band gap 中文意思是什麼

band gap 解釋
能帶間隙
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  • gap : n 1 （墻壁、籬笆等的）裂口，裂縫；豁口，缺口。 【軍事】突破口。2 （意見的）齟齬，分歧；隔閡，距離...
  1. Cubic boron nitride ( cbn ) is a synthesized wide - band - gap iii - v compound semiconductor and has lots of excellent physical and chemical properties. it has been attracted a nice bit of attention for years because of its application in mechanics, calorifics, optics and electronics

    立方氮化硼（ cbn ）是一種人工合成的寬帶隙-族化合物半導體材料，它有許多優異的物理化學性質，在力學、熱學、光學、電子學等方面有著非常誘人的應用前景，多年來一直吸引著國內外眾多研究者的興趣。
  2. In the sub block circuit design, the contents that the author had introduced include : the principle of band gap voltage reference and the design technique in low power supply ; the analysis of spike pulse noise rejection, frequency divider and dead time in oscillator and control circuit ; the selection of the width and length ratio of four switches and 2x / 1x mode change point in driver and mode selection circuits

    在子電路設計中，作者比較深入分析的內容有:基準電路的原理及低電源電壓下基準電路的設計;振蕩器和控制電路中尖峰脈沖噪聲抑制、兩分頻電路及死區時間設定;驅動及模式選擇電路中開關管的寬長比的選擇及模式轉換點的設計。
  3. Negative group velocity in the band gap range

    禁帶區域內負的群速度
  4. The basis topologies for the band - gap, buried zener, and xfet references are shown in figures 1, 2, and 3, respectively

    關于帶隙基準、掩埋齊納二極體和xfet基準的基本拓撲如圖1 、 2和3所示。
  5. Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors

    現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。
  6. Spontaneous emission can be totally suppressed or strongly enhanced depending on the relative position of the resonant frequency from the edge of the photonic band gap and the photonic mode density. several novel phenomena can be obtained. the spontaneous emission displays an oscillatory behavior, classical light localization, photon - atom bound state, nonzero steady - state population and anomalously large vacuum rabi splitting. and localized mode associated with a defect site in an otherwise perfect photonic crystals, acts as a high - q micro - cavity

    通過原子上能級與光子頻率帶隙邊緣的相對位置或者光子態密度，可以抑制或增強原子的自發輻射。分析並得到了一些奇異的現象，如自發輻射的諧振子行為、光的局域、單光子?原子局域態、上能級中存在非零穩態原子布居數、類似於真空中的拉比頻率分裂等。
  7. Silicon ( si ) is the leading material of microelectronic devices, but the nature of indirect band gap of si hinders its applications in integrated optoelectronics. to develop si - based optoelectronic integration by coupling the mature technology of si microelectronic integration with si - based light - emitting material will essentially meet the increasing demand of the great progress in the information technology

    硅是微電子器件的主要材料，但硅的間接能隙特性嚴重製約了其在光電子領域的應用，如果能在硅基材料的基礎上制備發光材料，就可利用已有成熟的硅集成技術發展硅光電子集成，從而有可能完全改變信息技術的面貌。
  8. Aln is an important compound semiconductor material with wide band - gap, which has wurtzite structure too. because of their many excellent physical properties, aln thin films were applied in blue - uv emitting materials, epitaxy buffer layer, soi material and saw device with ghz band

    Aln具有許多優異的物理性能，在藍光、紫外發光材料及熱釋電材料、外延過渡層、 soi材料的絕緣埋層和ghz級聲表面波器件等方面有著重要的應用。
  9. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  10. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  11. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  12. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  13. This direct band - gap material has a large exciton binding energy ( 60mev ), which permits excitonic recombination even at room temperature. thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions

    它有較高的激子束縛能（常溫下為60mev ） ，使得其在室溫下可以發射紫外激光，因此作為新一代的半導體發光材料受到廣泛關注。
  14. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  15. Al - doped zno thin films are emerging as an alternative potential candidate for ito flims recently. al doped zno thin films also can obtain a tunable band gap. especially, zno : al thin films with high c - axis orientated crystalline structure along ( 002 ) plane are potential device applications in broadband ultra - violet

    Al摻雜的zno薄膜不僅具有與傳統ito薄膜相比擬的光電性質，而且原材料豐富、價格低、無毒、沉積溫度低、熱穩定性高，在氫等離子體環境中具有很高的化學穩定性，不易導致太陽能電池材料活性降低。
  16. Such control can be realized in case where a atom interact with photonic band gap matericals when the atom is placed in photonic crystals whose density of modes is dramatically different from that of free space vacuum. it was known that control could be achieved by varying the frequency ( which leads to the changes of the relative position of the upper levels from the forbidden gap ) or by varying the photonic density of modes ( dos ) or by varying the intial atomic state

    由於光子晶體具有不同於真空中的光子態密度，原子和光子帶隙材料便發生相互作用，這樣便可以控制原子的自發輻射。改變原子上能級與光子禁帶邊緣的相對位置、材料中的光子態密度或原子初態都可以控制原子的自發輻射。
  17. High gain circular waveguide antenna using 1 - d electromagnetic band - gap structure

    結構的圓波導高增益天線
  18. When x is above 1. 3 %, the emission spectra are strongly broadened and do not show any well - defined features, and their peak positions shift to lower energies correspondingly with increasing x. the large band - gap bowing of gap1 - xnx alloy is induced by the impurity band formation due to the intercenter interaction

    對中心發光的nn3束縛激子的零聲子線及其聲子伴線，並得到了nn3的所有聲子伴線（ l0 、 la 、 ta ）的s因子在約20k卜50k范圍內與溫度的關系。
  19. Auto - balanced heel band gap : balanced gap with wipers, shaping perfect lasting results on the heel

    自動平衡束緊器間距- - -自動平衡與掃刀間距，后幫結幫效果平整扎實。
  20. The system exhibits fast response for the load current disturbance and the system always operates at discontinuous conduction current mode so that no slope compensation is required and high efficiency will be achieved when driving 4 leds. the design and analysis of sub - block circuits are provide in the thesis where band gap reference, oscillator, current sensing and over current protection, led load current

    本文完成了各個單元電路的分析與設計，著重分析了帶隙基準源、振蕩器、采樣和過流保護、負載led電流控制和開負載保護五個子電路，對其餘子電路也作了簡要分析。
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