compound semiconductor 中文意思是什麼

compound semiconductor 解釋
化合物半導體
  • compound : vt 1 使混合，調合，配合；【語言學】復合，合成。2 （通過互相讓步等）解決（糾紛）；用錢了結（債務等...
  • semiconductor : n. 【物理學】半導體。
  1. High purity gallium metal is the basic ingredient for semiconductor compound material, and it is also highly utilized in the manufacture of super conductor material, alloy, alnico etc

    高純度金屬鎵是生產化合物半導體材料的基礎材料，同時它還可以用於生產超導材料、合金材料、永磁材料等。
  2. Binary compound semiconductor

    二元化合物半導體
  3. Cubic boron nitride ( cbn ) is a synthesized wide - band - gap iii - v compound semiconductor and has lots of excellent physical and chemical properties. it has been attracted a nice bit of attention for years because of its application in mechanics, calorifics, optics and electronics

    立方氮化硼（ cbn ）是一種人工合成的寬帶隙-族化合物半導體材料，它有許多優異的物理化學性質，在力學、熱學、光學、電子學等方面有著非常誘人的應用前景，多年來一直吸引著國內外眾多研究者的興趣。
  4. Compound semiconductor materials

    化合物半導體材料
  5. Cadmium zinc telluride ( cd1 - xznxte or czt ) single crystal is one of the three element compound semiconductor materials with great performances used for the detection of x - ray and gamma - ray at room temperature

    碲鋅鎘（ cd _ （ 1 - x ） zn _ xte ，簡寫czt ）單晶體是一種性能優異的三元化合物半導體室溫核輻射探測器材料，具有閃鋅礦型的面心立方結構。
  6. Aln is an important compound semiconductor material with wide band - gap, which has wurtzite structure too. because of their many excellent physical properties, aln thin films were applied in blue - uv emitting materials, epitaxy buffer layer, soi material and saw device with ghz band

    Aln具有許多優異的物理性能，在藍光、紫外發光材料及熱釋電材料、外延過渡層、 soi材料的絕緣埋層和ghz級聲表面波器件等方面有著重要的應用。
  7. Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance. the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention

    Gaas晶體是一種電學性能優越的-族化合物半導體材料，以其為襯底製作的半導體器件及集成電路，由於具有信息處理速度快等優點而受到青睞，成為近年來研究的熱點。
  8. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  9. This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained

    利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。
  10. They have been widely used in optical - fiber communication, satellite communication, super high speed computer, high speed measurement instrument, mobile communication, etc. since gaas is compound semiconductor, it is difficult to achieve high quality gaas crystal

    Gaas器件與電路具有速度高、功耗低、噪聲小、耐高溫、抗輻射等優點，在光纖通信、衛星、超高速計算機、高速測試儀器、移動通信和航空航天等領域中有著重要的應用。
  11. Zinc oxide is a ii - iv wide band - gap ( 3. 37ev ) compound semiconductor with wurtzite crystal structure

    氧化鋅（ zno ）是一種具有六方結構的的寬禁帶-族半導體材料，室溫下能帶帶隙eg為3 . 37ev 。
  12. Zinc oxide is a ii - iv wide band - gap ( eg = 3. 37ev ) compound semiconductor with wurtzite crystal structure

    六角纖鋅礦結構的氧化鋅是一種重要的寬帶隙-族半導體材料，室溫下帶隙為3 . 37ev 。
  13. Based on the transferred - electron theory of the iii - v compound semiconductor and the research on the lock - on effect of the si - gaas pcss ' s, this paper proposes the monopole charge domain model similar to the guun or high - field domain to explain the peculiar switching phenomena occurring in the lock - on mode theoretically

    本文基於gaas等?族化合物半導體的轉移電子理論，結合半絕緣gaas光電導開關中特有的lock - on效應的研究，提出了類似於耿疇（高場疇或偶極疇）的單極電荷疇理論模型，對光電導開關lock - on效應的各種現象給出了理論解釋。
  14. Zinc oxide as a wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature

    寬禁帶zno半導體為直接帶隙材料，具有六方結構，較高的激子束縛能（ 60mev ） ，室溫下帶隙寬度為3 . 3ev 。
  15. Led stands for light emitting diode, a kind of semiconductor which is used to give and receive the electronic signal into infrared rays or light, using the characteristics of compound semiconductor. this is used for household appliances, remote controller, electric bulletin board, various kinds of automation appliances

    它是利用固體半導體晶元作為發光材料，在半導體中通過載流子發生復合放出過剩的能量而引起光子發射，直接發出紅黃藍綠青橙紫白色的光。
  16. Plasma etching has been widely used in the etching process of si devices. now the study is focused on the microfabrication of compound semiconductor

    等離子體干法刻蝕在硅器件的微細加工中已經得到廣泛應用，目前研究的焦點集中在化合物半導體。
  17. 5. a formula is deduced to calculate the built - in voltage of the compound semiconductor

    通過推導，得出一個計算化合物半導體異質結內建電勢的公式。
  18. Zinc oxide is a ii - vi wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure

    氧化鋅（ zno ）是一種具有六方結構的?族寬帶隙半導體材料，室溫下帶隙寬度高達3 . 3ev 。
  19. It is the only one compound semiconductor whose native oxide is sio2. therefore, the sic devices can be manufactured using the technology of the silicon processing, for example mos devices

    Sic是唯一可以氧化生長成sio _ 2的化合物半導體材料，這使得它可以運用si平面工藝條件進行sic器件的製造，特別製作mos器件方面。
  20. Led stands for light emitting diode, a kind of semiconductor which is used to give and receive the electronic signal into infrared rays or light, using the characteristics of compound semiconductor

    半導體技術已經改變了世界，半導體照明技術將再一次改變我們的世界。隨著半導體照明光源在城市景觀商業大屏幕交通信號燈手機及
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