c-bias 中文意思是什麼
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C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films. low bias is helpful for the basal plane orientation, while under high bias the films shows that the c axis of bn was nearly parallel to the substrate
C ）偏壓或離子轟擊對取向有重要影響，低偏壓有利於形成基面對襯底平行的取向，而在高偏壓下，薄膜表現為c軸平行襯底的取向。 -
The transformer isolates the transistors with regard to d-c bias voltage.
變壓器可在兩個晶體管之間隔離直流偏壓。 -
It is found that the main electronic conduction mechanism in the high field regions of the i - v characteristics is identified to be fowlernordheim tunneling. the effect of y ray on sic mos c - v characteristics depends strongly on the bias voltage applied to the gate electrode during irrad
當氧化層中存在較強電場時，電離輻照對s匯mos電容的影響會更明顯， sicmos器件比st器件具有更好的抗y輻照的能力。 -
Base on two - stage approach, we adjust experimental parameter to develop a new method ( three - stage approach ) to prepare c - bn thin films. the study proves that it is favorable to prepare bn thin films of high cubic phase content. depositing time and substrate bias voltage in the first stage are 5 min and - 180v respectively
根據si片上bn薄膜的反射光譜r （ ）和熔融石英片上bn薄膜的反射光譜r （ ）和透射光譜t （ ）各自獨立的計算了bn薄膜的光學帶隙，利用兩種方法分別計算立方相含量均約為55 %的bn薄膜的禁帶寬度為5 . 38ev和5 . 4ev ，其結果均和由經驗公式計算得到的結果非常接近。 -
We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5
研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。 -
Then a thorough analysis to the bias - magnetic of ppfc is made. the retraining effects of the main parameters ( include clamping capacitance c, output filter inductor lf, load r, the leakage inductor ls and source winding resistance r ) are studied under the conditions of different von, different ton and different winding parameters. then a conclusion can be drew, that the smaller lf and the bigger r are, the better the bias - magnetic is restrained and c has a best value to retrain the bias - magnetic
分別對管壓降不同，導通時間不同以及兩原邊繞組參數不一致（包括漏感、電阻、激磁電感三種情況）的情況下，主要參數（包括箝位電容c 、輸出濾波電感lf 、負載r 、原邊繞組漏感ls 、原邊繞組電阻r ）對偏磁的抑制作用進行了模擬分析研究，得出lf越小， r越大時激磁磁勢偏移量ni越小， c在其他參數確定時對抑制偏磁有最優值等結論，為參數的優化設計提供了依據。 -
Particle ratios embody the chemical equilibrium driven by inelastic interaction during rapid expansion when the temperature decreases in the colliding system, the measured hadron ratios provide the chemical composition of the fireball at the chemical freeze - out point and access the baryon transporter stopping ) for the initial conditions at early stage of the collisions. in this paper, we study the anti - proton to proton ratio from ig7au + 197 au collisions, analyzing p / p ratio as functions of rapidity, transverse momentum and centrality at ^ / saw = 200gev and the dependence on the center of mass energy of p / p ratio, compared with the experimental results. it shows that the p / p ratio has n ' t obvious dependence on rapidity for mid - rapidity, but shows a slight increase trend with pt increasing in the range of pt < 1gev / c for mini - bias or central collisions, and rqmd shows a more remarkable correlation between p / p ratio and centrality than experiments do at snn = 200gev
研究表明：對廠在中心快度區沒有明顯的快度依賴性，在越靠近邊緣快度區， p p呈下降趨勢；在對心碰撞或者最小無偏事件中， p p在低橫動量區域隨著橫動量的升高而增大； p隨著碰撞對心度的比實驗結果表現出稍強的隨對心度增大而減小的趨勢，尤其是有再散射ujrqmd模型；在中心快度區， p p隨著碰撞的質心能量的提高而快速的增大，與實驗結果一致；在低能，有末態粒子再散射的d較好的預言了的：但是在mc能量下，有末態粒子在散射的d所預言的p p值比實驗值要小。 -
However, when the applied bias voltage is located within negative slope regions of u - i curve, the superlattice will undergo a very fast dynamic process, changing from one stable state to another stable state. the superlattice exhibits temporal current oscillations in the negative differential conductivity region at fixed d. c
當外加電壓使電流處于正微分電導區變動時，超晶格的高低電場疇之間的疇邊界不發生移動，只是相應的電場強度作些調整；當外加電壓使電流處于負阻區域時，超晶格將經歷一個穩態到另外一個穩態的動力學轉變。 -
In the paper, the two - step approach, in which the deposition procedure was divided into two sections by decrease the substrate temperature or the bias voltage, was used in order to synthesize c - bn film by the conventional js - 450a rf system. the influence of process parameters for nucleation and growth of depositing c - bn was studied separately
本論文使用傳統的js - 450a射頻濺射系統利用兩步法（降溫降偏壓法）沉積立方氮化硼薄膜，分別研究了各工藝參數對立方氮化硼成核和生長的影響。 -
Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature
本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。 -
Structure and properties of ta - c films deposited by filtered cathodic vacuum arc technology as a function of substrate bias
襯底偏壓對四面體非晶碳膜結構和性能的影響 -
However, the emission wavelength of a dfb - ld needs to be carefully turned on the predetermined wavelength grid by adjusting both laser temperature and bias current. furthermore, dfb - ld has such drawbacks as a relatively large variation of the lasing wavelength with ambient temperature ( ~ 0. 1nm / c ) which restricts its application in dwdm systems
然而dfb - ld的激射波長受溫度（ 0 . 1nm ）和偏置電流的影響較大，只有通過調節dfb - ld的溫度和偏置電流，其激射波長才能被調諧在預置的波長處。 -
For problems of vertical transport in the superlattice at fixed d. c. bias voltage, ode45 is optional. for problems of vertical transport in the superlattice with the increasing bias voltage and the relatively higher doped densities, ode15s is optional
針對較高難度問題，即研究偏壓從零線性上升而且摻雜參數v較大時的超晶格縱向輸運問題（ du / dt （ 0 ） ，一般首選ode15s 。 -
The experimental evidences indicated that three deposition parameters, i. e., energy density of laser, rf plasma power and substrate negative bias played key roles in the growth of the c - bn films at room temperature. on this basis, the explanation of formation process and mechanism of c - bn film was given
通過分析各個沉積參數在薄膜生長中的作用，證明三個沉積參數：激光能量密度、射頻功率和基底負偏壓是室溫下生長立方氮化硼薄膜的關鍵因素，並在此基礎上初步解釋了立方氮化硼薄膜的形成過程及機理。
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