annealing point 中文意思是什麼
annealing point
解釋
熱處理溫度-
However, te - rich phases and point defects with high concentration were found locally. not only the vapor - solid equilibrium but also the vapor - liquid - solid equilibrium should be considered for the annealing of the crystals with te - rich phases. by analyzing the phase diagrams of cd - te and p - t plot of cd1 - xznxte ( x = 0. 04 ), it was concluded that for the purpose of rem
本文通過仔細分析cd . te二元相圖和cd卜龍znxte （ x = 0 . 04 ）的p一t相圖，認為為了去除富te相，獲得穩定的電學性能，退火時晶片溫度應小於115ok ，氣氛環境的總壓力應小於pcs （對cdte ， pc洶 -
The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface
發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。 -
Standard test method for annealing point and strain point of glass by beam bending
用梁彎曲法測定玻璃的軟化點和應變點的標準試驗方法 -
Glass - viscosity and viscometric fixed points - part 7 : determination of annealing point and strain point by beam bending iso 7884 - 7 : 1987
玻璃.粘度和粘度固定點.第7部分:射線束彎曲法測定退 -
Viscosity and viscometric fixed points of glass - method for the determination of annealing point and strain point by beam bending
玻璃粘度和測定粘度固定點.第7部分:採用射束彎曲法對退火點和應力點的測定方法 -
The calculation determined the main point defect under different cd pressure and the reaction enthalpies and entropies and the equilibrium constants in ( cd, zn ) te according to the quasi - chemical equations written for cdte sublattice. also the recipe of two - zone annealing process for cd0
根據計算結果，確定了不同氣氛條件下cd _ （ 1 - x ） zn _ xte （ x = 0 . 05 ）晶體中佔主要地位的點缺陷和相關偽化學反應式的反應焓、反應熵及平衡常數，給出了兩溫區本徵退火的具體參數。 -
It considers point, line and interfacial defects in the context of structural transformations including annealing, spinodal decomposition, nucleation, growth, and particle coarsening
其中會討論在退火、旋節點分解、成核、成長以及粒子粗粒化等結構轉變之過程中，所涉及的點、線和面的缺陷。 -
In this paper, the research actuality status of zno thin film ’ s structural character, preparation methods and electrical - optical properties is summarized. the effect of sputtering parameters, annealing parameters and doped sb2o3 on the structure, optical absorption and electrical properties of zno thin film is studied by sem, xrd, xps, eds, uv - vis spectrophotometer, hall effect detector, four - point probe electric resistance measurement and direct - current impedance measurement etc. the results of sem, xrd and edx show that zno thin film possesses good processing stability
本文在綜述zno薄膜的結構特性、制備方法和光電性能等現狀的基礎上，採用射頻磁控濺射技術制備了純和sb _ 2o _ 3摻雜的zno薄膜，採用sem 、臺階儀、 xrd 、 xps 、 uv - vis分光光度計分析、電阻儀、阻抗譜儀等儀器設備分別研究了濺射工藝參數、退火工藝參數和sb _ 2o _ 3摻雜對zno薄膜結構特性、光吸收性能和電學特性的影響規律。 -
Test method for annealing point and strain point of glass by fiber elongation
用纖維伸長法測定玻璃的軟化點和應變點的試驗方法 -
Viscosity and viscometric fixed points of glass - part 2 : determination of annealing point and strain point by fiber elongation
玻璃的粘度和測粘固定點.第2部分:通過纖維伸長度測定退火溫度和應變點 -
Determination of annealing point and strain point of glass
玻璃的退火溫度和應變溫度的測定 -
This thesis discusses the cases where the transformations are affine or thin plate spline, and presents two practical point matching algorithms. the main contributions are as follows : firstly, we improve the deterministic - annealing - based point - matching algorithms
本文考慮空間映射是仿射變換或薄板樣條的情形，給出兩種實用的點匹配演算法，具體工作如下： （ 1 ）對基於確定性退火技術的點匹配演算法進行了改進。
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