chemical buffer 中文意思是什麼
chemical buffer
解釋
化學緩沖劑-
This paper mainly discusses the source and chemical components of the oil - tea - cake, as well as the way and important value of its comprehensive utillization. we can extract tea oil and tea saponin, make acid picking buffer - corrodent, active carbon and protein feed from the oil - tea - cake. the producing methods and practical use of these products are presented
本文簡要介紹了油茶餅粕的來源，主要化學成分及其綜合利用的途徑和重要意義，綜述了從茶粕中提取茶油、茶皂素，用茶粕制取酸洗緩蝕劑、活性碳及茶粕用作飼料的生產方法以及這些產品的實際用途。 -
3. polyethylenimine ( pei ), a water - soluble cationic polyelectrolyte, has been extensively used as a deformable and mobile substrate for a biomembrane for it high transfection efficiency of chemical - based delivery systems. what ' s more, pei is good buffer in physiological environment ( ph < 9 )
3 、聚乙烯亞胺（ pei ）是一種陽離子型的聚合物，由於它在動植物細胞內優良的轉染效率，而被廣泛的應用，並且在生理環境下（ ph 9 ）它具有很強的緩沖能力。 -
In the machinery industry, the sodium citrate is widely used for replacing sodium cyaniding to clean the metal surface of heat exchanger metal surface and the chemical pipeline, because of its nonpoisonous, no pollution, high combine performance, it is good buffer and complexing agent in the electroplate industry
在機械造業中，檸檬酸納由於無毒、無污染，高整合性能，因此廣泛用於替代氰化鈉，處理金屬表面熱交器和化工管道的清洗劑，是電鍍工業良好的緩沖劑和絡合劑。 -
Thin sin layers and nitride - based multiquantum well ( mqw ) light emitting diode ( led ) structures with conventional single gan buffer and gan / sin double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition ( mocvd )
摘要以有機金屬化學氣象沉積在藍寶石基板上成長由單一氮化鎵成核層與氮化鎵/氮化矽雙緩沖層所形成的兩種不同氮基礎的多層量子井發光二極體結構。 -
In the present thesis, znse, znte and their quantum well ( qw ) structures on si substrates with zno as buffer layer by low pressure metal - organic chemical vapor deposition ( lp - mocvd ) technique were prepared. zno is selected as the buffer layer for it has many similarities with the oxide layer on the surface of si wafer. all important experimental results and conclusions presented in this thesis are summarized as follows : 1
本文中，我們利用zno與si襯底上氧化層? sio _ x有很好的浸潤性這一特點，採用zno作為緩沖層，用低壓-金屬有機物氣相沉積（ lp - mocvd ）設備在si襯底上生長znse和znte薄膜以及zncdse znse和zncdte znte量子阱結構，並對其發光特性進行了研究，獲得的主要研究結果如下： 1 、在si襯底上獲得了較高質量的zno薄膜。 -
Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades
純的或摻雜的氧化鋯薄膜因其高熔點、低熱導率、高離子導電能力和高溫化學穩定性而受到相當的重視，而且氧化鋯外延薄膜在金屬氧化物半導體（ mos ） 、高溫超導帶材等領域的應用受到越來越多的關注。 -
Chemical analysis of urea for technical use. determination of buffer value
專業用尿素的化學分析.緩沖值的測定 -
The electro - chemical measurement system used to perform dpsv measurement is constructed with two parts, a low - current measurement system consists of low input bias current operational amplifier and a high resolution sar adc and a potentialstat consists of high resolution dac and high current buffer amplifier
對于微分脈沖伏安溶出測量，我們使用高精度高速saradc和低偏置電流運放構成微電流采樣系統，使用高精度dac和高速大電流緩沖放大器設計了恆電位計，並與微控制器共通組成電化學測量系統。 -
In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
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