base impurity 中文意思是什麼
base impurity
解釋
基區雜質-
At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。 -
The prepared sdse modified zirconum meinbrane was tested at the wider range of tcmperaure and pressure and differellt composihons of hydrogen mixturc gases ( i. e. different hydrgen panal pressure ) in order to examine the performance of this membrane and the sole hpermselechvity of the membrane. the results showed tha the purity of the permeated hydrgen is l00 % at the base of the detection greatest lower lanit of the qhle mass spectrometer, and there was no impurity gas passed, the permeating flux and permeability of this membrane are from several decades times to one decade times more higher than tha of a palladum membran in the range of from 593k to 773k, puv = 0. 2 ~ 0. 3mpa, pdn = 4x l04pa - - 0. lmpa, the hydrogen permeatng flux is increased with the difference of the squto root of pressure, and presents a linear relationship, the pressure seems has no influence on the permeablity, the permeabi1ity is decreased with the increasing of the temperature, and presents an exponential relationship, accondng to the fitting curve of the relationship betwen the permeability and the temperatur derived from the experimenta daa, in the range of 593k ~ 773k, pup0. 2 ~ 0. 3mpa, pha = 4 x l0 # pa ~ 0
在更寬的溫度范圍、壓差范圍內，在不同原料氣組成（即不同的氫氣分壓）條件下，對所制備的鋯表面改性膜進行了滲氫性能實驗，考核了膜對氫的唯一選擇滲透性，結果表明：在四極質譜的檢測下限內，只有氫氣存在，而無雜質氣體通過；在593k 773k溫度范圍內，鋯表面改性選擇滲氫膜具有高於鈀膜數十倍至十幾倍的滲氫流量和滲氫系數；其滲氫流量隨著膜兩側氫分壓平方根摘要差的增大而增大，並且呈線性關系；壓力對膜的滲氫系數幾乎無影響；膜的滲氫系數隨著溫度的升高而下降，井巨呈指數關系：根據對實驗數據所作滲氫系數與溫度關系曲線的擬合，在溫度593k 773k范圍內，壓差p 、 0二0 -
Base on failure analysis and stress distribution analysis of the stuffing box using the lame formula and software ansys in predigested model, it is found that the composition of the material accorded with the requirement for stuffing box, and the microstructure with few impurity was qualified
摘要對產生裂紋的填料盤進行了失效分析，通過拉梅公式和有限元分析軟體對填料盤簡化模型進行了受力分析。
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