crystal wafer 中文意思是什麼

crystal wafer 解釋
晶體片
  • crystal : n 1 結晶，（結）晶體；晶粒；水晶（＝rock crystal）；石英。2 【無線電】晶體。3 結晶玻璃；雕玻璃；...
  • wafer : n 1 薄脆餅；薄餅一樣的東西；【物、無】圓片；薄片；晶片；【醫學】糯米紙〈包藥用的干糊片〉。2 （封...
  1. Upon its establishment tera xtal managed to recruit the top technical personnel in crystal growth and wafer processing fields. their first mission was to manufacture the lithium tantalate crystal substrate for the rf saw filters used in the wireless applications

    凝聚國內長晶及晶圓加工等技術第一流菁英共同組成的經營團隊投入創業，半年來最主要的課題就是在最短的時間內生產出無線通訊器材內射頻表面聲波濾波器
  2. Our extensive wafer manufacturing expertise qualifies us to provide wafer sub - contract services for a wide variety of crystal materials. ingot slicing and grinding, wafer lapping and polishing are process we can provide on a sub - contract basis

    我們淵博的晶圓製造專業為晶體材料同業提供多種晶圓代工服務。項目包括晶棒切割與成型、晶片研磨與拋光。
  3. Test method for sub - surface damege of gallium arsenide polished wafer by x - ray double crystal diffraction

    砷化鎵拋光片亞損傷層的x射線雙晶衍射試驗方法
  4. The liquid encapsulated czochralski technique for growing gaas is receiveing considerable attention because it is capable of producing, at reasonable cost, large diameter semi - insulating gaas has a use in the production of gaas integrated circuits, and for this application it must have uniform properties over the whole area of a wafer cut from a grown crystal

    目前，液封直拉技術生長gaas單晶獲得了廣泛關注，因為它能夠以合理的成本生產大直徑的半絕緣單晶。半絕緣材料是生產集成電路等微電子器件的良好材料，而這種應用就要求整個晶片具有很高的均勻性。
  5. Tantalum lithium ( litao3 ), a novel single crystal material, developed and industrialized with the development of communication and information industries recently, owns the excellent performances such as high mechanical - electrical coupling coefficient, lower wear - resistance, excellent high - temperature stability, excellent high - frequency capability, etc. however, researches on tantalum lithium single crystal wafer around world are still lacking

    鉭酸鋰是近年來隨著通訊、信息產業迅速發展而開發並產業化的新型光電子材料。它具有機電耦合系數大、低損耗、高溫穩定性、高頻性能好等優良的壓電、電光和熱電性能。
  6. The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth

    用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。
  7. The simplest reason is that transistors are fastest and most reliable only when formed from the perfectly aligned atoms of a wafer cut from a single crystal of silicon

    最簡單的理由是，唯有在原子排列整齊的矽單晶上所做成的電晶體，速度才快，功能才穩定。
  8. With the development of the growth skill craft of gaas single crystal, the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too, so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material. so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon

    隨著單晶生長技術的發展，通過退火，由於si - gaas中理論化學配比偏離， el2濃度可被控制在1 1 . 5 10 ~ （ 16 ） cm ~ （ - 3 ） ，且分佈均勻。因此碳的分佈就成為決定si - gaas材料電阻率均勻性的一個關鍵因素。所以，研究碳微區均勻性就顯得非常重要。
  9. With the existing condition, the bar waveguide on the lithium niobate wafer with liquid phase proton - exchanged method has been fabricated and the benzoic acid is used as the proton source. a series of research on the domain inversion in lithium niobate crystal with proton - exchanged method have been done. and then the operation and the process of domain inversion in lithium niobate crystal with proton - exchanged method has been used

    實驗方面，利用實驗室現有條件，在鈮酸鋰晶片上以苯甲酸為質子源，用液相質子交換法製作了條形波導;對用質子交換法實現鈮酸鋰晶體疇反轉進行了一系列實驗研究，在此基礎上提出了質子交換法實現鈮酸鋰晶體疇反轉的工藝過程，實現了疇反轉並腐蝕得到了v型槽;設計製作了帶尾纖的電光相位調制器，最後進行封裝。
  10. So in one hand it requires the wafer ' s diameter to be more large in order to enhance the productivity, and on the other hand it puts forward more strict requirement about the crystal perfection and electricity character. especially the electronic character and the equality of micro - area in the crystal wafer has become the key factor to determine whether the device can be made on it or not. so the resistivity measurement of micro - area become one most important procedure in the chip machining. to ensure the produce quality of chip and the perfect performance of final production, the four - probe testing technology need to be deeply studied

    圖形日益微細化，電路尺寸不斷縮小，目前ic製造以8英寸、 0 . 13 m為主，預計在2007年左右將以12英寸、 65nm為主，這一方面要求圓片直徑不斷增大以提高生產率，另一方面對晶體的完美性、機械及電特性也提出了更為嚴格的要求。特別是微區的電學特性及其均勻性已經成為決定將來器件性能優劣的關鍵因素。因此，微區電阻率的測試成為晶元加工之中的重要工序。
  11. ( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels

    胡勁松河北師死大學碩士學位論文（ 3 ）利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜，並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料，考察了這種納米級硅陽極的儲鉀性能和充放電過程，分析了材料結構對其儲理行為的影響；另一方面，利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素，考察了鉀點綴對多孔硅自身結構，及至性質所帶來的影響，提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。
  12. Our sapphire wafer products can be manufactured according to customer specifications. wafer thickness, diameter up to 6 inches, crystal orientation, surface finishing and secondary flat can be customized upon request to suit a variety of commercial applications

    我們可以因應客戶特殊需求，提供不同的厚度、晶面方向、拋光要求及次平邊等客制規格產品，甚至直徑達6英寸的精準平行度晶圓，以滿足多種產業應用的需求。
  13. This paper mainly accomplished the following research : summarize the classify and application fields of four - probe testing technology ; take the square four - probe testing technology study by using the advantage of rymaszewski method in auto - eliminating the portrait wandering influence to induct ry method to square - probe testing method ; deeply study the influence of probe wandering to progressed ry method testing result ; complete the design of testing panel and testing circuit, realize the auto - testing of mono crystal wafer ; discuss the image enhancement and threshold selection problem in image identify, and finally accomplish the identify of probe pinpoint. the main new view points of the research : 1. it is the first time for applying image manipulation and analysis technique to the sheet resistance measurement, and achieving the auto - location function of the probe

    為此，本文開展了以下研究工作：綜述了四探針技術的分類以及應用范圍；對方形四探針測試技術進行了研究，利用rymaszewski法自動消除探針縱向游移影響的優點，將它應用於方形探針測試法中，並對探針游移對改進rymaszewski法測試結果的影響進行了深入探討，提出了用圖像識別技術監測測試進行的方法；完成了測試系統的測試平臺以及測試電路的設計，研製出具有圖像識別功能的斜置式方形探針分析儀一臺，實現了矽片電阻率測試的自動化；對圖像識別過程中涉及到的圖像增強和閾值選擇問題進行了論述，最終實現了對探針針尖的圖像識別以及探針測試結構的自動調整，保證了方形探針測試儀的測試精度。
  14. Our wafer manufacturing capability is not limited to the crystal materials of our products

    當然，我們晶圓成型的量產能力並不拘限於上述的幾種晶體材料。
  15. The technical breakthroughs in growth of nd : cngg had been made. in particular, continuous laser operation was achieved from nd : cngg pumped by ld. when the crystal wafer was end - pumped by one bar of ld with 807nm wavelength, the cw laser output power of 123. 1 mw was obtained with slope efficiency of 22. 3 %

    本論文用自動化熔體提拉技術成功生長出< 111 >方向的直徑25mm以上，長度80mm以上的平界面無核心nd : cngg單晶，確定了晶體結構和物相，測量了晶體的光譜性能，晶體消光比達到34db ，晶體生長技術有新的突破，實現了連續激光運轉，用單支807nm半導體激光二極體端面泵浦該晶體片子，在國內首次獲得123 . 1mw的1 . 062 m連續激光輸出，斜效率達22 . 3 % 。
  16. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  17. Design of the measurement and control system of quartz crystal wafer sorting machine in a - network

    網路石英晶片自動分選機測控系統設計
  18. The most significant advantages of the electrostatic suspension are as follows : ( i ) it keeps the characteristic elegance of the conventional electric suspension methods mentioned above ; ( ii ) it is capable of realizing electrostatic levitation of conductors, semi - conductors and non - conductors, such as the liquid crystal display ( lcd ), the compact disk ( cd ), the silicon wafer and so on ; and ( iii ) it provi des the possibility of implementing non - contact conveying or manipulation of precision objects on the basis of suspension

    利用該懸浮方法可以廣泛實現導體（如金屬片） 、半導體（如硅wafer ） 、常規絕緣體或電介質（如lcd片、 cd片、玻璃片、紙片）等懸浮，進而對其進行非接觸的無損操作。與常規電懸浮和磁懸浮相比，靜電懸浮的突出優點是不受懸浮體的磁性和導電性的制約，因而應用領域更加廣闊。
  19. So chipmakers now routinely deposit a thin, defect - free layer of single - crystal silicon on top of each wafer by exposing it to a gas containing silicon

    因此晶片製造商現在通常會將每塊晶圓暴露在含矽的氣體中，在其表面上沉積薄薄一層沒有缺陷的單晶矽。
  20. Shortly followed, we successfully designed and assembled our complete " end to end " wafer production line including crystal growth, wire slicing, lapping, etching and polishing processes

    緊接著即建構好銜接完整的晶圓加工生產線（由長晶、線切、研磨、拋光到超凈包裝） 。
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