annealing treatment 中文意思是什麼
annealing treatment
解釋
退火處理-
There are three main operations in the heat treatment of steel: hardening, tempering and annealing.
鋼的熱處理操作主要有三種，即：淬火，回火和退火。 -
The crystallinity of azo thin films became better after annealing treatment
退火處理能使其結晶度提高。 -
Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate
Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。 -
The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed
本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。 -
Ht sub - factory : complete process of annealing, quenching, tempering, quenching and tempering, solution treatment etc
熱處理廠：可完成退火，正火，回火，調質，固溶處理等工藝 -
Zircaloy - 4 sheet, which was cold - worked followed by recrystallization annealing, exhibits longer lcf life in the rolling direction than that in the transverse direction, and the fact that difference in lcf life between both directions becomes larger as the range of plastic strain becomes lower can be attributed to the texture effect, p - solution treatment deteriorates the alloy ' s lcf property because the treatment lowers the average value of alloy ' s schmid factors, and the subsequent annealing - treatment in a - phase range has a impact on the lcf properties, i. e. the subsequent annealing - treatment at 500 ? for 1. 5h results in better property than that at 750 for 1. 5h, which comes mainly from the fact that the alloy annealled at 500 for 1. 5h has lower amount of the precipitate particles than the alloy annealled at 750 for 1. 5h
對于冷加工后經再結晶退火處理的zr - 4合金，軋制方向的低周疲勞壽命比橫向要大。隨著_ p的降低，兩個方向的低周疲勞壽命的差別相應增加，這是由於合金中存在織構的緣故。冷加工后經再結晶退火處理的zr - 4合金在固溶處理后，抗疲勞性能明顯降低，這主要是由於固溶處理降低了合金的schmid因子；固溶處理后在相區的退火對疲勞性能有影響，即500 1 . 5h退火的抗疲勞性能要優於750 1 . 5h退火，這主要與500 1 . 5h退火的合金中沉澱相粒子的數量較少有關。 -
Heat treatment of ferrous materials - methods of heat treatment - part 1 : hardening, austempering, annealing, quenching, tempering of components
鋼鐵材料熱處理.熱處理方法.第1部分:部件的硬化處理 -
Tianjin fengdong heat treatment equipment co., ltd, sino - japanese joint venture, is a specialist firm to produce unicase series multi - purpose complete set, speria series pre - vacuum multi - purpose furnace complete set, uninite gas soft - nitriding furnace complete set, mesh - belt type continuous furnace, pit type bright annealing furnace and pit gas carbonitriding furnace complete set
全套技術，生產滴注式unicase系列密封箱式多用爐成套設備， speria bbh型預抽真空多用爐成套設備，氣體軟氮化爐成套設備，網帶式連續爐，井式光亮退火爐及井式氣體滲碳爐成套設備，並承接各種非標熱處理設備的設計和製造。 -
Dn80 1000 horizontal continuous annealing treatment furnace
水平式連續退火爐 -
Besides, scan rate and cycle period also affect the result ; co - deposition of dualistic oxide is a focus of research, as an element in the same group, ir is selected. deposition rate of composition is decreased by the adding of ir composition, and when the proportion of ir exceeded 50 %, composition procession can be ceased. but cooperation of ir and ru oxide can highly increase the specific capacitance of active material ; annealing treatment under a certain temperature can help to change the hydrate ru composition into mixture state ru oxide, accordingly increase the stabilization of active material
研究表明:電解液的配製過程中，氯化釕濃度、溶液ph值、陳化時間、溶液溫度對電鍍效果均有影響，其中溶液ph值是最主要的影響因素;在儀器的使用條件探索中，理論結合實驗確定了本電鍍液體系循環伏安電勢窗的理想范圍，並發現循環伏安掃描速度和掃描周期對電鍍結果也有較大影響;混合氧化物的共沉澱是目前研究熱點，在此選用與釕同一族的銥作為共沉澱元素，銥的加入會阻礙氧化物的沉積速度，銥的比例超過50 %會使沉積作用停止，但是二元氧化物的協同作用使沉積的活性物質比容量大大提高;一定溫度下退火后處理作用會使水合釕化物轉變成混合價態的氧化釕，從而提高活性物質的穩定性。 -
Phenomenon of strip steel heat buckle in vertical continuous annealing furnace and treatment methods
立式連續退火爐內帶鋼的熱瓢曲現象及處理辦法 -
The properties of lacamno3 films were enhanced dramatically with a post annealing treatment in high temperature and high oxygen pressure. the films show the highest so far tmi, which reaches the 300k, the transition of resistivity is kept in a narrow temperature range and the temperature coefficient of resistance ( tcr ) is about 5 - 8 %
以高溫、高氧壓的條件對薄膜進行後退火處理，薄膜性質得到極大改善，轉變溫度點提高到了300k ，電阻?溫度系數也達到了5 - 8 ，不僅提高了轉變溫度點，而且使轉變保持在一個較窄的溫度區間內。 -
Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige -
Xps showed that there were much chemical absorbing water on the ti _ ( 2 ) film surface which mainly existed in form of - oh, and the contents of - oh was increasing with the annealing temperature. hydrophilic property became better with the annealing temperature ; the essential relation between the changing of contact angle and light - induced - electrons and light - induced - cavities was studied in details. the photocatalysis of samples without heat treatment was very bad, but that of samples after heat treatment was much better
Xps的分析表明：試樣的表面含有大量的化學吸附水，主要以羥基的形式存在，隨著熱處理溫度的升高，吸附羥基的含量在增加；親水性能測試表明：隨著氧氣分壓的變化，其親水性能變化不大，隨著熱處理溫度的增加，試樣的親水性能在變好，並從理論上解釋了親水性能光照前後變化和光生電子?空穴對之間的本質關系。 -
However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0 -
According to structural characteristics of multi - phased alloy steels and the properties of ultrasonic propagation, microstructures characterization with different heat treatment processes ( normalizing, quenching / annealing, quenching plus low tempering, quenching plus high tempering ) for three steels ( 40cr, 38crmoal, gcrlssimn ) was studied experimentally by using ultrasonic methods. ultrasonic velocity, relative attenuation coefficient, and power spectral analyses were researched on the same samples respectively, on the basis of theory and experiment, the sensitivity and other characterizations of the three methods used to distinguish different microstructures were compared
根據具有多種相結構合金鋼不同熱處理轉變產物的組織特點，以及超聲波在其中的傳播規律，利用超聲波速度、相對衰減系數以及功率譜分析三種方法，對三種鋼（ 40cr 、 38crmoal及gcr15simn ）不同熱處理（正火、淬火退火、淬火+低溫回火及淬火+高溫回火）轉變產物的顯微組織進行了超聲表徵研究。 -
Effects of annealing treatment on physical properties of a dental all - ceramic system
退火處理對牙科全瓷冠物性的影響 -
And is applied the annealing treatment to eliminate internal stress. therefore, this machine has very strong rigidity. the slide rail of
本機機體採用fc25以上之鑄鐵造而成，並經退火內應力消除處理，剛性特強， -
The condition of electrolyte preparation, the setup of instrument exporting cv voltage, the influence of co - deposition ir composition, the treatment of ta foil surface and annealing treatment of electrode are studied. the mechanism of ru compound deposition is discussed meantime
討論了電解液配製條件、儀器使用條件、共沉澱銥化物、鉭基體表面處理和電極片退火處理條件對產品性能的影響，並分析了沉積機理。 -
The contact angle with water is 64 ? for the thin film without annealing. after 650 ? annealing treatment, the contact angle becomes 0. with proper sno2 doping, the hydrophilicity of tio2thin film will be also improved
（ 3 ）沒有經過熱處理的tio _ 2薄膜與表面水滴的接觸角為64 ，經過650熱處理后薄膜與水滴的接觸角為0 ，摻雜sno _ 2對tio _ 2薄膜的親水性有所改善。
分享友人