current bias resistance 中文意思是什麼

current bias resistance 解釋
偏流電阻
  • current : adj. 1. 通用的，流行的。2. 現在的，現時的，當時的。3. 流暢的；草寫的。n. 1. 水流；氣流；電流。2. 思潮，潮流；趨勢，傾向。3. 進行，過程。
  • bias : n 1 成見，先入之見，偏執，偏見 （opp Impartiality ）; 傾向，嗜好；癖 （towards）。2 （衣服等上面...
  • resistance : n. 1. 抵抗，反抗，抗拒，抵禦；敵對，抵抗力，反抗力，阻力，【生物學】抗病性。2. 【電學】電阻；阻抗；電阻器。
  1. The thesis has done the widespread investigation and study to the domestic and foreign ’ s technologies of analogy low voltage and low power, and analyzes the principles of work, merts and shortcomings of these technologies, based on the absorption of these technologies, it designs a 1. 5v low power rail - to - rail cmos operational amplifier. when designing input stage, in order to enable the input common mode voltage range to achieve rail - to - rail, it does not use the traditional differential input pair, but use the nmos tube and the pmos tube parallel supplementary differential input pair to the structure, and uses the proportional current mirror technology to realize the constant transconductance of input stage. in the middle gain stage design, the current mirror load does not use the traditional standard cascode structure, but uses the low voltage, wide - swing casecode structure which is suitable to work in low voltage. when designing output stage, in order to enhance the efficiency, it uses the push - pull common source stage amplifier as the output stage, the output voltage swing basically reached rail - to - rail. the thesis changes the design of the traditional normal source based on the operational amplifier, uses the differential amplifier with current mirror load to design a normal current source. the normal current source provides the stable bias current and the bias voltage to the operational amplifier, so the stability of operational amplifier is guaranteed. the thesis uses the miller compensate technology with a adjusting zero resistance to compensate the operational amplifier

    本論文對國內外的模擬低電壓低功耗技術做了廣泛的調查研究，分析了這些技術的工作原理和優缺點，在吸收這些技術成果基礎上設計了一個1 . 5v低功耗軌至軌cmos運算放大器。在設計輸入級時，為了使輸入共模電壓范圍達到軌至軌，不是採用傳統的差動輸入結構，而是採用了nmos管和pmos管並聯的互補差動輸入對結構，並採用成比例的電流鏡技術實現了輸入級跨導的恆定;在中間增益級設計中，電流鏡負載並不是採用傳統的標準共源共柵結構，而是採用了適合在低壓工作的低壓寬擺幅共源共柵結構;在輸出級設計時，為了提高效率，採用了推挽共源級放大器作為輸出級，輸出電壓擺幅基本上達到了軌至軌;本論文改變傳統基準源基於運放的設計，採用了帶電流鏡負載的差分放大器設計了一個基準電流源，給運放提供穩定的偏置電流和偏置電壓，保證了運放的穩定性;並採用了帶調零電阻的密勒補償技術對運放進行頻率補償。
  2. The phase structure of different cu - fe thin films were studied by using grazing incidence x - ray analysis ( gixa ). the texture and residual stress of different cu - fe thin films were measured by scan of x - ray diffraction ( xrd ) and 2 scan with different. the thicknesses of different thin films were characterized by means of small angle x - ray scattering ( saxs ) technique. by using atomic force microscope ( afm ) measured surface roughness of thin films. the component of different thin film was characterized by energy disperse spectrum ( eds ) and x - ray fluorescence ( xrf ). the magnetic properties of cu - fe thin films were measured by means of vibrating sample magnetometer ( vsm ). in addition, the giant magnetoresistance ( gmr ) effects of different films were also measured. the original resistance of the film fabricated by a direction - current magnetron sputtering system is directly affected by bias voltage

    利用掠入射x射線分析（ gixa ）技術對不同cu - fe薄膜的相結構進行了研究;利用xrd掃描及不同角度的2掃描對薄膜進行了結晶織構及殘余應力分析;運用小角x射線散射（ saxs ）技術測量了薄膜的厚度;採用原子力顯微鏡（ afm ）觀察了薄膜的表面形貌;運用能量損失譜（ eds ）及x射線熒光光譜（ xrf ）對薄膜進行了成分標定;使用振動樣品磁強計測量了不同cu - fe過飽和固溶體薄膜的磁性能;最後利用自製的磁阻性能測試設備測量了真空磁場熱處理前後不同薄膜的巨磁阻值。
  3. The traditional bandgap reference circuit was improved in the design, which includes the applying of self - bias structure and cascode structure, output of the opamp was used as self - bias voltage, saving bias circuit, and then it was helpful to get low power consumption. through using poly resistance of high value with low temperature coefficient, we reduced the influnce to circuit, if power supply did not change, we must decrease operating current to decrease power consumption, and increasing value of resistor could decrease the operating current efficiently. poly resistance of high value had large value of squared resistor, so we could save layout area

    對傳統帶隙基準電路進行了改進設計，採用自偏置結構和鏡像電流鏡結構，利用運放的輸出電壓作為運放的偏置電壓，節省了偏置電路，降低了功耗;使用低溫度系數的多晶硅高值電阻，降低了電阻溫漂對電路的影響;在電源電壓不變的情況下，為了減小功耗就必須減小工作電流，而增大電阻的阻值能有效地減小工作電流，多晶硅高值電阻的方塊電阻很大，可以節省版圖面積。
  4. The results that increasing of bias current and shunted resistance and lowing critical current and connected inductance can decrease the transmission time are shown ; ( 4 ) a new type of circuit, ladder shape multiplayer jtl. structure is provided by author, thus output signal of rsfq circuits can be amplified before transfer to room temperature electronics system. it has highly gain of amplify relatively and the double peak structure are avoided through decreasing parasitic capacitance

    （ 4 ）針對目前超導與室溫介面電路的電壓放大器存在的「雙峰」和放大增益效率較低的不足，提出了一種全新的階梯式多層jtl電壓放大電路結構，較好的解決了以上的問題，通過初步的模擬分析證實，該電路的構思極負有創新性。
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