buffer intensity 中文意思是什麼
buffer intensity
解釋
緩沖強度-
The main contents are as followings : ( 1 ) the rules of choosing characteristic lines of fe and ni elements in the cu - pb alloy are investigated ; ( 2 ) the characteristic line of the impurity element and that of the reference element makes up a line pair. the intensity ratio of the line pair measured as an y - axis and the corresponding concentration ratio as x - axis, calibration curves for composition analysis is fitted at the 4 kinds of buffer gases
Q ）採用內標法，由樣品中雜質元素的分析線和內標元素參考線組成分析線對，對五種不同的鉛黃銅樣品，實驗通過測定了雜質元素分析線隊的強度比，以分析線對的強度比為縱坐標、分析線對所對應元素的含量比為橫坐標，擬合出了一系列在四種緩沖氣體中的定標曲線。 -
( 5 ) the intensity and s / b of libs are investigated in detail at the different buffer gas, gas pressure, and laser power. the results show that under the 120 mj laser energy, for ar the best s / b is at 200 torr pressure, but for air at 100 torr and he at 300 torr. duration of atomic spectra in ar is longer than that in air
（ 5 ）實驗測定了不同的緩沖氣體和氣壓以及不同的入射激光脈沖能量對原子譜線強度和背景光的影響，結果顯示在氬氣環境下，當氣壓約為200torr 、激光的能量約為120mj時， libs的s b最大；在空氣和氦氣中獲得最佳s b時的氣壓約分別為100torr和300torr ；原子譜線在氮氣環境中持續的時間要比在空氣中持續的時間長。 -
In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %
通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。 -
Ternary compound bnxpi - x films of quality are deposited and the ultraviolet absorbance characteristics of bnxp, - x films were investigated in the thesis, too. with the quantity of phosphorus dopant, the optical bandgap modulation of bnxpi is achieved successfully. in addition, the combined intensity of bnxp, - x films and substrates was enhanced by depositing the buffer layer
實驗採用磷對氮化硼進行摻雜，成功地在光學石英玻璃襯底上沉積了磷摻雜氮化硼（ bn _ xp _ （ 1 - x ） ）薄膜，研究了該薄膜的紫外光敏特性，其吸收邊在240nm 400nm的紫外波段內可以連續變化，同時也實現了對氮化硼光學帶隙在3 . 8ev 5 . 3ev范圍內的連續可控調制。 -
The device is a synthetical applicating example of phase modulator, intensity modulator and directional coupler theory. the characters and fabricating process of linbo _ 3 optical waveguide, electrodes design principle, the influence of sio _ 2 dielectric buffer layer on the performance of the device and design principle of tapped power ( ratio ) are analyzed
該器件是相位調制、強度調制和定向耦合器理論綜合應用的典型，文章從理論上分析了linbo _ 3光波導的特點、製作工藝、電極設計原理、 sio _ 2介質緩沖層對器件性能的影響和抽頭功率的設計原理等。
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