arc etching 中文意思是什麼
arc etching
解釋
電弧刻蝕-
As the isotropic etching being related to the resistivity of the si material and combining the practical need of the solar cell production, the paper emphasis on the etching of the multicrystal si with resistivity of about 1. cm. the results : ( 1 ) reflectance characteristics the appropriate etching solutions has led to a reduction of the total integrated reflectance to 5. 7 %, which is quite comparable with conventionally pretextured si surface covered by a double layer arc
由於以hf + hno _ 3 + h _ 2o為溶液各向同性腐蝕與矽片的摻雜濃度有關，結合生產太陽電池的實際需要，本文重點研究了電阻率1 . cm左右的多晶硅的腐蝕情況，結果如下： （ 1 ）反射特性在適當的hf + hno _ 3 + h _ 2o溶液中制備的多晶硅電池的絨面，其反射率降到了5 . 7 。 -
1 ) in the solutions with high hno3 concentration, the etching is similar to chemical polishing which produces flat surface. 9. 3 % surface reflectance is obtained through stopping etching when the blue color is appearing on the surface, which is lower than 15. 7 % reflectance of sio2 layer arc
這對于提高太陽電池的效率是極有益的。 （ 2 ）反射特性、形貌和腐蝕液的關系1 ）在高hno _ 3的溶液中，近似化學拋光，制備的樣品表面相對光滑。 -
And the reflectance in the short wavelength range is lower than that of a double layer arc, which is beneficial for improving the solar cell efficiency. ( 2 ) reflectance characteristics and morphology, the etching solutions
可以和具有tio _ 2 - mgf _ 2雙層減反射膜的常規堿腐蝕的結果相比擬，且在能量較高的短波范圍內具有更好的減反射特性。
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