bonding electron 中文意思是什麼
bonding electron
解釋
成鍵電子-
The diffusion welding behavior of single - crystalline cu to single - crystalline - aio with a nb film interlayer and the joint microstructure properties were studied by tem, sem / eds analyses and four - point bend testing. the nb film interlayer deposited by electron beam evaporation on the ceramic side prior to diffusion welding was found to be olycrytalline and fiber - textured after diffusion bonding, with the close - packed plane ( 110 ) being parallel to the ( 0001 ) basal plane of - aio
擴散連接技術是一門邊緣科學，涉及材料、擴散、相變、界面反應、接頭應力應變等各種行為，工藝參數多，雖然已經進行了大量的試驗研究，但卻對各種材料的連接機理尚未有明確的認識，為此人們試圖藉助于計算技術，對接頭行為進行數值模擬，以便找到共同規律，對擴散連接過程及質量進行預測與實時控制。 -
The fracture surface of the wires studied by scanning electron microscopy ( sem ) shows a suitable interfacial bonding between the fiber and aluminum
復合絲拉伸斷口的掃描電鏡（ sem ）觀察可見斷面有一定起伏，部分纖維拔出但長度較短，表明纖維與基體具有適當的界面結合。 -
The melted tungsten carbide would react with the steel matrix on the interface and the reaction zone was observed as a result. the reacting production was examined as fe3w3c by means of x - ray diffraction and scanning electron microscopy analysis. the reaction between tungsten particle and steel matrix could improve the interfacial bonding strength remarkably
Wc鋼復合材料的制備過程中， wc顆粒在高溫下發生了局部溶解並在wc顆粒和鋼基體界面處發生了界面反應； x射線衍射和電子衍射花樣分析表明，反應產物為高穩定性的fe _ 3w _ 3c ，界面反應有效地改善了wc顆粒與鋼基體的界面結合。 -
In the preceding section we discussed the valence bond(vb)or electron-pair theory of bonding.
在前面一節，我們討論了價鍵法電子配對理論。 -
Through analysis on the structure of valence electron shell, the atom radius, the bonding orbital and other important parameters, this paper discusses the irregularity in the second circle of nonmetal elements and the irregular courses
摘要本文通過對第二周期元素價電子層結構、原子半徑、成鍵軌道及其重要參數的分析，討論了第二周期非金屬元素的不規則現象，並且分析了產生這些不規則性的原因。 -
The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films. in the paper, ch and si - hn of a - si : h films, fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method, have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting. the effects of ratio of h2 / sih4 on ch and si - hn are studied
Fourier紅外透射（ ftir ）譜是研究氫化非晶硅（ a - si : h ）薄膜中氫含量（ c _ h ）及硅-氫鍵合模式（ si - h _ n ）最有效的手段，對于微波等離子體化學氣相沉積（ mwecrcvd ）方法在不同h _ 2 sih _ 4稀釋比下制備出的氫化非晶硅薄膜，我們通過紅外透射光譜的基線擬合、高斯擬合分析，得出了薄膜中的氫含量，硅氫鍵合方式及其組分，並分析了這些參數隨h _ 2 sih _ 4稀釋比變化的規律。
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