atomic layer 中文意思是什麼

atomic layer 解釋
原子層
  • atomic : adj. 1. 原子的。2. 極微的。3. 強大的。
  • layer : n 1 放置者，鋪設者，計劃者。2 【賽馬】（一般）賭客。3 產卵的雞。4 【軍事】瞄準手。5 層；階層；地...
  1. The organic layer in the neck of the flask is aspirated into the atomic absorption burner.

    滿至燒瓶頸部的有機層被抽吸進入原子吸收燃燒器中。
  2. This paper discusses the characteristic of inductivity coupled plasm atomic excite spectroscope and applies the analysis method to measure the atmosphere corrosion rusty layer samples from qingdao and chengdu. we get the relative content of each element of rusty layer and show the charitable situation that the relative content varied with the change of corroded environment and time

    概述了電感耦合等離子體光譜法的特點，並運用該光譜法對青島和成都兩地的大氣腐蝕銹層樣品進行了比較測試，得出了銹層中各元素的相對含量及其隨腐蝕環境和時間的變化情況
  3. The surface elemental analysis shows that al / o atomic ratio change from about 2 / 3 of not wetted part to about 1 / 1 of wetted part. the damage of coating surface seems to be related to the interaction of outside layer with liquid pb - 17li and thermal stress during heating sample

    未浸潤表面的ai / o原子比約為2 / 3 ，浸潤表面約為1 / 1 ，表明液態鉛鋰合金對滲鋁層表面的al2o3薄層造成了損傷。
  4. Surface states and the topmost surface atoms of the batio3 thin films have been analyzed by x - ray photoelectron spectroscopy ( xps ) and angle - resolved x - ray photoelectron spectroscopy ( arxps ). the results show that the as - grown batio3 thin films have an enriched - bao nonstoichiometric surface layer which can be removed by ar + ion sputtering, and the atomic ratio of ba to ti decreases with increasing the depth of ar + ion sputtering

    用x射線光電子能譜技術（ xps ）和角分辨x射線光電子能譜技術（ arxps ）研究了薄膜的表面化學態以及最頂層原子種類和分佈狀況，結果顯示在熱處理過程中薄膜表面形成一層富含bao的非計量鈦氧化物層，並且鋇-鈦原子濃度比隨著探測深度的增大而逐漸減小。
  5. When porous stainless steel is taken as the support, the hydrogen embrittlement can be overcome, the membrane thickness can be reduced and atomic interdiffusions of metals between the pd - ag layer and stainless steel can be prevented by using different techniques

    將多孔不?鋼作為載體時，利用不同的技術能克服氫的脆化作用，減少鈀膜厚度以及防止鈀銀層與不?鋼間金屬原子的相互擴散。
  6. The physical properties including the atomic positions, the layer atomic density and the layer structure factor were calculated to disclose the relations between their microstructures and temperature

    通過計算不同溫度的原子位置、層原子密度、層結構因子、徑向分佈函數等物理量，研究（ 001 ）面的微觀結構隨溫度的變化。
  7. The images of the single crystals with different ge concentration were gotten by means of afm method. the atomic layer patterns of different crystals were gotten

    利用原子力顯微鏡（ afm ）對不同鍺濃度的硅鍺單晶的形貌進行了觀察，得到了不同單晶的原子層形貌。
  8. Atomic layer deposition ( ald ) has attracted a lot of attention recently for its excellent deposition abilities, such as almost 100 % step coverage, accurate thickness control, large area uniformity, excellent process stability, and low processing temperatures

    摘要最近原子層沉積（ ald ）吸引著許多的注意，原因在於它傑出的沉積技術能力，例如幾乎100 %的階梯覆蓋、精準的薄膜厚度控制、大面積薄膜的均勻性、優異的製程穩定度與低溫的製程。
  9. Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer. the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ), scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )

    本文採用分子束外延（ mbe ）方法在gaas （ 001 ）襯底上優化低溫緩沖層生長條件制備了異質外延insb薄膜，採用原子力顯微鏡（ afm ） 、掃描電鏡（ sem ）與x射線雙晶衍射（ dcxrd ）等方法研究了insb / gaas薄膜的表面形貌與結晶質量。
  10. Development in atomic layer deposition and its applications

    原子層沉積技術及應用發展概況
  11. Electrochemical atomic layer epitaxy and research progress of its application in preparation of new materials

    電化學原子層外延及其新材料制備應用研究進展
  12. The atomic layer, highlighted in yellow, enables the development of a unified grid infrastructure

    Atomic層以黃色表示，它可以用來開發統一的網格基礎設施。
  13. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
  14. Further more, atomic force microscopy ( afm ) results showed no noticeable difference in grain size. it ' s concluded that magnetic treatments results in oriented stacking of vopc molecules. this change in crystal structure leads to an improvement in photoconductivity behavior : a photoreceptor used pbpc as the charge generation layer had a much shorter decay time

    我們分別制備了氧化鋅（ zno ）酞菁鉛（ pbpc ）和氧化錫（ sno ）酞菁鉛（ pbpc ）多層異質復合薄膜，對兩種結構的復合薄膜進行了紫外-可見吸收光譜測試（ uv - vis ）和x射線衍射分析（ xrd ） 。
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