bias sputtering 中文意思是什麼

bias sputtering 解釋
偏壓濺射
  • bias : n 1 成見，先入之見，偏執，偏見 （opp Impartiality ）; 傾向，嗜好；癖 （towards）。2 （衣服等上面...
  • sputtering : 飛濺
  1. The components, microstructure, luminousness, thickness and surface topography of the films were analysised via xrd, uv ? vis, xps, ellipsometric examination and stm. the photocatalytic properties of these fims are characterized by the decomposition rate of methylene blue or rhodamine b. the effect of sputtering power, temperature, o2 mass flow, bias, w - doping and sputtering time on photocatalytic properties are discussed

    採用x射線衍射儀、紫外-可見光分光光度計、 x光電子能譜儀、薄膜厚度測試儀及掃描探針顯微鏡等測試手段，研究分析了薄膜的組分、結構、透光率、膜厚和表面形貌等。
  2. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  3. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  4. The study on low temperature pvd deposited sic film was carried out - m - employing bias assisted magnetron sputtering. furthermore, pvd deposited sic film mainly containing cubic phase was achieved at room temperature for. the first time

    採用偏壓輔助rf濺射法，對低溫物理氣相沉積sic薄膜進行了研究，並首次在室溫下制備出含有? sic構相併以其為主的sic薄膜。
  5. The phase structure of different cu - fe thin films were studied by using grazing incidence x - ray analysis ( gixa ). the texture and residual stress of different cu - fe thin films were measured by scan of x - ray diffraction ( xrd ) and 2 scan with different. the thicknesses of different thin films were characterized by means of small angle x - ray scattering ( saxs ) technique. by using atomic force microscope ( afm ) measured surface roughness of thin films. the component of different thin film was characterized by energy disperse spectrum ( eds ) and x - ray fluorescence ( xrf ). the magnetic properties of cu - fe thin films were measured by means of vibrating sample magnetometer ( vsm ). in addition, the giant magnetoresistance ( gmr ) effects of different films were also measured. the original resistance of the film fabricated by a direction - current magnetron sputtering system is directly affected by bias voltage

    利用掠入射x射線分析（ gixa ）技術對不同cu - fe薄膜的相結構進行了研究;利用xrd掃描及不同角度的2掃描對薄膜進行了結晶織構及殘余應力分析;運用小角x射線散射（ saxs ）技術測量了薄膜的厚度;採用原子力顯微鏡（ afm ）觀察了薄膜的表面形貌;運用能量損失譜（ eds ）及x射線熒光光譜（ xrf ）對薄膜進行了成分標定;使用振動樣品磁強計測量了不同cu - fe過飽和固溶體薄膜的磁性能;最後利用自製的磁阻性能測試設備測量了真空磁場熱處理前後不同薄膜的巨磁阻值。
  6. ( 4 ) the study of the optical band gap of cnx film by uv - vis spectrophotometer. ( 5 ) by using the microhardness tester, we study the hardness of cnx film on the ceremic substrate by dc magnetron reactive sputtering with the feed ar and n2 flow rate, film thickness, substrate temperature and substrate bias

    （ 5 ）用直流磁控反應濺射法，以陶瓷作為襯底，對在ar和n2不同流量、不同膜厚、不同基片溫度和對基片施加不同偏壓下沉積的薄膜，用< wp = 4 >顯微硬度計研究測試了不同工藝參數下的相應硬度。
  7. Bias voltages exert a small effect to the residual stress of al coatings, but do a considerable effect to the coatings composition such as the preferential sputtering in al - zn coatings at - 100v

    偏壓對鋁鍍層殘余應力的影響較小，且總體變化不大，但在- 100v偏壓下， al - zn鍍層的成分有明顯的擇優濺射現象。
  8. Sic film was coated on the surface of 316l stainless steel by substrate bias - assisted radio frequency ( rf ) sputtering as tritium permeation barrier ( tpb ) of first wall and blanket in fusion reactor

    採用分步偏壓輔助射頻（ rf ）濺射法在316l不銹鋼表面制備了sic薄膜。掃描電鏡（ sem ）觀察表明膜緻密、均勻、與基體結合牢固。
  9. Ptmn has practically been used as anti - ferromagnetic layer to pin ferromagnetic layers because of its large exchange bias, high blocking temperature and excellent thermal stability. on the other hand, ptmn films deposited by magnetron sputtering without substrate heating require a relatively high temperature post - deposition annealing in magnetic field to induce a unidirectional exchange field hes

    由於ptmn反鐵磁材料具有大的交換偏置，比較高的blocking溫度和較好的熱穩定性，在自旋閥結構中ptmn已經在實際應用上用來釘扎鐵磁層。
  10. The trapped amount of helium depends on the relative helium content in sputtering gas, applied bias and substrate temperature

    實驗研究了薄膜中的氦含量與濺射真空室氣氛中氦的相對含量、基底偏壓及沉積溫度間的關系。
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