base collector junction 中文意思是什麼
base collector junction
解釋
基極集電極秸-
And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown
而計算分析和二維數值模擬分析結果表明：梳狀集電結（基區）結構在不增加器件本徵集電結面積的條件下，增大了器件的本徵散熱面積和基區周長，改進了每個子器件單元內的散熱方式，提高了單元內結溫和電流分佈的均勻性，降低了器件的熱阻，增大了器件的耗散功率和輸出功率，較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾，並有利於改善器件抗二次擊穿的性能。 -
The main works are as the follows. in view of the contradiction among frequency, output power and dissipation power, propose deep - trench junction termination structure filling with isolated materials and collector - combed ( base - combed ) structure
主要工作包括以下幾個方面：針對頻率與功率、功耗的矛盾，提出了絕緣深阱結終端結構和梳狀集電結（基區）結構。 -
In this thesis two reverse - bias electrical stress methods were used to investigate the reliability of the devices. one is a typical of oc stress method with collector open and reverse - bias emitter - base junction. another one, a new technique, is fc stress method with forward - bias collector - base junction and reverse - bias emitter - base junction
本論文採用兩種反偏電應力方法考察器件的可靠性，一種為傳統的oc應力（集電極開路，發射結反向偏置）方法，另一種為新的方法fc應力（集電結正向偏置，發射結反向偏置）方法。
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