硅電容器 的英文怎麼說

中文拼音 [guīdiànróngqì]
硅電容器 英文
[電子學] silicon capacitor
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 電容器 : capacitor; condenser; current condenser; electrical condenser
  • 電容 : electric capacity; capacitance; capacity
  1. We select ni / cr alloy resistor as element together with ceramic embedding hearth ; select small flat - and - disc heat - even hubby ceramic sample holder, select ni / cr & ni / si thermoelectric couple ( type k ) as thermoscope with threads 0. 5 mm in diameter which is installed in the middle of the holders symmetrically ; select aluminum silicate fire - retardant fiber as materials for heat preservation ; design some hardware, for example temperature controller & transporter, signal amplifier etc ; design controlling curve to heat stove ; and introduce the method of least squares nonlinear regression and subsection function to deal with data. in order to obtain the reasonable operation conditions and operation curve, we have also done many theory analysis and experiment discussions

    通過理論和試驗探討，選用鎳鉻合金電阻絲作為加熱元件，配以陶瓷質埋入式爐膛；選用陶瓷質小尺寸扁平?圓盤均熱塊體型樣品支持器；選用0 . 5mm絲徑鎳鉻?鎳硅熱電偶（ k ）作為測溫元件；熱電偶對稱安置在樣品支持器容器的中部；選用硅酸鋁耐火纖維作保溫材料；合理選用和設計了溫度控制器、溫度變送器、信號放大電路等硬體；採用升溫曲線來控制爐膛供熱過程；採用最小二乘法非線性回歸與分段函數相結合的曲線模擬方法，進行圖形處理。
  2. Semiconductor discrete device. detail specification for silicon tuning varactor diode for type 2cc51e

    半導體分立器件. 2cc51e型硅電調變容二極體詳細規范
  3. In the dissertation, the effects of the air slide - film damping on the capacitive accelerometers having different slot structures which are completely or partly etched, and fabricated by the anodic bonding between silicon and glass and bulk silicon micromachining process are researched by changing the distance between the moving structure and substrate, the thickness of the structure, the width of the completely etched slot structure, the depth of the partly etched slot structure according to the two well known air slide - film damping models

    對于橫向運動的體微機械器件，其周圍空氣表現為滑膜阻尼。本文基於滑膜阻尼的兩個模型，通過改變振子與襯底的間距、振子的厚度、刻透的柵槽的寬度、沒有刻透的柵槽的深度等參數，研究了這些參數對硅?玻璃鍵合工藝製作的體硅微機械電容式傳感器阻尼特性的影響。
  4. Flexibility, processability, low cost, interesting optical - electric properties and so on make organic materials be a good substitute for inorganic ones. modification of inorganics by organics can change surface properties of inorganics, for example, frictional, optical, electrical, chemical and biocompatible properties. on the other hand, many interests have been shown to integration of functional organics in si - base devices because of their great promise in optoelectronic, micro - electronic and sensor applications

    通過對無機半導體材料進行有機改性，可以改變無機材料的表面化學性質，生物相容性質，光電性質等等，因此，有機無機復合材料在光電器件、生物傳感、微電子器件的應用領域有著很好的應用前景，尤其是在微電子工業中廣泛使用的硅材料與有機光電材料的復合更是備受關注。
  5. This paper aims at investigating and realizing an asic cell of high performance instrumentation amplifier based on the standard cmos process, which is employed in the readout circuits of microsilicon sensor as a part of soc

    本文的主要目的是研究並採用標準cmos工藝實現一種高性能的儀表放大器專用集成電路模塊，該模塊專用於電容式微硅傳感器的一種soc模式讀出電路中。
  6. In order to make the sensitivity of 2 - demension accelerometer along the two main arbors almost identical, symmetric four - beam structure that embeds a double - sides interdigitated differential capacitive with puckered beam in two directions was used as sensitive component. in addition, the differential capacitive accelerometer fabricated by bulky silicon micromechanical technique has high sensitivity, wide measurement scope, less nonlinear error, and simple converting circuit. then, the structure parameters of the sensitive component were calculated and stimulated, which results in a set of the optimized structure design parameters, main fabrication procedure and several key fabrication technology

    為使二維振動傳感器在兩主軸方向的靈敏度大致相同，敏感元件採用高度對稱的四梁結構，其中每個軸向上均採用帶折疊梁的雙側叉指電容結構，採用體硅微機械工藝製作的高深寬比叉指電容式敏感元件，具有高靈敏度、寬量程、非線性誤差小、外圍電路簡單等優點;對設計的敏感元件結構參數進行了計算，並利用有限元法進行了模擬分析，根據模擬結果得出了優化參數;在確定敏感結構的基礎上，研究了敏感元件採用體硅微機械加工工藝製作的工藝流程和關鍵工藝技術;對敏感晶元內部的c - v介面電路進行了原理設計與分析，利用差動測量技術得到由振動引起的微小電容變化量，經c - v介面電路進行相位調制處理，然後通過解調輸出與加速度成正比的電壓信號。
  7. It is believed that p - si tft will be the main type in the future panel display. among the process of manufacture p - si tft, the source and drain will have the superposition with grid for the reason of machine ’ s alignment error. the superposition will bring superposition capacitance and it will badly cut down the electric performance

    在制備多晶硅tft時，由於機器的套準誤差會在柵極與源、漏極之間產生重疊部分，這樣就造成了柵源、柵漏之間的交疊電容，交疊電容的存在嚴重影響了多晶硅tft的性能，而利用自對準工藝制備的多晶硅tft則避免了交疊電容的產生。
  8. The pin silicon photodiode made by alice - china group, which has a large area and high performances, is an important part of the photon spectrometer ( pros ) pbwo4 detector read - out system on the alice experiment. the pin diode has a sensitive area of 16x17 mm2. its leakage current is lower than 5na at room temperature

    本工作研製的pin硅光電二極體的靈敏區面積為16x17mm2 ，常溫漏電流小於5na ，紫光區量子效率約為83 % ，結電容為110 - 120pf ，以及由pin光電二極體與電荷靈敏前置放大器組成的讀出系統的噪聲水平在- 25下小於527個等效噪聲電荷，並經過了長期性能穩定性的考驗
  9. Hv - tsc is an important and typical component of svc. its application in power systems provides an effective means for the safety and economic operation of the system. hv - tsc can also provide a good solution to voltage and power quality problems

    高壓tsc裝置是指額定工作電壓為6kv 35kv可控硅投切電容器補償裝置，其是一種典型靜止無功補償器，其對增強系統穩定性、提高系統運行經濟性，保證電壓質量及改善電能質量都能發揮良好的作用。
  10. The research work is involved in the main circuits structure and the protection of the valves, the determination for the important parameters of the components in the main circuits, the triggering system of the valves, the technology of hv - tsc valve ' s turn - on without inrush current presentation, and the function design for the controller of the thyristor valves. a real hv - tsc valve controller corresponding to the research work has been developed. field tests has shown that the hv - tsc valve controller is able to provide effectively and reliably control and protection for the hv - tsc valves

    本論文對高壓tsc裝置所用的可控硅開關的主電路電氣結構、主電路的保護電路、主電路中的重要元件參數的選擇、可控硅開關的觸發系統構成、無沖擊涌流投入電容器技術、可控硅開關控制器功能設計及其功能實現進行了深入的研究和探討，並對可控硅開關控制器進行了實際的設計和試制，現場測試證明其對可控硅開關的控制是可靠、有效的。
  11. We have many industry automize instruments such as temperature transmitter ( integrate temperature transmitter module ( double temperature transmitter module ), integrate temperature transmitter, track isolation temperature transmitter, hanging temperature transmitter, pressure transmitter ( expanding silicon pressure transmitter, sapphire pressure transmitter, spraying ( metal slim film ) pressure transmitter, strain pressure transmitter, ceramic resistor, capacitance pressure transmitter, 1151 and 3151 series pressure transmitter, fluid location transmitter module ( specializing for fluid location meter ), collocated electricity meter ( sigle round, double round ), signal isolation ( single round, double round ), transducer ( temperature, pressure ), display head ( showing 100 % scale, lcd fluid crystal, led digital display ), numerical instrument and so on

    產品有溫度變送器（一體化溫度變送器模塊（雙支溫變模塊） 、一體化溫度變送器、導軌式隔離溫度變送器、壁掛式溫度變送器、架裝式溫度變送器） 、壓力變送器（擴散硅壓力變送器、藍寶石壓力變送器、濺射式（金屬薄膜）壓力變送器、應變式壓力變送器、陶瓷電阻、電容壓力變送器、 1151 、 3151系列壓力變送器） 、液位變送器模塊（專為液位計廠配套） 、配電器（單迴路、雙迴路） 、信號隔離器（單迴路、雙迴路） 、傳感器（溫度、壓力） 、配變送器的顯示表頭（ 100刻度顯示、 lcd液晶顯示、 led數碼顯示） 、數字儀表等工業自動化儀器儀表。
  12. A driving signal with a dc bias voltage and ac voltage is usually necessary for sensing very small capacitance. the reliable operation conditions of the capacitive sensor for foreign acceleration had been researched with the assumption of the parallel comb plates. but the comb plates are actually not parallel for the reason of the drie process

    前人在研究外界加速度信號對傳感器的作用時，假定驅動信號產生的靜電力作用在平行梳齒電容極板上，但是，在用drie工藝對硅進行刻蝕時會產生側蝕效應，從而得到的梳齒電容有一定的傾斜角度。
  13. This paper aims at designing a relaxation oscillator which is used in the readout circuits for silicon capacitive accelerometers with cmos process

    採用cmos工藝設計出應用在微硅電容加速度傳感器單片測試電路中的弛張振蕩器即是本文的主要研究目的。
  14. The accelerometer which has simple fabricated process and high sensitivity and small parasitic capacitance and residual stress is hybrid integrated with the interface circuit using ic nude chip. so the density of the package is increased, and the noise of the sensing system is decreased. these found the base of capacitive accelerometer module using the mcm method

    該傳感器製作工藝簡單，靈敏度高，支撐梁採用u型，減小了刻蝕后的殘余應力，用玻璃作為襯底，減小了襯底和硅可動質量塊間的寄生電容，且把傳感器晶元和用ic裸片製作的介面電路集成在一起，提高了封裝密度，減小了傳感器系統的噪聲，為採用mcm技術製作電容式加速度傳感器模塊打下了基礎。
  15. This paper presents a new capacitive accelerator readout circuit used pulse width modulated ( pwm ) in single chip

    本文的目的就是研究與設計單片微硅電容加速度傳感器讀出電路中頻變脈沖寬度調制模塊。
  16. In many applications, microsilicon acceleration sensor shows many advantages making it important to investigated its readout circuits

    電容式微硅加速度傳感器在許多應用中體現出的極大優勢使得對它的讀出電路的研究已成為一個重要課題。
  17. In this paper, the soi technology is applied to the integrated circuit fabrication. soi technology overcomes some disadvantages of bulk silicon because of its inherent structure. it has the advantages such as no latch - up effect, low parasitic capacitance, high transconductance, simple structure, high density and good anti - radiation

    Soi技術以其獨特的材料結構有效地克服了體硅材料的不足，它具有無閉鎖效應；漏源寄生電容小；較高的跨導和電流驅動能力；器件結構簡單；器件之間距離小；集成度高；抗輻射性能優良等優點。
  18. Abstract : the development of the chip ceramic capacitor, pdp ( plasma displays ), silicon solar cell and electronic package was reviewed in the present paper, and the requirements to electronic pastes and the growing trend of base metals electronic pastes were introduced

    摘要：本文評述了我國多層片式陶瓷電容器、 pdp平板顯示器、硅太陽能電池、電子封裝等的發展現狀以及對電子漿料的要求，同時還評述了賤金屬漿料的發展趨勢。
  19. Now the stabilization performance has been advanced and the silicon capacitance different pressure sensor has been developed successfully

    可以說成功地研製出了硅電容式差壓傳感器。
  20. The silicon capacitance different pressure sensor was developed in the shenyang institute of instrumentation technology with some kinds of the mems processing

    硅電容式差壓傳感器是在沈陽儀器儀表工藝研究所研製的，利用了mems的各種工藝。
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