crystal silicon 中文意思是什麼
crystal silicon
解釋
結晶硅-
Plasma cyro - etching of high aspect ratio silicon crystal structures
等離子體低溫刻蝕單晶硅高深寬比結構 -
Single crystal silicon is the semiconductor material which is used mostly in the present electronic industry, it play a very important role in the field of aviation - astronavigation, optics, electron and micro - electronics
單晶硅材料是當代電子工業中應用最多的半導體材料，它在航空航天、光學、電子和微電子等領域發揮著十分重要的作用。 -
Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film
薄膜中納米硅晶粒的擇優生長 -
It was found that nitrogen increased the fracture strength of silicon single crystal. we consider that the nitrogen may change the shockley band on silicon surface and form complex to influence the fracture procedure
本文從硅材料的基本概念入手，闡述了硅單晶材料的脆性斷裂、脆塑轉變以及在熱處理過程中的翹曲研究，並通過這三個部分進行實驗。 -
The results reveal that the single - crystal silicon carbide films with smooth and continuous apperance are obtained under the reported experimental conditions
結果表明，在藍寶石復合襯底上可以生長出均勻連續的sic單晶薄膜。 -
Testing of materials for use in semiconductor technology ; detection of crystal defects and inhomogeneities in silicon single crystals by x - ray topography
半導體工藝使用材料的檢驗.第1部分:用x射線外形測量 -
The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth
用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。 -
Standard slice of single crystal silicon resistivity
硅單晶電阻率標準樣片 -
Further more, silicon is advantageous as the material of industrial temperature sensors, since its fabrication and processing techniques are well known. a novel method that get a 10um - 20um layer of single - crystal silicon as the temperature sensitive material and design transmitted configuration is presented
論文在理論分析單晶硅透射特性的基礎上，提出了以微細加工各向異性腐蝕深槽的工藝方法，獲得10um 20um的單晶硅感溫薄膜，並採用透射式傳感結構。 -
( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels
胡勁松河北師死大學碩士學位論文（ 3 ）利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜，並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料，考察了這種納米級硅陽極的儲鉀性能和充放電過程，分析了材料結構對其儲理行為的影響；另一方面，利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素，考察了鉀點綴對多孔硅自身結構，及至性質所帶來的影響，提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。 -
Ingot - a cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut
晶錠-由多晶或單晶形成的圓柱體，晶圓片由此切割而成。 -
Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system
該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。 -
The second harmonic produced by a q - switched nd : yag laser with wavelength e = 532 nanometers ( nm ), pulse width 0 nanoseconds ( ns ) and repetition frequency i = 1 hz was used to bombard a highly pure solid hexagonal bn ( h - bn ) target ( 96 % ), with diameter of 2cm. in a vacuum chamber, boron nitride ( bn ) film was deposited on the single - crystal silicon substrate
利用高能脈沖激光（波長= 532nm ，頻率= 1赫茲，脈寬= 10納秒）在常溫下轟擊燒結的高純六方氮化硼（ h - bn ）靶，在真空反應室中將bn薄膜沉積在單晶硅基底上。 -
The young ' s modulus, shear modulus and bending strength of single crystal silicon are characterized by the balance approach, too. a simplified relative uncertainty transfer equation is obtained by introducing the appropriate non - dimensional factor into the expression, thus providing more convenience to the practical evaluation of the resultant uncertainty
理論上引入適當的無量綱因子，簡化函數的表達，給出了天平法測量楊氏模量和剪切模量相對誤差傳遞函數的解析表達式，並在此基礎上討論了天平法測量楊氏模量和剪切模量中相應誤差的影響。 -
It is found that the great cracks on the coarse surface are initiated easily than on the smooth surface by the sem observation and the crack size obtained at the dynamic indentation experiment is bigger than at the static indentation experiment under the same load. it is showed the single crystal silicon is easier to initiate the crack and fracture under dynamic load, the single crystal silicon ’ s
然後通過sem觀察單晶硅試件表面壓痕形貌，發現粗糙表面比光滑表面容易生成大裂紋，在相同載荷作用下單晶硅材料在動態壓痕試驗得到的裂紋要大於在靜態壓痕試驗得到的裂紋，表明在動態加載條件下單晶硅材料更容易生成裂紋和破碎。 -
In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。 -
So chipmakers now routinely deposit a thin, defect - free layer of single - crystal silicon on top of each wafer by exposing it to a gas containing silicon
因此晶片製造商現在通常會將每塊晶圓暴露在含矽的氣體中，在其表面上沉積薄薄一層沒有缺陷的單晶矽。 -
Then, a micro - machined array of optical pressure sensor has been discussed ; each sensor element in the array consists of a fabry - perot etalon fabricated from single - crystal silicon ; sensor ' s performance has been increased through improved the structure, and can makeup the arrays which be suitable for the smart - skin
其次，本文對一種傳統的法布里一帕羅標準具型光纖壓力傳感器（該傳感器陣列的每一單元均由單晶硅製造而成的法布里一怕羅標準具組成）進行了結構設計和性能分析。 -
The development of solar cells is showing a tendency to improve efficiency and reduce cost. crystal silicon solar cells are considered the most promising cells in the future for their advantages, such as high efficiency, great stability, simple processing, and none - pollution
主要工作包括三個部分：首先研究了不同溫度的熱退火對于矽片氧碳含量和少子壽命的影響，然後將熱處理過程應用於常規太陽電池的制備工藝，制出太陽電池。 -
Ultralong single crystal silicon nanowires synthesized by chemical vapor deposition
超長單晶硅納米絲的化學氣相沉積法制備
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