystal lattice structure of samples treated under different annealing temperature and different implantation condition comparing the diffraction peaks
然後，通過x射線衍射測量了樣品的衍射譜，通過比較不同樣品衍射峰的形狀，了解了不同退火溫度及注入條件下樣品的晶格結構情況。 -
Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。 -
In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth
本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。 -
In the end, the combination of gui exploited by the script language tcl / tk and the pack of the simulate annealing genetic algorithm by c is mentioned in this papaer, which leads to the implementation of an simple tool cctt that can produce the case of combination of condition covering test
最後本文將tcl / tk腳本語言開發的gui與c實現的模擬退火遺傳演算法包結合，實現了一個能自動生成條件組合覆蓋測試數據的簡單工具cctt 。 -
In this paper, relevant algorithm of the automatic producing test case will be discussed, furthermore, the simulate annealing genetic algorithm of automatic producing the case of combination of condition covering test, and the orthogonal latin squares method of the automatic producing the case of combination of input variant covering test are offered in the paper
本文討論了自動生成測試數據的相關演算法，並在此基礎上，給出了能自動生成條件組合覆蓋測試數據的模擬退火遺傳演算法以及可自動生成輸入變量值組合覆蓋測試數據的正交拉丁方方法。 -
The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4, which makes the procedure more convenient and the sedimentation more compact. based on the syntheses of the raw materials, the czochralski method was used to grow the crystal from different charges. by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition, the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing, but is related to the impurity of the charges
採用多種方法合成了用於晶體生長的yvo _ 4原料，改進了液相合成法中獲得yvo _ 4沉澱的方法，使得該方法更為簡便，獲得的沉澱更加緻密；在原料合成的基礎上，採用提拉法對來源不同的生長原料進行了生長，並通過對在相同氣氛下生長的晶體的紫外透過譜線的對比，指出了該吸收峰的存在與晶體生長方向及有無退火無關，進而提出該吸收峰的存在與合成原料中有無雜質有關。 -
The effect of deposited condition, include substrate temperatures, different substrates and annealing on the structural properties of zno films has been studied in considerable detail. it is found that the optimal conditions to deposit zno are below : the substrate temperature of 450c, the substrate of sapphire. the sample on this condition is 0. 3491
通過分析襯底溫度、不同襯底和退火對樣品結構的影響，得到了樣品的最佳制備條件：襯底溫度450 、藍寶石襯底，此條件下制備的樣品具有高度（ 002 ）取向性， （ 002 ）衍射峰半高寬僅僅0 . 3491 ，原子力顯微鏡（ afm ）分析表明zno薄膜具有密集堆積的均勻柱狀晶粒。 -
Now if we suppose that the rated temperature limit of any chip were identical, confining the highest temperature in the rated limit is the most important, for this purpose i apply the principle of annealing algorithm to the optimization of place distribution design. under the unvaried condition of thermal dispersion, we can get the least temperature of the maximum value in some kind of chip array
為了使得電子元件最大溫度負荷在特定散熱狀態下達到最低（低於額定的最高溫度值） ，我們將模擬退火演算法的優化設計思想應用到電子元件陣列的布局優化中，使得在不改變外部散熱條件的情況下，僅僅通過電子元件位置分佈的改變就取得降低其最高工作溫度的效果。 -
Secondly, the following two subjects are discussed according to the calculation of short - circuit current : ( l ) to verify the dynamic stability condition of wires by using simulated annealing algorithm ( sa ), the paper calculates the maximum value of rectangle wires " short - circuit electrodynamic stress and gets the conditions of their having the maximum value. furthermore, some concerned data about the verifying of copper wires are given by analysing vibration spectrum of the electrodynamic stress ; ( 2 ) in order to get the heat withstand conditions of wires, the paper discusses some common calculation methods, and then tries to study the problem applying artificial neural network ( ann ) based on heat principle of metals. the model is shown to be feasible
其次，在電路中短路電流計算的基礎上， （ 1 ）進行母線的短路動穩定校驗計算：採用模擬退火演算法（ sa演算法）計算了矩形母線短路電動力的最大值及其取極值的條件，獲得了更為一般的結果，進而通過短路電動力的頻譜分析，給出了銅質母線的有關短路校驗計算數據； （ 2 ）進行母線的短路熱穩定校驗計算：討論了熱穩定校校的幾種常用計算方法，從導體或電器的發熱機理出發，運用人工神經網路理論對母線的熱穩定問題進行計算，通過算例比較，證明該方法用於熱穩定計算是可行的。 -
Our method is based on non - linear convolution model and uses artificial nervous net algorithm and simulated annealing algorithm, introducing the acoustic impedance as condition of constrained solution to avoid the hypothesis of wavelet or reflection coefficient in common seismic inversion, and adopting the control of fine seismic interpretation model in extrapolation
反演方法以非線性褶積模型為基礎，引入井旁聲阻抗作為解的適定性的約束條件，避開一般地震反演對地震子波及反射系數的假設。反演外推採用精細地震解釋模型控制。演算法上，引用人工神經網路和模擬退火演算法。 -
Annealing the v2o5thin film at 480, under l - 2pa for 20 minutes, the vo2 polycrystalline thin film with the resistivity change larger than 3 orders through the transition temperature was obtained. the transition temperature was influenced by the heating condition in vacuum
實驗證明，選擇合適的成膜熱處理條件和真空烘烤條件是實現sol - gelv _ 2o _ 5結構向vo _ 2結構成功轉換的關鍵。 -
Then a new improving scheme of ga which we call it hgsaa ( hybrid gentic - simulatd annealing algorithm ) is put forward based on the existing condition, and the new algorithm works more efficiently than the old one because it has not only ga ' s global searching capability but also saa ' s local searching capability. the simulatio results show the new algorithm is more effective than ga. the minimum cost is reduced and the clustered network structures have been produced with the onus are evenly distributed or clustered around the obds and the clustered network structures are well ordered with a satisfactory degree of symmetry after the hgsaa has runed 100 generation
吏為重要的是，本文充分利用了混合遺傳演算法的思想，將遺傳演算法和模擬退火演算法的優勢相結合，使得遺傳演算法的全局尋優能力與模擬退火演算法的局部尋優能力在該問題的求解過程中充分發揮了作用，由本文實現的混合遺傳一模擬退火演算法明顯地改進了演算法的效果，由此生成的網路方案的建設費用得到極大減少，同時拓撲結構的優化結果也比單純的遺傳演算法的效果好得多。 -
2. fabricating uniphase fe _ 3o _ 4 film by dc magnetron sputtering, the influence of sputtering power, annealing temperature is discussed in detail and the optimum fabricating condition is found. 3. the influence of ta buffer introduced to fe _ 3o _ 4 film is investigated in detail
2 .研究以磁控反應濺射法制備單相成分的fe _ 3o _ 4薄膜時，濺射功率、晶化溫度對薄膜結構的影響，得到磁控反應濺射制備半金屬fe _ 3o _ 4的最優條件。 -
The effect of annealing condition such as temperature, time and vacuum on microstructure of vo2 films was studies. the crystalline vo2 films can be obtained after annealing at 450 3 hour in 10pa vacuum. the conductivity of films increases linearly with increasing the temperature
對退火溫度和時間以及真空度的影響進行了研究，在低真空（ 10pa ） 450退火3小時后得到的vo _ 2薄膜，晶體顆粒呈長方柱狀，具有良好的結晶性能。 -
The difficulty can be overcomed that the n atom is not easy to be doped into zno. if we control the annealing condition, the residual nitrogen atoms will become acceptors in zno : n films
通過這種方法可以克服n原子不容易慘雜進氧化鋅的困難，並且可以通過控制退火過程來控制n原子< wp = 5 >的摻雜濃度。 -
The best annealing condition of the zno films grown by electron beam evaporation technique was achieved
採用電子束蒸發的方法在si襯底上生長zno薄膜，通過退火實驗，得到了最佳的退火條件。 -
In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties
本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。 -
The results provide guidance for optimizing the h2 - loading technique. 3. the fbg was fabricated and the relation between h2 - loading condition and performances of fbg was discussed ; the effects of annealing on fbg were studied
三、對不同載氫條件的光纖刻入光纖光柵，探討載氫條件與光柵性能的關系，研究退火對光纖光柵性能的影響，所得到的結論對製作光柵提供了依據。 -
The condition of electrolyte preparation, the setup of instrument exporting cv voltage, the influence of co - deposition ir composition, the treatment of ta foil surface and annealing treatment of electrode are studied. the mechanism of ru compound deposition is discussed meantime
討論了電解液配製條件、儀器使用條件、共沉澱銥化物、鉭基體表面處理和電極片退火處理條件對產品性能的影響，並分析了沉積機理。 -
In view of evolutionary computation in artificial intelligence, the author gives a scheme to solve the course scheduling problem using evolutionary simulated annealing algorithm, and discusses variable problems of the scheme such as target function and initial solution, the method to generate neighboring area and new solution, initial " temperature " selection and the formulation to produce new " temperature ", inner cycle number and determinal condition solution, some technical problems in college course arrangement are discussed. the algorithm has carried on the achievements in windows 2000 operating system
作者從人工智慧中進化計算的角度，給出一種使用進化模擬退火演算法求解課表問題的方案，詳細討論了該方案涉及的各種問題，包括目標函數和初解的確定，臨域和新解的產生方法，初始「溫度」的確定和「溫度」更新的方式，內循環次數及演算法終止條件的確定等，對一些具體的技術問題作出相應安排。
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