base-emitter 中文意思是什麼
base-emitter
解釋
基極-發射極-
The base region is always very much narrower than the emitter or collector regions.
基極總是比發射極和集電極薄得多。 -
On the base of these theory calculations, we passivated the front - surface both of different surface doping concentration solar cells by a thin layer of thermally grown sio2. the results show that the in heavy surface doping concentration cell is lower compared to the cell in light surface doping concentration. the majority of improvement in comes from the emitter surface passivation
接著採用sio2作為鈍化膜，從實驗上比較了在不同表面濃度下單晶硅太陽電池的鈍化效果，結果表明在高表面濃度下其開路電壓比低表面濃度下的開路電壓低，這開路電壓的提高主要來源於降低了前表面復合。 -
The density of holes in the base is less than the density of free electrons in the emitter and collector.
基極中空穴的密度小於發射極和集電極中自由電子的密度。 -
We shall take the typical emitter-to-base resistance as about 250 ohms.
我們取發射極基極電阻的典型值為250歐姆左右。 -
Common - base collector emitter connection
共基極集電極發射極連接 -
1 、 through the theoretical analysis and the medici simulation, according to the design directive, the structural parameters are designed comprehensively, including the dopant concentration and the depth of the emitter, the base dopant concentration and the depth ( especially the ge ratio ), the dopant concentration and the depth of the collector
主要工作是: 1 、通過理論分析和medici模擬，綜合設計得出符合設計指標的結構參數，主要包括:發射區的摻雜濃度和厚度?基區的摻雜濃度和厚度及基區中ge的組分比?集電區的摻雜濃度和厚度。 -
It is found that the current amplification coefficient strongly depends on the spin polarization of the electrons injected from the emitter to the base, the spin relaxation time and the width of the base
自旋晶體管中的電流放大系數主要取決于注入基區的自旋極化電子的極化程度，基區中自旋的馳豫時間及基區的寬度。 -
In the experiment we also observed negative differential resistance characteristics of gesi hbts with heavily doped base at high collector - emitter voltage and high current. a new interpretation to this phenomenon was given. this
在實驗中我們還觀察到，在高vce和大電流下，重摻雜基區gesihbt出現負阻現象，我們對這一現象進行了新的解釋，認為這是由熱電負反饋導致的。 -
Thus, it is believed that in subsequent high - temperature process, the base boron will outdiffuse very easily into emitter and collector, which will form a parasitic barrier for the electrons when moving from emitter into base and result in performance degradation of the device
這樣在後續的高溫工藝中就會引起基區的雜質外擴到集電區和發射區，產生電子勢壘，導致器件性能的嚴重退化。 -
Not only the top surfaces of emitter, base and collector but also the sidewalls of emitter and base are completely passivated by the proposed full sulfur treatment
最後，在本文中，將提供一個全面性表面硫化披覆方式之異質接面雙極性電晶體。 -
In this thesis two reverse - bias electrical stress methods were used to investigate the reliability of the devices. one is a typical of oc stress method with collector open and reverse - bias emitter - base junction. another one, a new technique, is fc stress method with forward - bias collector - base junction and reverse - bias emitter - base junction
本論文採用兩種反偏電應力方法考察器件的可靠性，一種為傳統的oc應力（集電極開路，發射結反向偏置）方法，另一種為新的方法fc應力（集電結正向偏置，發射結反向偏置）方法。 -
The film resistance parallel - connected between the emitter and the base of power devices can
薄膜電阻的升阻比尺、 。 -
In the diagram, the output of the error amp is connected to the base of an npn transistor : when the error amp drives current into this transistor ' s base, it allows current to flow from collector to emitter, and that transistor in turn pulls current from the base of the pass transistor
在這個圖里，誤差放大器的輸出端連接到了一個npn三極體的基極上：當誤差放大器輸出電流到了三極體的基極上，三極體允許電流從集電極向發射極流動，這個傳輸三極體工作時就是就是從基極吸取電流的過程。 -
A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy. the sige hbt
室溫下該晶體管的直流電流增益為30到50 ，基極開路下，收集極-發射極反向擊穿電壓 -
The new system uses short base - line to avoid the long base - line phase illegibility to get the signal arrive angle with higher precision, then use the phase differences without illegibility and the arriving angle to detected the emitter ' s range
該系統首先通過短基線測角，去除長基線接收機相位模糊，進而獲得更高精度的波達角度；然後通過無模糊的相位差側量值和波達角度估計值確定信號源與觀測站之間的距離。 -
In bjt devices, a small current flow at the base moderates a much larger current between the emitter and collector
在bjt器件中，基極小的電流調節發射極和接收極之間大得多的電流。
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