annealing process 中文意思是什麼
annealing process
解釋
退火過程-
We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900. the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900, suggesting that the film quality can be improved by annealing process
當退火溫度為900時獲得了高質量的氧化鋅薄膜，光致發光譜的半高寬為94mev ，通過變溫實驗得到激子束縛能為59mev ，表明退火過程提高了薄膜的質量。 -
Recrystallization kinetics of the galvanized strip continuous annealing process with acceleration
熱鍍鋅原板變速連續退火再結晶動力學 -
Computer simulation of grain growth in two dimensions in annealing process
退火過程中晶粒生長的二維計算機模擬 -
The one deposited at 300 substrate temperature owns denser crystallites. during the annealing process, with the increasing of annealing temperature, the crystallites become bigger, and crystalline phase begins to transfer. when the annealing temperature gets to 800, tio2 transfers to rutile structure completely
（ 2 ）常溫下制備的tio _ 2薄膜是無定型的， 300濺射薄膜表面有緻密的晶粒，熱處理溫度升高，晶粒變大，晶相開始轉化， 800退火tio _ 2完全轉化為金紅石結構。 -
To find the parameters of preparation and annealing process associated with the best electrochromic properties of these films, following researches and experiments were carried out : to compare the visible light transmittance of the colored state with bleaching state of the electrochromic films which were annealed at different temperatures and for different duration, to count the dynamic optical density change, and to test the i - v relations of these films " electrochromic cycles and their colored / bleaching response time
對經過不同熱處理溫度和不同熱處理持續時間得到的薄膜樣品的著色褪色可見光范圍內透射光譜的比較，計算薄膜動態光密度變化量的大小，測試薄膜著色褪色循環伏-安關系以及薄膜著色褪色響應時間的快慢，尋求到薄膜呈現最佳電致變色性能時所對應的制備參數與熱處理參數。 -
In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient
本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。 -
In this dissertation, nanometer zno thin films on si ( 100 ) substrates were prepared by using thermal evaporation technique following by two - step annealing process : high quality zno thin films and mgxzn1 - xo alloy films have been grown on si ( 100 ) substrates with mgo buffer layers by using thermal evaporation technique following by two - step annealing process
本文介紹了採用電子束蒸發方法在si補底上制備出了高純度的金屬鋅膜，然後通過二次退火得到了具有六角結構的高質量氧化鋅多晶薄膜材料，另外，還採用電子束蒸發mgo薄膜作為緩沖層二次退火金屬鋅膜的方法制備出了高質量氧化鋅多晶薄膜材料和mgzno合金薄膜材料。 -
The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried
採用等溫退火法（或稱「一步法」 ）沉積ceo _ 2 ，即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜，再在與沉積溫度相同的溫度下對薄膜進行退火處理，系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。 -
The accidental quenching, occurring in the sintering process, will make the steel back of a powder alloy brake lining brittle and useless. in this paper, an annealing process has been adopted to regain the plastic property of the steel back while the other properties of cg03 brake linings are still remained
粉末合金剎車片在燒結後有時會意外淬火，造成剎車片鋼背脆化而報廢.採用一種退火工藝，在保持剎車片其它性能的同時，使剎車片鋼背恢復塑性 -
Based on the comparing analysis and character of clustering algorithm the simulated annealing （ sa ） algorithms was applied to the data clustering. simulated annealing （ sa ） algorithms are random search techniques based on physical annealing process, which can prevent the optimizing process into local optimization and get the global optimization
演算法以優化過程的求解與物理退火過程的相似性為基礎，通過接受準則和對下降溫度的控制，能夠有效的克服優化過程陷入局部極小從而獲得全局最優解。 -
Thirdly, integrating bell - type scheduling investigation of domestic and overseas documents, the paper defines optimized scheduling production of bell - type annealing process as the problem of parallel machine scheduling with resource - constrained and multi - step working procedure, whose optimized function of objective function is given also. furthermore, the author constructs bell - type optimized scheduling model by means of the way combing discrete event simulation with algorithm of intelligent optimization
本文在綜合國內外對于罩式爐調度研究的基礎上，將罩式爐退火過程優化排產定義為資源受限多步工序并行機器調度問題，並定義了優化目標評價函數；將面向對象的離散事件建模模擬方法和智能優化方法相結合建立了退火爐優化排產模型。 -
As annealing temperature is 400, the phase of fexsy is greigite ( fe3s4 ) the fexsy particles cover the porous film of tio2. the average size of fexsy particles range from 5000nm to 20nm as the concentration of the starting solution decreasing. after five times of coating - annealing process, fexsy particles form aggregate in size of 10 m
鐵硫化合物顆粒覆蓋在多孔tio _ 2基底上，顆粒尺寸隨著初始溶液濃度減小從幾個微米減小到十幾個納米，隨著塗膜厚度、退火時間增加，鐵硫化合物的形貌按顆粒狀島狀層狀變化。 -
In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased
Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。 -
The proper temperature is felt about from the substrate of p ( 100 ) cz - si, and it is found that the solar cell conversion efficiency has been improved from 8. 85 % to 11. 45 % for the annealing process. suitable processing conditions for cells " fabrication, hydrogen passivation, sinx anti - reflection coating deposited by plasma enhanced chemical deposition ( pecvd ) are also studied
將太陽電池樣品分別用pecvd （ plasmaenhancedchemicalvapordeposition ）做減反射膜，用fg （ forminggas ）燒結，測試電池性能，發現用pecvd處理后電池效率有所提高，用fg燒結后同樣有所改善。 -
Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness
獨特設計的氮氣氛退火及分步退火實驗證明了原注入樣品的缺陷層中氫及氫致缺陷的存在使得在退火過程中加速外界氣氛中的氧擴散進來，並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長，加速了高溫退火中的內部熱氧化過程，從而形成了比傳統相同劑量simoxsoi厚得多的氧化埋層。 -
It can improve the quality of the annealing process and diagnose some failures
該模型對改善玻璃退火窯運行質量，預測玻璃成型性能具有積極的意義。 -
Phase transition takes place in the annealing process
退火會使晶相結構發生變化。 -
The calculation determined the main point defect under different cd pressure and the reaction enthalpies and entropies and the equilibrium constants in ( cd, zn ) te according to the quasi - chemical equations written for cdte sublattice. also the recipe of two - zone annealing process for cd0
根據計算結果，確定了不同氣氛條件下cd _ （ 1 - x ） zn _ xte （ x = 0 . 05 ）晶體中佔主要地位的點缺陷和相關偽化學反應式的反應焓、反應熵及平衡常數，給出了兩溫區本徵退火的具體參數。 -
Output power range 500 - 1000kw with 380v and 50hz capacitor output cabinet combinet combined with the frame. suitable to various staight seam tube annealing process
電容輸出櫃和機架部分有機結合機電一體，適應于各種直縫鋼管的焊縫退火。 -
The voidage of the electrode was improved and the three phases boundary was ameliorated by the thermal annealing process of air electrode, and the performance of catalyst was improved as a result
並通過電極熱處理工藝，明顯提高電極孔隙率、改善三相界面，提高了催化性能。採用穩態極化曲線測試方法研究sr的摻雜對la _ （ 1 - x ） sr _ xmno _ 3催化性能的影響。
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