chamber crystal 中文意思是什麼
chamber crystal
解釋
鉛室結晶-
P36 gas furnace ; combustor ; sit valve chamber ; pulse ignition ; ceramic simulation wood ; simulation ceramics ashes, straight safety mini crystal ceramics glass ; flame regulator
P36天然氣爐體; ；燃燒室； sit閥體；脈沖點火器；陶瓷模擬木材；陶瓷模擬灰燼，平直微晶陶瓷安全玻璃；火焰調節器。 -
P33 - ng3 north american standard gas furnace ; combustor ; sit valve chamber ; electric pressure ignition ; ceramic simulation wood ; simulation ceramics ashes, safety mini crystal ceramics glass ; flame regulator
Ng3北美製式天然氣爐體；燃燒室； sit閥體；壓電點火器；陶瓷模擬木材；陶瓷模擬灰燼，微晶陶瓷安全玻璃；火焰調節器。 -
P48 - ng north america natural gas furnace ; combustor ; sit valve chamber ; pressure ignition ; ceramic simulation wood ; simulation ceramics ashes, straight safety mini crystal ceramics glass ; flame regulator
Ng北美製式天然氣爐體; ；燃燒室； sit閥體；壓電點火器；陶瓷模擬木材；陶瓷模擬灰燼，平直微晶陶瓷安全玻璃；火焰調節器。 -
Crystal mixing chamber
晶體混頻腔 -
The second harmonic produced by a q - switched nd : yag laser with wavelength e = 532 nanometers ( nm ), pulse width 0 nanoseconds ( ns ) and repetition frequency i = 1 hz was used to bombard a highly pure solid hexagonal bn ( h - bn ) target ( 96 % ), with diameter of 2cm. in a vacuum chamber, boron nitride ( bn ) film was deposited on the single - crystal silicon substrate
利用高能脈沖激光（波長= 532nm ，頻率= 1赫茲，脈寬= 10納秒）在常溫下轟擊燒結的高純六方氮化硼（ h - bn ）靶，在真空反應室中將bn薄膜沉積在單晶硅基底上。 -
In this paper, the operation principle of the oscillator is analyzed first, from the point of view of theory the designs of crystal resonator and its equivalent circuit, crystal oscillator and thermostatic chamber are defined. the noise model of circuit is used to analyze key factors influencing phase noise of the crystal oscillator, in order to control phase noise of the crystal noise from the very beginning of the design
本文首先分析了振蕩器的工作原理，從理論的角度闡明了晶體諧振器及其等效電路、晶體振蕩器和恆溫箱的設計，利用電路的噪聲模型來分析影響晶體振蕩器相位噪聲的關鍵因素，從設計就開始控制晶振的相位噪聲，為更好地實現課題的目標打下良好的基礎。 -
In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。 -
The synthesis of a single - crystal, ultra - long, uniform lead oxide nanowires were observed in a high vacuum chamber with the electron beam bombard in the tb doped pt thin films derived from sol - gel process
在高真空環境中用高能量電子束對pt t薄膜進行蒸發這種全新的方法，制備出直徑在6 60nxn之間、長徑比高達100的筆直pbo單晶納米線。
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