硅電阻 的英文怎麼說
中文拼音 [guīdiànzǔ]
硅電阻
英文
silicon resistor-
Taking the silicon diode as an example, through an analysis of the diode ' s current - voltage characters and the avometer circuit, the writer finds out the reasons for the differences in the amount when measuring the positive direct current equivalent resistance with different ohm grades
摘要以硅二極體為例，從二極體的伏安特性及萬用表內部電路的角度，分析了用指針式萬用表的不同歐姆檔位測量二極體的正向直流等效電阻時，其值緣何不同。Practice for conversion between resistivity and dopant density for boron - doped and phosphorus - doped silicon
摻硼磣磷硅單晶電阻率與摻雜劑濃度換算規程We adopt new production process of cold ends, so our sic heating elements have excellent specific rate of heat zone resistance and cold end resistance, saving energy, long life, avoiding over - temperature of cold ends to damage the furnace body. the commercial name of our sic heating elements is songshan silca heating elements
我們的碳化硅電熱元件採用新的冷端部生產工藝，具有優良的熱冷端電阻比，節能、壽命長，同時避免了因冷端部溫度過高對爐體造成的損害。Method for chemical analysis of manganin and novokostant resistance alloy the molybdosilicate blue photometric method for the determination of silicon content
錳銅和新康銅電阻合金化學分析方法硅鉬蘭光度法測定硅量Metalline phase diagram experimental stove, microcomputer controller, accessories ( from front to back : platinic resistance, rubber stopple and stainless steel thimble inserted into the glass tube, white carborundum tube
從前向後為鉑電阻、橡皮塞與不銹鋼套管插在玻璃管中、白色碳化硅管）This paper presents the performance of metal oxide anode material, deployment and configuration of anode ground bed, and makes contrast of grounding resistance and protective potential between metal oxide anode and duriron anode
文章介紹了金屬氧化物陽極材料的性能、陽極地床的布置及結構，並對比了金屬氧化物陽極與高硅鑄鐵陽極的接地電阻和保護電位。The sensor adopted micro melts technology and introduce aviation application science and technology ; using high temperature glass the micro processing silicon voltage dependent resistance strain gauge to melt on the stainless steel diaphragm
傳感器採用的微熔技術，引進航空應用科技，利用高溫玻璃將微加工硅壓敏電阻應變片熔化在不銹鋼膜片上。We select ni / cr alloy resistor as element together with ceramic embedding hearth ; select small flat - and - disc heat - even hubby ceramic sample holder, select ni / cr & ni / si thermoelectric couple ( type k ) as thermoscope with threads 0. 5 mm in diameter which is installed in the middle of the holders symmetrically ; select aluminum silicate fire - retardant fiber as materials for heat preservation ; design some hardware, for example temperature controller & transporter, signal amplifier etc ; design controlling curve to heat stove ; and introduce the method of least squares nonlinear regression and subsection function to deal with data. in order to obtain the reasonable operation conditions and operation curve, we have also done many theory analysis and experiment discussions
通過理論和試驗探討，選用鎳鉻合金電阻絲作為加熱元件，配以陶瓷質埋入式爐膛；選用陶瓷質小尺寸扁平?圓盤均熱塊體型樣品支持器；選用0 . 5mm絲徑鎳鉻?鎳硅熱電偶（ k ）作為測溫元件；熱電偶對稱安置在樣品支持器容器的中部；選用硅酸鋁耐火纖維作保溫材料；合理選用和設計了溫度控制器、溫度變送器、信號放大電路等硬體；採用升溫曲線來控制爐膛供熱過程；採用最小二乘法非線性回歸與分段函數相結合的曲線模擬方法，進行圖形處理。The product of electric furnace fittings including : micro - computer program temperature control instrument 、 refractory brick ( ultra - light weight energy saving brick ) 、 resistance wire 、 electroheat belts 、 electrical heat tube 、 silicon carbide rod 、 furnace bottom plate 、 muffle tank 、 vacuum sealed fan 、 wind wheel 、 axis 、 substructure 、 bin seat 、 flat shape plate 、 box 、 panel 、 weatherstrip plate 、 return air plate 、 bin 、 connection box 、 educe rod 、 thermocouple 、 thyristor 、 porcelain pipe 、 crucible 、 furnace chamber 、 furnace frame 、 charging bin 、 substructure 、 pit furnace cover lifter framework ( sole design ) and otherwise
電爐配件產品包括：微電腦程序控溫儀、耐火磚（超輕質節能磚） 、電阻絲、電阻帶、電熱管、硅碳棒、爐底板、馬弗罐、真空密封風機、風葉、軸、底座、料筐座、扁形板、箱體、面板、擋風板、回風板、料筐、爐柵、接線盒、引出棒、熱電偶、可控硅、瓷管、坩堝、爐膛、爐門、爐框、裝料筐、底座、井式爐蓋升降機構（獨家設計）等。Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。Among them insulated the insulation resistance testing instrument to adopt the high direct voltage testing method ; the ac insulate testing instrument adopt to the instrument of ac high voltage, and we also designed the protected circuit with excessive current ; the coil insulate testing instrument is adopt surge voltage impact testing method
其中絕緣電阻測試儀採用了直流高電壓測試法；工頻耐壓測試儀採用高壓工頻測試，並設計了過流保護電路；匝間耐壓測試儀採用浪涌電壓測試法，並設計了多路可控硅控制脈沖輸出電路。Standard slice of single crystal silicon resistivity
硅單晶電阻率標準樣片Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
用四點探針法對硅晶體和矽片電阻率的測試方法As the isotropic etching being related to the resistivity of the si material and combining the practical need of the solar cell production, the paper emphasis on the etching of the multicrystal si with resistivity of about 1. cm. the results : ( 1 ) reflectance characteristics the appropriate etching solutions has led to a reduction of the total integrated reflectance to 5. 7 %, which is quite comparable with conventionally pretextured si surface covered by a double layer arc
由於以hf + hno _ 3 + h _ 2o為溶液各向同性腐蝕與矽片的摻雜濃度有關，結合生產太陽電池的實際需要，本文重點研究了電阻率1 . cm左右的多晶硅的腐蝕情況，結果如下： （ 1 ）反射特性在適當的hf + hno _ 3 + h _ 2o溶液中制備的多晶硅電池的絨面，其反射率降到了5 . 7 。Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established
鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽電池性能的影響、表面和界面復合速度的理論表達式；研究得到了減反射膜對太陽電池短路電流增量比的極限；建立了太陽電池光譜響應、柵線電極接觸電阻和少子壽命等測試系統。Detail specification for silicon coaxial resistive switching diode
硅同軸電阻開關二極體詳細規范The technic of aluminosilicate refractory fibre applied to resistance furnace
硅酸鋁耐火纖維氈在電阻爐上的應用Test method for resistivity of silicon epitaxial layers by area contacts three - probe techniques
硅外延層電阻率的面接觸三探針.測試方法Because of the limitation of thin silicon film epitaxial technology, it is difficult to grow thin silicon film epitaxial of thickness less than 2 m for a long time, which makes the series resistance large
但長期以來，由於薄硅外延生長技術的限制，無法生長出優質的厚度小於2 m的薄硅外延層，使硅肖特基二極體的串聯電阻無法降的更低，限制了其截止頻率的提高。Improvement of technological process and facilities of alumina silicate fiber manufactured in the resistance - heated furnace
硅酸鋁纖維電阻法成纖工藝和設備的改進分享友人