boron concentration 中文意思是什麼

boron concentration 解釋
硼濃度
  • boron : n. 【化學】硼。adj. -ic ,-ization n. 【冶金】滲硼。
  • concentration : n. 1. 集中。2. 【化學】提濃，蒸濃，濃縮；濃度；稠密度；【礦物】汰選，選礦，富化。3. 集中注意，專心。
  1. Surface chemical analysis - secondary ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質譜法.利用均勻摻雜材料測定硅中硼原子濃度
  2. In order to avoid light degradation, low interstitial oxygen content and low boron concentration b - doped p - type cz - si material should be used, for example, the resistivity can be from 5 - 10. cm, the efficiency has reached to 22. 0 %

    上述研究工作表明：為了避免光衰減，提高矽片少子壽命，應該選擇低氧濃度的矽片，並降低硼的摻雜濃度，即：使用高阻材料製作太陽電池。
  3. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。
  4. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  5. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  6. In addition, the fission rate in the pwr can also be controlled by adjusting the boron a neutron absorber concentration in the primary coolant circuit

    此外，壓水式反應堆的核裂變也可透過調節一迴路內冷卻劑中的硼濃度來控制硼亦是一種中子吸收體。
  7. In addition, the fission rate in the pwr can also be controlled by adjusting the boron ( a neutron absorber ) concentration in the primary coolant circuit

    此外，壓水式反應堆的核裂變也可透過調節一迴路內冷卻劑中的硼濃度來控制（硼亦是一種中子吸收體） 。
  8. Surface chemical analysis - secondary - ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質光譜測定法.採用均勻塗料的硅中硼原子濃度測定
  9. With superior properties such as high thermal conductivity, high hole mobility, excellent chemical, thermal and radioactive stability, p - type diamond electrode can also greatly improve the stability of the devices, which complement the current electrode. the effect of boron concentration on the electronic properties of diamond films was investigated by raman spectroscopy, x - ray photoelectron spectroscopy and

    結果表明，摻雜金剛石膜突出的光學及電學性質及優異的抗高溫、抗腐蝕能力，機械強度大等優點，使其在作lppp發光器件的電極時，能克服一般電極在空氣中易於氧化、穩定性差的缺點，大大改善器件穩定性，提高器件壽命。
  10. Analysis of boron background concentration and pollution status of water in kuandian county

    寬甸縣水中硼的背景濃度及污染現狀分析
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