chemical vapor deposition system 中文意思是什麼
chemical vapor deposition system
解釋
化學汽相沉積系統- chemical : adj 化學的，化學作用的；應用化學的，用化學方法獲得的。n 〈常 pl 〉化學製品；藥品。 fine chemicals...
- vapor : n. 〈美國〉＝ vapour.
- deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
- system : n 1 體系，系統；分類法；組織；設備，裝置。2 方式；方法；作業方法。3 制度；主義。4 次序，規律。5 ...
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Sub - thesis is mainly on the test and research of the photoelectric properties of a - si : h thin film deposited by microwave electron cyclotron resonance chemical vapor deposition ( mw - ecr cvd ) system
本論文主要是對mw - ecrcvd系統沉積的a - si : h薄膜進行了一系列的光電特性的測試研究工作。 -
By the design of microwave electric field mode and microwave mode converter ( mmc ), the thesis participated in equipping an domestic microwave plasma chemical vapor deposition ( mpcvd ) equipment with a quartz glass window and water - cooled stainless steel resonant chamber in 2450mhz / 5 kw, introduced the basic machineries and functions of the sub - systems, including microwave system, gas - route system, vacuum system, detecting system and safeguard system
論文通過微波場型和模式轉換器的設計，參與建立了一套2 . 45ghz 5kw帶有石英玻璃窗、水冷卻不銹鋼諧振腔的微波等離子體化學氣相沉積（ mpcvd ）系統（ mpcvd - 4型） 。論述了包括微波系統、氣路系統、真空系統、檢測系統和保障系統等結構的組成及基本功能。 -
By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia, silicon nitride thin film with excellent anti - reflective and passivation effects was prepared. the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated. the effects of substrate temperature, the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched
實驗表明，氮化硅薄膜的沉積速率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有降低，隨淀積功率增大而明顯增加；在襯底溫度300 ，射頻功率20w和硅烷氨氣流量比為1 ： 3的條件下氮化硅薄膜的沉積速率大約為8 . 6納米分。 -
The research and application of the diamond films were reviewed in this paper, and the nucleations on different substrates in hfcvd ( i lot filament chemical vapor deposition ) system were introduced. the improvement of the diamond nucleation on si, ni, cu was investigated, in order to deposit diamond of high density. the p - n junction between b - implanted diamond films and n - type si substrate was investigated
本論文簡要敘述了金剛石薄膜的研製進展和應用，介紹了用化學氣相沉積法（ hotfilamentchemicalvapordeposition ）在不同的襯底上的金剛石薄膜的制備方法和形核，並對si 、 ni 、 cu三種不同的襯底的金剛石膜研究了如何增大形核密度、提高形核質量。 -
Generic specification of low pressure chemical vapor deposition system
低壓化學氣相淀積設備通用技術條件
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