carrier concentration 中文意思是什麼

carrier concentration 解釋
載流子濃度
  • carrier : n 1 運送人，搬夫；負荷者；使役，〈美國〉信差，郵遞員；送報人；〈英國〉運輸行，運輸業者。2 傳書鴿...
  • concentration : n. 1. 集中。2. 【化學】提濃，蒸濃，濃縮；濃度；稠密度；【礦物】汰選，選礦，富化。3. 集中注意，專心。
  1. The samples with smaller grain sides were obtained in our experiment, and the properties are corresponding with that of those samples prepared by melting method mentioned previously. several approaches can be proposed for further increasing the thermoelectric properties. preparation of the material with different compositional deviations availably controlled from stoichiometry is one of the ways to change the carrier concentration, and hence to optimize the value of power factor

    該方法獲取的塊體樣品的片狀顆粒的粒度遠小於熔煉法制備的樣品，樣品的性能也與熔煉法相當，如果能有效控制樣品的化學計量比，提高生成物的純度將會更大程度的提高材料的熱電性能。
  2. In addition, the optimized carrier concentration in the membrane was determined. the bsa - fixed membranes were used to remove lipophilic toxins, bilirubin, from the simulation plasma

    將所制備的促進傳遞膜應用於體外脫毒的模擬實驗，該膜對親脂性毒物膽紅素具有較高的清除性能。
  3. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  4. The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface

    實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。
  5. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  6. The experiments show : growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced

    實驗表明：生長溫度是一個重要的生長參數，它對外延層的表面形貌、組分、結晶質量、遷移率、載流子濃度有著很大影響。
  7. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  8. This effect was gradually decreased with the increase of snte content in the pseudo - binary alloys as well as the increase of temperature, which is considered to be caused by the change of scattering mechanism, the saturation of carrier concentration as well as the ag atoms occupying the

    隨著膺ti合金rfsnte含量和測試溫度的上升， ag摻雜的作用逐漸降低，胸二兒合金的性能逐漸惡化。其原因被認為是由於散射機制的改變、載流子濃度趨于飽和以及ag作為間隙原一了提供額外施主。
  9. Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample

    發現兩種摻雜方法的載流子濃度大體上都是隨著擴散深度的增加而下降，不同的是離子注入樣品的載流子最高濃度處于離表面深度0 . 248151 m處，而擴散樣品的載流子最高濃度處于表面，並摻錳（ mn ）砷化鋅（ gaas ）材料性質的研究且還發現相對于純mn源擴散樣品來說， mnas源擴散樣品的表面較為光滑，且表面載流子濃度高達1020 cm 』數量級。
  10. The intrinsic carrier concentration reduces when decreasing the v / iii ratio. the high quality of in0. 53gao. 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs. when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0. 2 um the mobility becomes the maximum and the carrier concentration is the lowest

    /比對外延層的表面形貌有較大影響，增大/比有利於提高材料的結晶質量；隨著/比增加，遷移率升高；本徵載流子濃度隨著/比減少而降低； ash _ 3和ph _ 3轉換時間在10秒到30秒之間可以獲得質量較好的ingaas外延層；在inp緩沖層厚度為0 . 2 m時遷移率達到最大，載流子濃度達到最低。
  11. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
  12. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  13. With the finite - difference method, self - consistent solutions for the possion ' s equation, injected current density, carrier concentration, optical field and thermal conduction equations have been realized to study the thermal - field properties, the coupling of electricity, thermal and optical - fields, and the influences of n - dbr and double oxide - confining regions on the characteristics of vcsels

    本文建立了一個直接耦合的準三維理論模型，通過有限差分法求解泊松方程、載流子擴散方程、熱傳導方程和光場方程的自洽解，研究了vcsel的熱場分佈特性，並實現了電、熱和光場的耦合，同時考慮了n - dbr及雙氧化限制層對vcsel特性的影響。
  14. Electrochemistry c - v method was employed to measure the carrier concentration profile distribution of samples, discovered that the carrier concentration decreased with increasing of the diffusion depth, and the peak of concentration located at 0. 25 m beneath the surface

    利用電化學c - v法對樣品的載流子濃度的縱向分佈進行了研究，發現在距離樣品表面0 . 25 m處載流子濃度達到最大。
  15. Determination of carrier concentration in gallium arsenide by the plasma resonance minimum

    砷化鎵中載流子濃度等離子共振測量方法
  16. Gallium arsenide epitaxial layer - determination of carrier concentration - voltage - capacitance method

    砷化鎵外延層載流子濃度電容-電壓測量方法
  17. The results indicate that with increasing the thickness of fes2 thin films, the electrical conductivity, the carrier concentration and the absorption coefficient decrease

    結果表明，隨著薄膜厚度的增加， fes2的電阻率升高，載流子濃度下降，在高吸收區fes2薄膜的光吸收系數也呈下降趨勢。
  18. The influence of sulfidation pressure on microstructure is insignificant. the electrical resistivity is lower because the carrier concentration is very higher for the films annealed at lookpa sulfidation pressure

    硫化壓力的變化對薄膜的組織結構影響不明顯，當硫化壓力為100kpa時，薄膜具有較高的載流子濃度及較低的薄膜電阻率。
  19. Fe layers of different thickness have been converted to fes2 thin films by thermal sulfidation. the influence of the thickness on the crystal structure, electrical resistivity, carrier concentration, absorption coefficient and energy gap of fes2 thin films have been investigated

    採用硫化不同厚度的fe膜制備了不同厚度的fes2薄膜的方法，研究了不同厚度fes2薄膜的晶體結構、電阻率、載流子濃度、光吸收系數以及禁帶寬度。
  20. With the introduction of the dopants, the effective mass of carriers was changed and the seebeck coefficient was increased. at the mean time, the dopants reduced the forbidden energy gap, which changed the carrier concentration and thus increased electrical conductivity. by calculating the forbidden energy gap and electrical conductivity of mg2si specimen doped with different amount sb, the mechanism of transference changed abruptly at 625k

    在mg _ 2si熱電材料基體中摻雜te 、 sb元素后，在結構中引入了缺陷，增大了體武漢理工大學博士學位論文系中載流子有效質量，提高了seebeck系數;降低了體系導電活化能，提高了電導率，同時也降低了熱導率。
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