arsenide 中文意思是什麼

arsenide 解釋
n. 名詞 砷化物。

  1. Investigation of a case of hydrogen arsenide poisoning

    一起砷化氫中毒事故的調查
  2. Acute hydrogen arsenide poisoning - analysis of 17 cases

    急性砷化氫中毒17例病例分析
  3. Test method for ga as ratio of surface of gallium arsenide

    砷化鎵表面鎵砷比的測試方法
  4. Boat - grown gallium arsenide single crystals and as - cut slices

    水平法砷化鎵單晶及切割片
  5. Test method for thermal stability testing of gallium arsenide wafers

    砷化鎵晶片熱穩定性的試驗方法
  6. Gallium arsenide single crystal - determination of dislocation density

    砷化鎵單晶位錯密度的測量方法
  7. Four patients with hydrogen arsenide poisoning in indium replacement workers

    銦置換工砷化氫中毒四例
  8. Gallium aluminum arsenide gaaias or aigaas

    砷鋁化鎵
  9. Gallium arsenide injection laser

    砷化鎵注入雷射
  10. Meaning you could take a simple aluminum gallium arsenide laser and -

    也就是說，只要拿一個簡單的砷化鋁鎵激光器和
  11. Aluminium gallium arsenide, algaas

    砷化鎵鋁
  12. Meaning you could take a simple aluminum gallium arsenide laser and - -

    也就是說，只要拿一個簡單的砷化鋁鎵激光器和. .
  13. Measuring thickness of epitaxial layers of gallium arsenide by infrared interference

    砷化鎵外延層厚度紅外干涉測量方法
  14. Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices

    液封直拉法砷化鎵單晶及切割片
  15. Many sulphides, selenides, and tellurides have the nickel arsenide's nias type of structure.

    許多硫化物，硒化物和碲化物具有砷化鎳NiAs型的結構。
  16. Many sulphides, selenides, and telluides have the nickel arsenide, nias, type of structure.

    許多硫化物、硒化物和碲化物具有砷化NiAs型的結構。
  17. Test method for sub - surface damege of gallium arsenide polished wafer by x - ray double crystal diffraction

    砷化鎵拋光片亞損傷層的x射線雙晶衍射試驗方法
  18. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
  19. Testing of materials for semiconductor technology - determination of dislocations in monocrystals of iii - v - compound semi - conductors - part 1 : gallium arsenide

    半導體工藝材料的檢驗. -化合物單晶體錯位的測定
  20. Hygienic determination method of arsenide in air of residential areas - silver dithyldithiocarbamate spectrophotometric method

    居住區大氣中砷化物衛生標準檢驗方法二乙氨基二硫代甲酸銀分光光度法
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