band-gap energy 中文意思是什麼
band-gap energy
解釋
帶隙能-
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors
現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。 -
Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev
Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。 -
Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev
= zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。 -
Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature
氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。 -
This direct band - gap material has a large exciton binding energy ( 60mev ), which permits excitonic recombination even at room temperature. thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions
它有較高的激子束縛能（常溫下為60mev ） ，使得其在室溫下可以發射紫外激光，因此作為新一代的半導體發光材料受到廣泛關注。 -
Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance
室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。 -
Optical absorption measurements show that mnxcd1 - xin2te4 is a direct energy gap semiconductor and the band gap shifts towards the high energy side with the increase of x
採用光吸收法測得mn人d n 。 te 。晶體屬于直接帶隙半導體，其能隙eg隨著組分互的增加線性增大。 -
Zinc oxide ( zno ) is an interesting wide band gap ( 3. 3 ev ) semiconductor material with a binding energy of 60 mev
氧化鋅是一種重要的寬禁帶隙（ 3 . 3ev ）半導體材料，它的激子束縛能高達60mev 。 -
Fes _ 2 ( pyrite ) has been considered as a valuable semiconductor for solar energy conversion and other photoelectrochemical applications since it consists of nontoxic and abundant elements. because of the band gap of about 0. 95ev and the very high light absorption coefficient ( < 700nm 時 ， > 5 10 ~ 5cm ~ - 1 ), it might be suitable for sensitization solar cells and in the form of ultrathin films
Fes _ 2 （ pyrite ）是一種具有合適禁帶寬度（ e _ g 0 . 95ev ）和較高光吸收系數（ < 700nm時， > 5 10 ~ 5cm ~ - 1 ）的半導體材料，其組元元素儲量十分豐富、無毒，而且在制備太陽能電池時可以以薄膜形式使用，成本較低，與已有半導體材料相比，是一種較有研究價值的太陽能電池材料。 -
We also have analyzed the photoluminescence ( pl ) spectra of some zno films, it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap, and the pl peaks move to smaller wavelength because zn are substituted by fe, co, and cu, which cause the size of the film grains smaller and the effective band - gap bigger. the red emission of zno films is due to, on the one hand, decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly, on the other hand, the transition of electrons from deep donor level of the oxygen vacancies to the valence band
另外，我們還對薄膜光致發光性質進行了分析和研究，結果表明：納米結構zno薄膜的紫外發光來源於帶間激子的輻射復合發光， pl譜的帶邊發射峰發生藍移是由於fe 、 co 、 cu對zn的替代使薄膜粒子的尺寸減小，使薄膜的有效帶隙增寬； zno薄膜的紅色發光，一方面是zno顆粒尺寸的減少，帶間的激子發射峰越來越弱直至猝滅，另一方面主要是與zno晶格中的o空位有關，由深能級復合發光引起紅光發射。 -
It is widely accepted that zno is one of the most promising materials for producing an ultraviolet laser at room temperature due to its wide direct band gap ( eg = 3. 3ev ) and large excitonic binding energy of 60 mev, which was testified by the results of optically pumped stimulated emission and lasing from zno thin films
氧化鋅作為一種寬帶隙半導體（ 3 . 3ev ） ，激子束縛能大（ 60mev ） ，在室溫下容易獲得強的激子發射，而且可能成為紫外激光的重要材料。因此，對氧化鋅的研究已成為繼gan之後寬帶隙半導體研究的又一熱點。 -
Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo, tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo. as we know, band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices
利用mg _ xzn _ （ 1 - x ） o薄膜，可以在保持zno六方纖鋅礦（ wurtzite ）結構的同時有效調節調節薄膜的禁帶寬度，制備出基於氧化鋅的量子阱、超晶格及相關的光電器件，如基於氧化鋅的紫外光探測器、紫外發光二極體和紫外激光二極體等光電子器件。 -
In experiments, the energy band structures of l - - d pc and 1 - - d pc sl are researched. we get the relation between the band gap width and the num - ber of the iayers, dielectric indices contrast, midgap wave - - length
在實驗工作中，研究了一維光子晶體的能帶結構，得到了帶隙寬度隨介質層數、介質折射率、中心波長變化的關系曲線。 -
Nanoparticles show significant quantum - size effect ( such as energy band discreteness, band gap broadening, blue shift in spectra etc. ) as sizes of particles are smaller than bohr radis of exciton of bulk material with same composition ( for example, cds ’ s bohr radium is 6nm )
當納米粒子的尺寸小於其塊狀材料的激子波爾半徑時（如cds的激子波爾半徑為6nm ） ，能夠表現出明顯的量子尺寸效應（如能帶離散，禁帶變寬，光譜藍移等） 。 -
Basing on the studying on the optical properties of the porous silicon by photoluminescence technology, this paper discusses the energy band of the porous silicon which is related to the microstructure of the porous silicon, puts forward the main luminescence, calculates the band gap of the porous silicon by the empirical pseudopotental method in the end
摘要在光致發光技術對多孔硅光學性質研究的基礎上討論了與多孔硅的微觀結構有關的多孔硅的能帶結構，用能量贗勢法模擬計算出多孔硅的能帶間隙。
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