atomic diffraction 中文意思是什麼

atomic diffraction 解釋
原子衍射
  1. Treatment of the spinel limn2o4 with aqueous acid produces - mno2. x - ray diffraction and atomic absorption spectroscopy show that - mno2 with lattice constant of 0. 806nm preserves the structural framework of the limn2o4 and the conversion of limn2o4 to - mno2 results in some contraction of the lattice

    利用limn2o4與稀酸作用制得- mno2 ,經xrd 、原子吸收光譜( aas )分析表明- mno2仍然保持了尖晶石的面心立方點陣,晶胞參數0 . 806nm ; limn2o4經過酸處理、鋰離子脫出后晶胞體積發生了收縮。
  2. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外,本文通過反射式高能電子衍射( rheed )監測了gasb外延薄膜的生長,利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態,溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析,並與模擬結果進行比較。
  3. Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol

    Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明,所得cdse納米線為六方晶型,晶體的( 001 )晶面沿平行於基底的方向擇優生長,且隨沉積溫度的降低,這種擇優生長的趨勢越來越強;納米線晶體在生長時,由於受aao模板孔徑的限制,形成c軸方向拉長的晶粒,其長徑比達5 1以上;晶體的大小和完善程度隨沉積溫度的降低而增大, 185沉積得到多晶六方cdse納米線,而140沉積時可得到六方cdse單晶納米線。
  4. The surface morphologies of thin films were observed by using scan electron microscope ( sem ) and atomic force microscope ( afm ). based on grazing incidence x - ray diffraction ( gixrd ) equipment, we find that residual stress exist in magnetron sputtering plct film, in addition, the ferroelectric properties of plct thin films were measured by radiant premier lc type multifunctional ferroelectric properties test system

    利用廣角x射線衍射技術對不同濺射工藝下plct薄膜的相結構進行了研究;採用掃描電子顯微鏡( sem )和原子力顯微鏡( afm )分別觀察了薄膜的表面形貌;利用掠入射x射線衍射( gixrd )測量了薄膜的殘余應力。
  5. The phase structure of different cu - fe thin films were studied by using grazing incidence x - ray analysis ( gixa ). the texture and residual stress of different cu - fe thin films were measured by scan of x - ray diffraction ( xrd ) and 2 scan with different. the thicknesses of different thin films were characterized by means of small angle x - ray scattering ( saxs ) technique. by using atomic force microscope ( afm ) measured surface roughness of thin films. the component of different thin film was characterized by energy disperse spectrum ( eds ) and x - ray fluorescence ( xrf ). the magnetic properties of cu - fe thin films were measured by means of vibrating sample magnetometer ( vsm ). in addition, the giant magnetoresistance ( gmr ) effects of different films were also measured. the original resistance of the film fabricated by a direction - current magnetron sputtering system is directly affected by bias voltage

    利用掠入射x射線分析( gixa )技術對不同cu - fe薄膜的相結構進行了研究;利用xrd掃描及不同角度的2掃描對薄膜進行了結晶織構及殘余應力分析;運用小角x射線散射( saxs )技術測量了薄膜的厚度;採用原子力顯微鏡( afm )觀察了薄膜的表面形貌;運用能量損失譜( eds )及x射線熒光光譜( xrf )對薄膜進行了成分標定;使用振動樣品磁強計測量了不同cu - fe過飽和固溶體薄膜的磁性能;最後利用自製的磁阻性能測試設備測量了真空磁場熱處理前後不同薄膜的巨磁阻值。
  6. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制,以控制沉積過程,減少金剛石膜生長過程中的缺陷,並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程;利用微波對材料的選擇加熱特性,通過構造等效方程,並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中,建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型,為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備,並對基片加熱材料進行了設計和優選,以獲取大面積均勻的溫度場區,甚至獲得大於基片臺尺寸的均勻溫度區;作為研究重點之一,開展了微波等離體化學氣相沉積金剛石的成核與生長研究,系統地研究了在( 100 )單晶硅基片上mpcvd沉積金剛石膜的實驗過程中,基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響,分別用raman光譜、 x射線衍射( xrd ) 、掃描電鏡( sem ) 、紅外透射光譜( ir ) 、原子力顯微鏡( afm )對薄膜進行了表徵,確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  7. In this paper, transparent conducting zno thin films doped with al have been prepared by sol ? gel method, which were characterized by x - ray diffraction, atomic force microscopy and ultra - violet spectrometer

    因此, zno : al薄膜逐漸成為ito薄膜的最佳替代材料,被廣泛的應用於光電顯示、太陽能電池和熱鏡等領域中。
  8. The resulting antimony doped tin dioxide thin film has good optical and electrical properties. the mechanism of the film formation in spray pyrolysis method was also discussed. the films were characterized by x - ray diffraction, scanning electron microscopy, atomic force microscopy, ultraviolet and visible transmittance spectroscopy x - ray photoelectron spectroscopy and so on

    在經過深入的文獻查閱和前期研究工作基礎上,本文提出以無機金屬鹽sncl _ 2 ? 2h _ 2o和sbcl _ 3為原料,採用噴霧熱分解法制備得到光學、電學性能優良的摻sb的sno _ 2薄膜,並深入探討了噴霧熱分解法的成膜機理。
  9. It showed that the polybenzoxazine precursor had intercalated into vermiculite layers. cured the composites, the diffraction peak of vermiculite d001 in xrd spectrum disappeared. according to atomic force microscopy ( afm ) images, in the cured - composites, when the content of vermiculite minerals was less of 3 %, most crystals were cleave d into the " exfoliated " shape in which crystal gallery breadth was about of 113nm

    Dfm分析表明:在蛭石含量低於3時,形成主要以剝離狀納米分散為主的固化結構,相鄰蛭石晶片間距可達到113nm ,隨著蛭石含量的增多,逐漸形成以插層狀納米分散為主的固化結構,相鄰蛭石晶片間距在40nm左右。
  10. Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer. the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ), scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )

    本文採用分子束外延( mbe )方法在gaas ( 001 )襯底上優化低溫緩沖層生長條件制備了異質外延insb薄膜,採用原子力顯微鏡( afm ) 、掃描電鏡( sem )與x射線雙晶衍射( dcxrd )等方法研究了insb / gaas薄膜的表面形貌與結晶質量。
  11. The samples were characterized by x - ray diffraction ( xrd ), optical spectroscopy, transmission electron microscopy ( tem ) and scanning tunneling microscopy ( stm ). as a result, a self - assembled monolayer ( sam ) of msa on the surface of fee au particles was directly observed in atomic level

    在此基礎上,對金納米粒子和其自組織結晶體進行了一系列的x射線衍射儀( xrd ) 、透射式電子顯微鏡( tem ) 、光吸收譜和掃描隧道顯微鏡( stm )的檢測和分析。
  12. At present, local morphology was used to discriminate ferroelectric phase area and non - ferroelectric phase area, but once morphology variation of phase transformation was tiny, the ferroelectric phase area and non - ferroelectric phase area was hard to discriminate only from morphology view. however, the introduction of sndm can overcome this limitation, and visualize the investigation of annealing process. combining x - ray diffraction, atomic force microscopy ( afm ) with sndm, the phase transformation process of pzt thin films with different annealing time and of plt films with different annealing temperature were studied, respectively

    結合原子力顯微鏡( afm ) 、 sndm 、 x射線衍射( xrd ) ,通過對微區形貌、電容分佈變化和鐵電薄膜結晶情況的表徵和分析,研究了pzt鐵電薄膜和plt鐵電薄膜的晶化過程,分析了不同退火時間對pzt鐵電薄膜微結構,不同退火溫度對plt薄膜的微結構和微區極化分佈的影響,有效克服僅依據形貌特徵判定鐵電相與非鐵電相的局限性,實現鐵電薄膜微區晶化過程的可視化分析,豐富了晶化過程的研究方法。
  13. In the present dissertation, nanocomposite thin films and extended molecular devices were prepared via the electrostatic self - assembly monolayer technique. the structures and the properties of the thin films were studied by uv - vis spectroscopy, x - ray diffraction spectroscopy, x - ray photoelectron spectroscopy, laser raman spectroscopy, atomic force microscopy, fiber optic experimental setups and so on. a novel fiber optic humidity sensor based on the self - assembled polyelectrolyte multilayer thin films was presented, and other thin film devices were also described

    在對納米復合薄膜研究的重要性及自組裝薄膜技術的發展動態進行綜合分析的基礎上,開展了利用靜電吸附自組裝技術制備納米復合薄膜及廣義的分子器件的研究,採用紫外-可見光光譜儀、 x射線衍射儀、 x射線光電子能譜儀、激光拉曼光譜儀、原子力顯微鏡、光纖光學系統等研究了復合薄膜的結構與性能,研製了一種光纖濕度傳感器和其他薄膜器件。
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