charge interface 中文意思是什麼
charge interface
解釋
帶電界面-
Secondly the major mechanisms of degeneration of pcss are caused by both the filamentary nature of the current in high - gain pcss damage to the chip of the switch and the charge domain reached the anticathode causes the erosion of metal interface
開關退化的主要原因是:開關體內的絲狀電流對開關晶元的損傷;以及電荷疇到達陽極時來不及放電而產生的電荷擁擠現象對開關電極接觸表面的損壞。 -
In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers
本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。 -
During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss
在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。 -
Interface charge has a profound influence on the breakdown voltage of flr structure. on severe condition it can make the outer flr far from main junction disfunction
界面電荷對場限環終端結構的擊穿電壓影響很大，嚴重的甚至可以使遠離主結的場限環失去作用。 -
Using two - dimensional numerical simulation software, analyze the affect of isolated - trench ' s parameters on the breakdown voltages of three - class bipolar power devices ( whose ideal breakdown voltages correspond to 40v, 70v and 100v ), which include width, depth, isolated material ' s dielectric constant, fixed interface - charge and field plate located at the top of deep - trench termination
利用二維數值模擬軟體分析了影響三類典型應用的雙極功率器件（對應的理想擊穿電壓bv _ （ cro ）分別為： 40v ， 70v ， 100v ）擊穿電壓的諸多因素（主要包括阱寬度、阱深度、阱內填充介質、界面固定電荷、阱區頂端場板） 。 -
Charge qs was located near the interface of silicon and oxide. with more charge, the field of buried oxide was improved up to the critical breakdown field basis on entirely continuity of electric displacement vector, and then the vertical breakdown voltage was raised. the comparisons between analytical and simulative results proved its availability of this model to interpret the vertical blocking mechanism
該模型認為，將界面電荷qs引入i層si / sio2的si界面，根據電位移矢量的全連續性，界面電荷qs越多，使i層內電場增加，直至sio2的臨界電場，從而提高縱向擊穿電壓vb . v ，很好得解決了器件的縱向耐壓問題。 -
The interface behavior between essence and ethylene - vinyl acetate copolymer pallets was studied so that necessary data were obtained to guide the preparation of fragrant masterbatch. the adsorption type and wettability between essence and the copolymer pallets were analysed by measurements of fourier transform infrared spectrum, surface tension, contact angle and specific surface area. the technical factors affecting absorptivity such as the charge ratio, temperature, pressure and stirring speed were studied by series of adsorption experiments. the results showed that the adsorption of essence on the surface of ethylene - vinyl acetate copolymer pallets is physical in nature. essence couldn ' t moisten the surface of ethylene - vinyl acetate copolymer pallets absolutely, but it could be soaked into the surface of the pallets partly. adsorptivity could be increased by enhancing the temperature, pressure and stirring speed, but the extension of adsorption time had little influence on adsorptivity
研究了香精與乙烯/醋酸乙烯共聚物粒子之間的界面行為，以便為香型母粒的制備提供必要的理論依據.利用傅立葉變換紅外光譜、表面張力、接觸角及比表面面積等測定手段，分析了香精與載體之間的吸附類型和潤濕作用.並通過一系列吸附實驗，討論了配料比、溫度、壓力、攪拌等工藝條件對吸附量的影響.結果表明，香精在乙烯/醋酸乙烯共聚物粒子表面的吸附為物理吸附；香精無法完全潤濕載體粒子表面，但可以對其形成部分浸潤；提高溫度、壓力、攪拌速度可以增加吸附量，而延長吸附時間對增加吸附量貢獻不大 -
Abstract : the interface behavior between essence and ethylene - vinyl acetate copolymer pallets was studied so that necessary data were obtained to guide the preparation of fragrant masterbatch. the adsorption type and wettability between essence and the copolymer pallets were analysed by measurements of fourier transform infrared spectrum, surface tension, contact angle and specific surface area. the technical factors affecting absorptivity such as the charge ratio, temperature, pressure and stirring speed were studied by series of adsorption experiments. the results showed that the adsorption of essence on the surface of ethylene - vinyl acetate copolymer pallets is physical in nature. essence couldn ' t moisten the surface of ethylene - vinyl acetate copolymer pallets absolutely, but it could be soaked into the surface of the pallets partly. adsorptivity could be increased by enhancing the temperature, pressure and stirring speed, but the extension of adsorption time had little influence on adsorptivity
文摘:研究了香精與乙烯/醋酸乙烯共聚物粒子之間的界面行為，以便為香型母粒的制備提供必要的理論依據.利用傅立葉變換紅外光譜、表面張力、接觸角及比表面面積等測定手段，分析了香精與載體之間的吸附類型和潤濕作用.並通過一系列吸附實驗，討論了配料比、溫度、壓力、攪拌等工藝條件對吸附量的影響.結果表明，香精在乙烯/醋酸乙烯共聚物粒子表面的吸附為物理吸附；香精無法完全潤濕載體粒子表面，但可以對其形成部分浸潤；提高溫度、壓力、攪拌速度可以增加吸附量，而延長吸附時間對增加吸附量貢獻不大 -
According to the request of this subject, we have developed the system hardware and software for the slave device and the inspection software running on the pc. in this paper all of the followings is illustrated detailedly, such as the research on the principles of measurement and its realization, three means of water - level measurement that are separately based on photo electricity coder, pressure sensor and potentiometer ; selection of the microchip, we choose an advanced integrated soc ( system on chip ) microchip c8051f021 as the main controller ; realization of signal sampling, processing and its conversion in the mcu ; application of high precision 16 bits adc cmos chip - - ad7705 in our system, designing its interface with the microchip and relevant program ; using a trickle charge timekeeping chip ds1302 in the system which can provide time norm and designing of its i / o interface and program ; additionally, a 4 ~ 20ma current output channel to provide system check - up using ad421. in the system, ad421, ad7705 and the microchip compose spi bus ; to communicate with the master pc, here we use two ways which are separately rs232 and rs485 ; moreover, there are alarm unit, keyboard unit, power supply inspection unit and voltage norm providing unit in the system
針對研製任務的要求，課題期間研製了下位機系統硬體和軟體，開發了上位機監控軟體，其中所作的具體工作包括：測量原理的研究和在系統中的實現，在本次設計中用三種方法來進行水位測量，分別是旋轉編碼器法、液位壓力傳感器法和可變電阻器法；主控晶元的選擇，我們選用了高集成度的混合信號系統級晶元c8051f021 ；實現了信號的採集和處理，包括信號的轉換和在單片機內的運算；高集成度16位模數轉換晶元ad7705在系統中的應用，我們完成了它與單片機的介面設計及程序編制任務；精確時鐘晶元ds1302在系統中的應用，在此，我們實現了用單片機的i o口與ds1302的連接和在軟體中對時序的模擬，該晶元的應用給整臺儀器提供了時間基準，方便了儀器的使用；另外，針對研製任務的要求，還給系統加上了一路4 20ma模擬信號電流環的輸出電路來提供系統監測，該部分的實現是通過採用ad421晶元來完成的，本設計中完成了ad421與單片機的spi介面任務，協調了它與ad7705晶元和單片機共同構成的spi總線系統的關系，並完成了程序設計；與上位機的通信介面設計，該部分通過兩種方法實現： rs232通信方式和rs485通信方式；系統設計方面還包括報警電路設計、操作鍵盤設計、電源監控電路設計、電壓基準電路的設計。 -
This paper briefly introduces the basical principles of finite element method which can be used for analysis of vehicles structure, describes the principles and methods of design optimization for vehicles structure parameters, establishes the finite element models of semi - dragging trucks, which is used to load cement dispersedly and container semi - dragging trucks, applying the ansys software, calculates the static strength, then proves the calculation results to be accurate by means of non - electric charge surveying experiment. at the same time, the author puts forward the model and methods of optimization design for structure parameters of vehicle frames, exploits the applied software of semi - dragging trucks, does optimization design. analyzes the feasibility of the optimization results, then gives the structure improve direction. besides this, the author has had initiative research about interface software, etc
本文簡要介紹了可用於汽車結構分析的有限元法的基本理論，闡述了汽車結構參數優化設計的原理和方法，建立了散裝水泥罐式半掛車和集裝箱式半掛車車架的有限元計算模型，利用有限元軟體? ansys進行了強度分析，並對罐式半掛車通過電測試驗驗證了計算模型和計算結果的正確性；論文還提出了半掛車車架結構參數優化設計的模型和方法，開發出了半掛汽車的結構優化設計軟體，調用了ansys軟體對其進行了優化設計，分析了優化結果的可行性，並給出了該半掛車的結構改進的方向。 -
The responses with the step or impulse disturbances of key process variables such as reaction temperature, pressure and feed charge are given and the agreements between dynamic model calculation and static model calculation are satisfactory. 6. the process simulation and optimization software with graphic user interface ( gui ) is developed with matlab language based on matlab platform
浙江大學博士學位論文6 .在matlab平臺上開發了基於圖形用戶界面的專用重整模擬優化軟體，利用一套半再生重整工業裝置和兩套連續重整工業裝置數據對建立的過程模型進行了驗證，表明了模型的有效性和應用方便性。 -
The peripheral circuit includes charge and discharge circuit of permanent magnetic actuator ( pma ), extended circuit of memory, interface circuit of keyboard and display system, and interface circuit of input and output signal
外圍電路包括永磁機構充、放電電路、存儲器擴展電路、鍵盤和顯示介面電路、輸入和輸出介面電路等。 -
Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation
研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。 -
A model of the sic pn junctions irradiated by neutron is presented. the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically
在輻照的電離效應方面，研究了輻照在sicmos氧化層中引入的陷阱電荷對mos溝道反型層遷移率的影響。 -
The main reasons for the enhanced photoconductive properties and the new effects of o - azo / cnts nanocomposites are owing to the increase of the interface area between charge generation material and charge transportation material and the charge transfer from nanoscale o - azo to cnts in o - azo / cnts nanocomposites
然料蕉共平層奮等件碩然鑫的電荷轉移是偶氮/碳納米管納米復合光電導材料體系的光譜響應范圍拓寬和光敏性能顯著增強的主要物理起因。 -
Therefore, the main work of this paper described as followed : on the hardware part, it takes charge of the schematic design of image sensor chip, power, cpld, dsp, memory, and usb2. 0 interface
本文的主要工作如下:在硬體設計方面:系統中圖像傳感晶元、電源、 cpld 、 dsp 、系統存儲器和usb2 . 0介面等部分的設計實現。 -
The distributions of interface charge in the bottom of trenches and electric field in insulation layer were studied for the novel structure. the influences of insulation layer thickness and trench width on breakdown voltage were analyzed and compared with analytical results
利用器件二維數值模擬軟體medici ，詳細研究局域電荷槽內的電荷分佈和埋二氧化硅層的電場分佈，以及埋二氧化硅厚度和槽寬對耐壓的影響。 -
The breakdown mechanism of soi ldmos with located charge trenches was analyzed in this thesis. the interface charge model for the breakdown voltage was proposed
本課題分析具有局域電荷槽結構的soildmos的縱向耐壓機理，提出界面電荷耐壓模型，這是迄今為止所見報道的高壓soi器件理想的新模型。 -
Firstly, the theories relative to radiation effect are discussed in brief, including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices. besides, the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too
首先，對有關輻照效應的理論進行了簡要的敘述，介紹了輻照過程中氧化物陷阱電荷的產生過程以及界面態建立的一些模型，另外，還對低劑量率輻照效應以及bf _ 2 ~ +注入加固mos器件的機理做了回顧。 -
It is found that the surface potential of the negative charge bits are higher than those of the corresponding positive ones. when ferroelectric polarization switching occurs, the potential difference becomes even more remarkable. the origin of this phenomenon traced to the existence of internal field within the interface layer which is near the ferroelectric / electrode interface
研究發現pzt薄膜表面的電荷沉積與薄膜-底電極界面層內部的界面電場存在密切聯系，由此我們建立了一個界面電場模型，定性地解釋了pzt薄膜表面電荷沉積的非對稱現象。
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