atomic ion 中文意思是什麼

atomic ion 解釋
電離的原子
  • atomic : adj. 1. 原子的。2. 極微的。3. 強大的。
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  1. The angular distribution of parent molecule ion is highly isotropic while that of the atomic ion is anisotropic

    母體離子的角分佈呈現了高度的各向同性，而原子離子則呈現了高度的各向升性分佈。
  2. In the obtained mass spectra of molecules, the peak splitting of atomic ions is a hallmark of coulomb explosion process indicating ther coming from the dissociation of highly charged parent molecule ion

    在飛行時間循譜中，原子離子的譜峰分裂標志著這些原子離子來源於高價母體離子的庫侖爆炸。
  3. Surface states and the topmost surface atoms of the batio3 thin films have been analyzed by x - ray photoelectron spectroscopy ( xps ) and angle - resolved x - ray photoelectron spectroscopy ( arxps ). the results show that the as - grown batio3 thin films have an enriched - bao nonstoichiometric surface layer which can be removed by ar + ion sputtering, and the atomic ratio of ba to ti decreases with increasing the depth of ar + ion sputtering

    用x射線光電子能譜技術（ xps ）和角分辨x射線光電子能譜技術（ arxps ）研究了薄膜的表面化學態以及最頂層原子種類和分佈狀況，結果顯示在熱處理過程中薄膜表面形成一層富含bao的非計量鈦氧化物層，並且鋇-鈦原子濃度比隨著探測深度的增大而逐漸減小。
  4. The main equipment of the ion electrostatic accelerator is in good condition. if it is used again it will be the important implement of science research about atomic nucleus physics, biology aberrance and material denaturalization

    它的主要設備情況良好，一旦恢復使用，將成為原子核物理，生物誘變，材料改性等科研工作的重要工具。
  5. The control of beam halo - chaos becomes a critical problem in the development of high intensity accelerator. efforts to remove the halo by collimation have been largely unsuccessful since the halos almost always regenerate. the mechanisms of halos are complex, such as nonlinear resonances and chaotic behavior etc. considering this, professor fang jin - qing who works in china institute of atomic energy pointed out that the theory of chaos control can be used to control beam halos. he presented the method to control halos by using nonlinear functions, which means nonlinear function g is added to the right of ion radial self - edlctric force equation and some nonlinear function are selected to control beam halos in simulations. in paper [ 69 ], controllerg = - 0. 15sin ( rmax - am ) 2 was used and the halo intensity was decreased to 0. 1078, the halos are removed partly

    束暈?混沌的控制是新一代強流加速器研製的關鍵問題，隨著強流離子束應用前景的日趨廣闊而日益成為研究的熱點。傳統機械限束器因無法解決束暈的再生而收效甚微，因為束暈的形成有著其內在動力學機制?非線性共振以及混沌等。基於此，中國原子能科學院研究員方錦清將混沌控制的理論和方法開創性的運用於束暈?混沌的控制上，提出了控制束暈?混沌的非線性控制策略，即在粒子徑向所受束自生場力方程的右邊加上非線性控制函數g ：並選取一些非線性函數如等進行了控制的模擬研究，將束暈強度控制在0 . 1078左右，取得了初步的控制效果。
  6. To improve the level of automation in accelerator control of china institute of atomic energy, an advanced network control system about low - energy high ion - current device was designed and realized

    摘要為了提高中國原子能科學研究院串列加速器控制的自動化水平，設計並實現了一種先進的低能強流離子束網路控制系統。
  7. Methods for chemical analysis of bismuth - determination of arsenic content - ion exchange separation - hydride generation - flame atomic absorption spectrophtometric method

    鉍化學分析方法離子交換分離-氫化物發生-火焰原子吸收光譜法測定砷量
  8. The subjects under research include high - performance rubidium atomic frequency standard, microwave and optical trapped ion frequency standard and cold atom frequency standard, etc. the lab

    目前正在開展的研究課題有高性能銣頻標、離子阱微波頻標和光頻標、冷原子頻標等。
  9. The room for the following equipments need the air - conditioning : uv - spectrophotometer, fluorescence spectrometer, gc, gc - ms, aas, afs, icp, icp - ms, hplc, hplc - ms, ion chromatography, atomic fluores - cence spectrometer, pcr amplification and balance

    12紫外/可見分光光度儀、熒光分光光度，氣相色譜，氣相色譜質譜、原子吸收，原子熒光儀、等離子發射光譜、等離子質譜、高效液相、液相色譜質譜、離子色譜、熒光光度、 pcr核酸擴增儀以及天平室安裝空調。
  10. The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )

    我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。
  11. ( 3 ) chapter v. plasma characteristics of rf ion source is investigated. a zero - dimensional numerical dynamic colisional radiative atomic and molecular ( cram ) model is suggested to simulate the microphysical process. all species " population number densities in plasma are calculated in non - thermodynamics equilibrium condition, and proton content in extracted ion current are measured with 60 ? magnetic analyzer

    （ 3 ）提出了高頻離子源等離子體的零維cram模型（ collisionalradiativeatomicandmolecularmodel ） ，計算了非平衡態（ nte ）下等離子體中分子、電子、離子、基態原子、激發態原子等粒子濃度，並在zf - 200kev中子發生器上，用60磁分析器實驗測定了引出束流的質子比。
  12. Surface chemical analysis - secondary ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質譜法.利用均勻摻雜材料測定硅中硼原子濃度
  13. Plasma characteristics of a rf ion source are investigated by emission spectroscopy. the spatiotemporal spectral line intensities of the first three atomic lines in hydrogen bahner series ( = 656. 28, 486. 13, 434. 05nm ) of rf ion source plasma, are measured with calibrated optical multichannel analyzer ( oma ). some plasma parameters, including electron temperature, hydrogen atom density and hydrogen ion density, are calculated and analyzed using partial local thermodynamic equilibrium ( plte ) theory and abel transform

    實驗採用絕對定標后的光學多道分析系統（ oma ）測定了離子源等離子體不同時間和空間位置的氫原子巴耳末譜線系中前三條譜線（ = 656 . 28 ， 486 . 13 ， 434 . 05nm ）的強度，並採用plte的理論和abel變換方法，計算出了高頻離子源等離子體的電子溫度、氫原子濃度、氫離子濃度等參數在放電的不同階段和徑向分佈情況，並進行了簡要分析。
  14. Recent progress in ultrafast optics has allowed the generation of ulfcraintense light pulses comprising merely a few field oscillation cycles. the arising intensity gradient allows electrons to survive in their bound atomic state up to external field strengths many times higher than the binding coulomb field and gives rise to ion - ization rates comparable to the light frequency resulting in a significant extension of the frontiers of nonlinear optics and ( nonrelativistic ) high field physics

    隨著超快光學技術的發展，僅含幾個振蕩周期的超強脈沖已經能產生，且其強度梯度可使電子存在比庫侖束縛場高許多倍的外場產生的原子束縛態上，並產生了同光頻相差不大的電離率，從而促進了非線性光學前沿及非相對論的強場物理的延伸。
  15. Icp aes standard test method for determination of impurities in plutonium : acid dissolution, ion exchange matrix separation, and inductively coupled plasma - atomic emission spectroscopic icp aes analysis

    測定鈈中雜質的標準試驗方法:酸溶解離子交換矩陣分離和感應耦合等離子體-原子發射光譜法
  16. We give some useful analyses and the computer simulations for the ion etching process. compared with the atomic force microscope ( afm ) scanning photograph of the etching surface, the theoretical results prove that these simulation analyses assure the precision required by this problem, so these mathematical models are reasonable and correct. the analysis method in this paper is useful to analyze etching process, and it can also afford some valuable reference to etching technology

    在本論文我們主要利用這個數學模型，對使用離子束刻蝕製作單臺階光柵的臺階與溝槽部分的表面面形隨時間的演變過程分別進行了計算機模擬分析，並通過把理論結果與在實驗中得到的刻蝕表面在原子力顯微鏡（ afm ）下拍攝的照片進行比較，結果說明這種模擬分析能夠保證對該問題分析所要求的精度，從而也證明了理論模型的合理性和正確性。
  17. Surface chemical analysis - secondary - ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質光譜測定法.採用均勻塗料的硅中硼原子濃度測定
  18. Chemical analysis methods for mixed rare earth oxide of ion - absorpted type re ore - determination of fifteen reo relative content - inductively coupled plasma atomic emission spectrographic method

    離子型稀土礦混合稀土氧化物化學分析方法電感耦合等離子體發射光譜法測定十五個稀土元素氧化物的配分量
  19. Chemical analysis methods for mixed rare earth oxide of ion - absorpted type re ore - determination of aluminum oxide content - atomic emission spectrographic method

    離子型稀土礦混合稀土氧化物化學分析方法發射光譜法測定三氧化二鋁量
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