critical annealing 中文意思是什麼
critical annealing
解釋
臨界退火-
In this study we focused on the pinning structure, and prepared [ pt / mn ] n multilayer by dc magnetron sputtering system instead of using co - sputtering, by which we wish to find a way to reduce the critical annealing temperature and shorten the annealing time
在我們的課題研究中，我們著重對釘扎層進行了研究，工藝上採用了pt / mn多層膜而不是傳統的共濺射的方法。我們希望通過這種方式能夠發現一條降低臨界退火溫度的途徑，並且能夠縮短退火時間。 -
To better elucidate the following critical problems - - building the rational mathematics model and searching the effective algorithms, this paper sets forth the basis of algorithms and heuristic algorithm. meanwhile it compendiously introduces the main principles of genetic algorithm and the stimulated annealing algorithm, principal parameters during the course of solving problems and vertex coloring theory
為了更好地說明下文所要解決的關鍵問題? ?建立合理的數學模型和尋找有效可行的演算法，本文闡述了演算法和啟發式演算法的理論基礎，並扼要地介紹了遺傳演算法、模擬退火演算法的主要思想和在解題過程中應用的重要參數，以及圖的著色理論；及其在作業計劃編制中應用的可能性。 -
The results indicates that superconducting mgb2 thin films can be prepared by hfcvd in a single - step with the maximum critical transition temperature tc of 36k ; the best critical transition temperature tc of thin films grown by hpcvd in a single - step is 34k. the optimal zero resistance temperature tco of thin films fabricated ex situ is 37 k by post - annealing of precursor b film at 800 for 1 h under high mg vapor pressure
實驗結果表明，用hfcvd法在400原位制備了臨界溫度為36k的mgb2超導薄膜；用hpcvd法在700原位制備了臨界溫度為34k的mgb2超導薄膜；將300制備的前驅物b膜在mg蒸氣中800保溫1h非原位退火，制備了臨界溫度為37k的mgb2超導薄膜。 -
It can reduce power dissipation dramatically. however, the leakage power severely increases because of the low threshold, so a simulated annealing algorithm is presented to adjust threshold in non - critical paths, while the threshold in critical path is still kept low to increase performance. this method can decrease leakage power by 100 times without speed penalty
為了降低等待狀態的漏電功耗，本章提出了一種基於模擬退火演算法的雙閾值調節方法，對關鍵路徑上的器件採用較低的閾值以提高速度，而其餘器件仍然保持較高的閾值以避免過大的漏電流，將該方法應用於iscasbenchmark電路中，可以使漏電功耗基本保持不變，而動態功耗則大幅度降低。
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