charge trap 中文意思是什麼

charge trap 解釋
電荷捕獲
  • charge : vt 1 填；裝（子彈）；充（電）；使飽和；使充滿；堆積，裝載。2 命令；促；諭示，指令。3 責備；告誡。...
  • trap : n 1 （捕動物的）捕獸機，夾子，陷阱；圈套，詭計。2 靶鴿發射器；射球戲；（射球戲用的）鞋形射球器。3...
  1. Space charges is often created by trapping or preventing their movement due to various traps, as a result trap properties decide the store and transport of the charge

    空間電荷往往是各類陷阱俘獲和阻止電荷運動造成的，陷阱的性質決定著電荷的存貯和輸運。
  2. We present a charge - transport model of the photorefractive effect with two deep traps ( two deep - trap model ) based on one deep - trap model and shallow - deep - trap model. we also found dark decay behaviors which accord with the two deep - trap model in the two - beam interference experiments. the fast decay - time constant of the space - charge field is obtained as 714s

    此外，在ce ： batio _ 3雙光束干涉光折變光柵的暗衰減實驗中，也觀察到了符合雙deep模型的衰減現象，得到光折變空間電場快衰減時間常數714s ，約12分鐘。
  3. The experimental results show that the surface charging is related with the pre - flashover events, the pre - flashover events can bring the change of surface charge distribution. these may be attributed to the micro - discharge caused by the traps in insulator. the charge carriers can be captured by traps, a space electric field will be set up by the trap centers, and the combined electric field may exceed the breakdown electric field of local area, then the micro - discharge will be initiated

    分析表明，反向預閃絡現象與材料的陷阱分佈有關，試樣中電極附近的陷阱中心俘獲載流子后所形成的空間電場的作用是產生這一現象的原因；預閃絡現象和表面帶電現象都是由於絕緣子表面陷阱中心俘獲載流子形成空間電場造成局部場強過強引發的局部放電形成的。
  4. Sppc grating at 790nm mainly attributes to the charge grating in ce - ion deep trap while the fe - ion deep trap contributes more at 532nm wavelength than that at 790nm

    利用該模型分析認為： 790nm激光泵浦時位相共軛光柵主要依賴ce離子深能級，而532nm激光泵浦時fe離子深能級的貢獻比在790nm時大。
  5. Spb - fwm forms the charge grating in fe - ion deep trap, while tir - fwm builds up the charge grating in the ce - ion deep trap

    Spb - fwm形成了fe離子深能級上的載流子光柵，而tir - fwm形成了ce離子深能級的載流子光柵。
  6. Due to different trap depths, physical reactions and chemical reactions, space charge in frp rod materials had different polarities and densities is influenced by temperature evidently, especially between 20 and 40 and between 100 and 120

    由於陷阱深度的不同和物理、化學變化的作用，不同溫度下芯棒材料內空間電荷的積聚極性和積聚量不同，特別是在20和40之間以及100和120之間存在明顯變化。
  7. Firstly, the theories relative to radiation effect are discussed in brief, including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices. besides, the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too

    首先，對有關輻照效應的理論進行了簡要的敘述，介紹了輻照過程中氧化物陷阱電荷的產生過程以及界面態建立的一些模型，另外，還對低劑量率輻照效應以及bf _ 2 ~ +注入加固mos器件的機理做了回顧。
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