bias temperature 中文意思是什麼

bias temperature 解釋
偏置溫度
  • bias : n 1 成見，先入之見，偏執，偏見 （opp Impartiality ）; 傾向，嗜好；癖 （towards）。2 （衣服等上面...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  1. As a mix - mode chip, the application - specific controller including analog signal and digital signal processing block can be applied to receiving, amplifying, processing, controlling signals of pir, and offer a wide application in some fields. in analog circuits, by sub - threshold mosfet, a self - bias current source is presented, which has a high power supply restrain ratio and a complementary to absolute temperature characters

    這款晶元是一款數模混合晶元，包括模擬信號處理（含模數介面模塊）和數字信號處理兩大模塊，完整實現對紅外信號的接收、放大、處理、控制，產生有效數字電平驅動繼電器、可控硅等負載，應用於自動燈等多種場合。
  2. Non - linear self - emendation and temperature - bias self - compensate techniques of array silicon piezoresistive pressure, acceleration sensor is also reported

    還討論了信號處理電路、非線性自校正、溫度漂移自補償及數據融合等技術。
  3. Steady state temperature humidity bias life test

    穩定狀態溫度濕度對壽命影響的試驗
  4. The components, microstructure, luminousness, thickness and surface topography of the films were analysised via xrd, uv ? vis, xps, ellipsometric examination and stm. the photocatalytic properties of these fims are characterized by the decomposition rate of methylene blue or rhodamine b. the effect of sputtering power, temperature, o2 mass flow, bias, w - doping and sputtering time on photocatalytic properties are discussed

    採用x射線衍射儀、紫外-可見光分光光度計、 x光電子能譜儀、薄膜厚度測試儀及掃描探針顯微鏡等測試手段，研究分析了薄膜的組分、結構、透光率、膜厚和表面形貌等。
  5. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  6. In the case when the temperature becomes near to 0 ? k, the decrease of temperature makes the giant - magnetoresistance larger when the bias is positive

    在絕對溫度零度附近， u為正時溫度下降導致巨磁電阻增加。
  7. Process parameters included rf power, substrate negative bias voltage, substrate temperature and working gas pressure

    工藝參數有射頻功率、襯底負偏壓、襯底溫度和工作氣壓等。
  8. The cmr materials have complex physical properties. some phenomena of the lacamno3 films are discussed, such as the effects of mismatch between the substrates and the films, the variation of the resistance of films under different bias currents. and the effects and improvements are discussed with details after the films are annealed in high temperature and high oxygen pressure

    超巨磁電阻材料有著復雜的物理性質，我們對lacamno _ 3薄膜材料所表現出來的一些現象進行了討論，如應力變化對薄膜性質的影響、不同偏置電流與薄膜電阻變化的關系等，還特別討論了薄膜在高溫、高氧壓環境中退火所帶來的影響以及薄膜性質的改善。
  9. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  10. Either the substrate temperature or the bias voltage as a parameter of particular interest was rised first and reduced after it

    偏壓和溫度降由較低的值變為較高的值;而後再將為較低的值。
  11. In this paper, optic gyro is viewed as the object of investigation and several aspects is investigated as follows. two important indexes - bias instability and scale factor were measured and investigated, including bias, its repetitiveness, temperature sensitivity, random walk coefficient and scale factor, its nonlinearity, asymmetry, repetitiveness. we make use of the allan variance method to separate the noise factors which affect the performance of the optic gyro, such as the angle random walk, bias instability, rate random walk, rate ramp, quantization noise, markov noise and sinusoidal noise

    本文以光學陀螺為研究對象，開展了以下幾方面的研究工作：本文對光學陀螺性能的兩個重要指標?標度因數和零偏穩定性進行了較為詳細的研究，其中包括陀螺的零偏b _ 0 、零偏重復性b _ r 、零偏溫度靈敏度b _ t 、隨機遊走系數rwc和標度因數k 、標度因數的非線性k _ n 、標度因數不對稱性k _ h 、標度因數重復性k _ r等等。
  12. The study on low temperature pvd deposited sic film was carried out - m - employing bias assisted magnetron sputtering. furthermore, pvd deposited sic film mainly containing cubic phase was achieved at room temperature for. the first time

    採用偏壓輔助rf濺射法，對低溫物理氣相沉積sic薄膜進行了研究，並首次在室溫下制備出含有? sic構相併以其為主的sic薄膜。
  13. This paper is mainly the research on the design techniques, facture technics, non - linear self - emendation and temperature - bias self - compensate techniques of dif - pressure sensors

    本論文主要研究了差壓傳感器的設計方法、製作工藝、非線性自校正及溫度漂移自補償等技術。
  14. By changing the negative bias current density, gaseous ratio and total pressure, nanocrystalline diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied. the diamond film presents very low compressive stress and excellent field emission character

    採用離子輔助轟擊法，以ch _ 4 、 h _ 2為源氣，襯底溫度為700 900 ，通過改變襯底負偏壓、 h _ 2和ch _ 4氣體比例以及工作氣壓，制備出納米金剛石薄膜，並對工藝參數對金剛石薄膜沉積的影響進行了研究。
  15. ( 4 ) the study of the optical band gap of cnx film by uv - vis spectrophotometer. ( 5 ) by using the microhardness tester, we study the hardness of cnx film on the ceremic substrate by dc magnetron reactive sputtering with the feed ar and n2 flow rate, film thickness, substrate temperature and substrate bias

    （ 5 ）用直流磁控反應濺射法，以陶瓷作為襯底，對在ar和n2不同流量、不同膜厚、不同基片溫度和對基片施加不同偏壓下沉積的薄膜，用< wp = 4 >顯微硬度計研究測試了不同工藝參數下的相應硬度。
  16. Particle ratios embody the chemical equilibrium driven by inelastic interaction during rapid expansion when the temperature decreases in the colliding system, the measured hadron ratios provide the chemical composition of the fireball at the chemical freeze - out point and access the baryon transporter stopping ) for the initial conditions at early stage of the collisions. in this paper, we study the anti - proton to proton ratio from ig7au + 197 au collisions, analyzing p / p ratio as functions of rapidity, transverse momentum and centrality at ^ / saw = 200gev and the dependence on the center of mass energy of p / p ratio, compared with the experimental results. it shows that the p / p ratio has n ' t obvious dependence on rapidity for mid - rapidity, but shows a slight increase trend with pt increasing in the range of pt < 1gev / c for mini - bias or central collisions, and rqmd shows a more remarkable correlation between p / p ratio and centrality than experiments do at snn = 200gev

    研究表明：對廠在中心快度區沒有明顯的快度依賴性，在越靠近邊緣快度區， p p呈下降趨勢；在對心碰撞或者最小無偏事件中， p p在低橫動量區域隨著橫動量的升高而增大； p隨著碰撞對心度的比實驗結果表現出稍強的隨對心度增大而減小的趨勢，尤其是有再散射ujrqmd模型；在中心快度區， p p隨著碰撞的質心能量的提高而快速的增大，與實驗結果一致；在低能，有末態粒子再散射的d較好的預言了的：但是在mc能量下，有末態粒子在散射的d所預言的p p值比實驗值要小。
  17. The traditional bandgap reference circuit was improved in the design, which includes the applying of self - bias structure and cascode structure, output of the opamp was used as self - bias voltage, saving bias circuit, and then it was helpful to get low power consumption. through using poly resistance of high value with low temperature coefficient, we reduced the influnce to circuit, if power supply did not change, we must decrease operating current to decrease power consumption, and increasing value of resistor could decrease the operating current efficiently. poly resistance of high value had large value of squared resistor, so we could save layout area

    對傳統帶隙基準電路進行了改進設計，採用自偏置結構和鏡像電流鏡結構，利用運放的輸出電壓作為運放的偏置電壓，節省了偏置電路，降低了功耗;使用低溫度系數的多晶硅高值電阻，降低了電阻溫漂對電路的影響;在電源電壓不變的情況下，為了減小功耗就必須減小工作電流，而增大電阻的阻值能有效地減小工作電流，多晶硅高值電阻的方塊電阻很大，可以節省版圖面積。
  18. A batch least - squares maximum likelihood estimator is employed to calibrate the model coefficients of accelerometer and a polynomial post - fit method is used to establish temperature models of these coefficients. the temperature models of accelerometer bias and scale factor of accelerometer are established between - 20oc and 50 oc. after compensating the temperature error by using these models, the post - fit residuals of the accelerometer output have been improved to 10 ? 5 g, and the trend term of accelerometer changing with temperature basically vanished

    採用最小二乘極大似然估計和多項式擬合的方法，分析加速度計靜態模型系數隨加速度計殼體溫度變化的規律，建立了- 20oc 50oc之間加速度計零偏和標度因數誤差的溫度模型，應用該模型對加速度計溫度干擾進行補償，補償后，加速度計輸出的擬合均方根誤差一到二個數量級，並且基本上消除了加速度計輸出隨溫度變化的趨勢項，使得加速度計測量精度得到了明顯提高。
  19. Subcircuit models are designed and simulated, which includes bias current source, voltage reference, error amplifier, pwm comparator, driver circuit, protection circuits for over - temperature, over - current. at last, combined with periphery component, the circuit is simulated, and the result meets the anticipant requirement

    並對集成電路內的各個模塊包括電流偏置電路、基準電壓電路、誤差放大電路、三角波振蕩發生電路、 pwm比較電路、驅動電路、過熱保護電路和過流保護等進行了具體的設計和模擬，並對整體應用電路進行了模擬，結果均達到了預先設定的指標。
  20. A tunability of 60 % and figure of merit of 133 have been achieved under 30v dc bias, demonstrating their usefulness for frequency - agile microwave devices at the liquid nitrogen temperature

    在液氮溫區表現出很好的微波器件應用前景。 4 、採用pld方法制備了高凰100 ）取向的bao . ssr05五o創51卿si集成薄膜。
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