cathode region 中文意思是什麼

cathode region 解釋
陰極區
  • cathode : n. 【電學】陰極，負極。
  • region : n. 1. 地方，地域，地帶；地區；行政區，管轄區，區；左近，鄰近；（大氣、海水等的）層，界，境。2. 【解剖學；動物學】（身體的）局部，部位。3. （學問等的）范圍，領域。4. 〈罕用語〉天空。
  1. Properties of the cathode fall region of an electric arc

    電弧陰極區性質的研究
  2. The dust charging associated with the electron beams including the secondary emission of dust can dominate the dust surface potential in the close cathode region. in this case, dust of the same size can levitate at two different positions in the cathode

    另外還發現：在考慮極板有強電子束發射和塵埃粒子本身的二次電子發射時，同一大小的塵埃粒子能夠懸浮在鞘層中兩個不同的位置。
  3. The results of simulations are : i ) energies of the incident ions to the target are determined mainly by the voltage across the cathode sheath, with a majority of ions " energy vary around the sheath voltage ; ions nearly normally bombard the target ; ions mainly locate above the sputtering holes because of the influence of the magnetic field, and the incident ions mainly come from the region ; the ions undergo several collisions during transportation, but that do n ' t matter much

    主要模擬結果有： ? ）入射離子到達靶面時的能量主要受到了射頻輝光放電中陰極殼層西北工業大學碩士學位論文李陽平電壓的影響，大部分離子的入射能量在陰極殼層電壓值附近，離子濺射時接近於垂直入射;射頻輝光放電受到陰極磁場的影響，等離子體中的離子主要集中在靶面濺射坑的上方，且入射離子主要來自這個區域;入射離子在輸運過程中和背景氣體分子有少量的碰撞，但影響不太大。
  4. The crystal grain boundary of v2o5 films was melted and disappeared as increasing the deposition temperature, and the crystalline v2o5 films can be obtained by deposition at > 300. these films showed excellent cathode and anodic electrochromic performance at different wavelength region

    而襯底溫度升高促進薄膜晶體顆粒長大、熔結，晶粒邊界消失，在較高襯底溫度（ 300 400 ） ，得到連續的結晶性能良好的v _ 2o _ 5薄膜。
  5. In simulations, all important phenomena, such as non - neutral sheath widening near cathode, cathode electron emitting, current channel migrating to the load side of the plasma, ion accelerating toward cathode and magnetic insulation of cathode emitting electrons etc, have been observed and depict the internal physics of this device. also presented is the influence of cathode emitted electrons on phenomena in the conduction processes of pegs. the simulation results show, without cathode emitted electrons, rapid magnetic field penetration takes place only in region near the cathode, with cathode emitted electrons, magnetic field penetration takes place in all plasma region

    診斷發現了陰極表面非中性鞘層的形成、陰極電子發射、電流通道的漂移、等離子體離子加速以及陰極電子磁隔離等物理現象，揭示了這一斷路器件的物理機制；分析了陰極電子對peos導通過程中的物理現象的影響，模擬結果顯示：忽略陰極電子作用，磁場滲透現象主要出現在陰極表面區域，考慮陰極電子作用，磁場滲透現象出現在整個等離子體區域。
  6. On the base of the study on sige material physics characteristic, sige / si hetero - junction characteristic, we dissertate the advantage of sige / si hetero - junction power diodes and establish more accurately physical models and propose two novel kinds of fast and soft recovery p + ( sige ) - n - - n + hetero - junction power diodes : the one is p + ( sige ) - n " - n + diode with the multiplayer gradual changing doping concentration in the n - region, and the other is p + ( sige ) - n " - n + diode with ideal ohmic contact on the cathode interface

    本文針對sige材料的物理特性、 sige si異質結特性建立了準確的物理參數模型。在詳細論述了sige si異質結功率二極體良好特性的基礎上，提出了兩種快速軟恢復sige si功率二極體新結構： n ~ -區採用多層漸變摻雜和陰極側採用理想歐姆接觸。
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