contact band 中文意思是什麼
contact band
解釋
接觸環-
Warm current aerodone : i like flute and have my own electronic instrument band, i am drummer, please contact me uc : 47800406
請與我聯系， uc : 47800406紫林:我是一位新手。 -
A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed
提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。 -
This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters
Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。 -
6 please contact your orthodontist immediately if you encounter severe pain, a loose feeling about teeth, the band drops off, or your brace is damaged
6出現嚴重疼痛，牙齒松動，帶環脫落及矯治器損壞時，應及時請正畸醫生檢查。 -
Again, the electronic effective masses at bottom of lowest - lying conduction band of narrow - gap semiconductor zigzag tubes are inversely proportional to square of their tube - diameters. as for chiral tubes, the electronic effective masses at bottom of lowest - lying conduction band contact with their tube - diameters and chiralities
此外，鋸齒型窄隙半導體管導帶底的電子有效質量與其管徑的平方成反比關系；對于螺旋型管，其導帶底的電子有效質量不僅與管徑相關，而且與螺旋度也相關聯。 -
This work was supported by the state science and technology ministry of the p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. recently, gallium nitride ( gan ) as a wide band gap semiconductor has attracted more and more attention and advanced rapidly, mainly due to its promising applications in short - wave light - emitting devices, photodetectors, as well as anti - radiation, high frequency and high power electronic devices
本碩士論文是基於國家科技部重點基礎研究發展規劃項目（ 973項目）子課題「硅基寬帶隙異質結構材料生長及器件研究」 （ 2000年10月- 2005年9月， no . g20000683 - 06 ）和國家自然科學基金（ no . 60046001 ）的一部分研究工作。
分享友人