current bias 中文意思是什麼
current bias
解釋
電流偏置-
As a mix - mode chip, the application - specific controller including analog signal and digital signal processing block can be applied to receiving, amplifying, processing, controlling signals of pir, and offer a wide application in some fields. in analog circuits, by sub - threshold mosfet, a self - bias current source is presented, which has a high power supply restrain ratio and a complementary to absolute temperature characters
這款晶元是一款數模混合晶元，包括模擬信號處理（含模數介面模塊）和數字信號處理兩大模塊，完整實現對紅外信號的接收、放大、處理、控制，產生有效數字電平驅動繼電器、可控硅等負載，應用於自動燈等多種場合。 -
The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer.
位移電流的機理只對反向偏壓或要維持空間電荷層所需要的非常弱的正向偏壓條件下的電容器才有用。 -
This condition, known as reverse bias, is not conducive to current flow through the junction.
這種叫做反向偏置的狀態不利於電流穿越結。 -
The presence of a large density of contaminant causes anomalous increases in the diode current with increasing reverse bias.
大量沾污也會使二級管電流隨反向偏壓的增加而呈現反常的增大。 -
It was specially pointed out that, when the tail water is constant maximum tide, the computed flood surface is higher than that of nonsteady current, so there is some safety superelevation. underestimation of the roughness will make downward bias to compute along - river surface and bring hidden trouble for flood control. to improve the section can decrease the water level or offset the water rise for increase of floodplains " roughness, but it need much engineering works
特別提出，按照恆定流計算出來的設計水位比非恆定水位具有一定的安全儲備；而對于灘地糙率的低估又會造成設計水位的偏低，給防洪工作帶來隱患；如果利用改進斷面形式來降低水位或彌補糙率增加帶來的水位抬高，需要較大的工程量，所以平時應注意灘面的減糙管理工作。 -
For phonetic signal modulation, if the pass band range of the band pass filter ( bpf ) is 300hz - 3400hz, the anti - noise properties of laser are approximately independent of bias current and parameters of the cavity ; when the pass band range of bpf increases to a certain degree, modulating bias current and parameters of the cavity can improve the anti - noise properties of laser
對語音調制情況，如帶通濾波器的通帶范圍取為300hz - 3400hz ，則激光器的抗噪聲性能基本不依賴于偏置電流和腔內參數；當帶通濾波器的通帶范圍增大到一定程度，調整偏置電流和腔內參數可以實現半導體激光器的高抗噪聲性能。 -
We apply the agrawal ' s theory model of soa, and study the temporal characteristics of the output pulse for input picosecond optical pulses with different sharpness edges passing through a semiconductor optical amplifier, and find that the peak power and the pulse width of the output pulse depend on the input pulse peak power, the sharpness degree of the input pulse edge and the bias current of soa
本文應用agrawal的關于soa理論模型，詳細研究了具有不同陡峭邊沿的皮秒超高斯光脈沖經soa后的時域特性的變化，發現輸出脈沖的峰值功率、脈沖寬度與輸入脈沖的峰值功率、輸入脈沖邊沿的陡峭程度以及soa的偏置電流密切相關。 -
In chapter three, the all sub - circuits including uvlo, current bias, ldo, oscillator, green mode, slop compensation, power limiting, pwm, ovp, blanking time generator, logic controller are designed and simulated. as a result, all of the sub - circuits are satisfied the requirements
本文第三章對集成電路內各個模塊包括欠壓保護、電流偏置、 ldo 、振蕩器、綠色模式、斜坡補償、功率限制、脈寬調制、過壓保護、前沿消隱、邏輯控制電路等進行了設計與模擬，且達到了預定的設計目標。 -
The g2 adjustment is a service or factory level adjustment, normally only done at the factory or at installation, which adjusts the bias current for each tube individually so that they all come on at the same time
每一隻投影管都需要一定量的偏置電流才能夠正常工作，然而，每隻管及其相應的電路參數都會有些差異，因此所需的偏置電流也不太一樣。 -
The bias magnetic field of the bias coil driven by bias current and small signal test current, results in the induced signal of the control coil. the terminal voltage of the control coil is detected by the test circuit. then the signal containing the information of rotor displacement is obtained, from which we can get the dc voltage signal proportional to the rotor displacement through half - wave rectification circuit and low pass circuit. this dc signal is put into a pid controller to get the control signal of the rotor displacement
偏置測試電路向偏置線圈輸入偏置電流和小信號測試電流，兩者產生的偏置磁場在控制線圈產生感應信號，檢測電路檢測控制線圈端電壓並提取含有轉子位移信息的電壓信號，該信號經半波整流電路和低通濾波電路后得到與轉子位移成正比例的直流信號，再由pid控制器轉換為轉子位移的控制信號，最後控制信號輸入功放電路產生控制電流，實現閉環控制。 -
Ppfc working principle, circular current and effects of clamping capacitor are studied in this paper in detail. because of the clamping capacitor, ppfc have some good features compared with ppc : reducing the fluctuate of the input current ; restraining the voltage spike of the power mosfet ; avoiding the bias - magnetic of the transformer
由於箝位電容的加入，相對于推挽電路而言，該拓撲具備了一些獨特的優點：減小了輸入電流的脈動：削弱了開關管的關斷電壓尖峰；有效抑制了變壓器的偏磁。 -
For the demand of output swing, the bias is provided by high - swing cascode current mirrors
為了獲得高輸出擺幅，設計低壓共源共柵電流鏡為運放提供偏置。 -
The photo-current was found to closely follow the eletro-absorption at large reverse bias values.
在很大的反向偏壓下，光電流緊隨著電吸收發生變化。 -
Ion - assisted bombardment and direct current bias were emphasized in charter ii and charter iii respectively on studying how external factor as an assisted avenue can influence the growth of amorphous carbon film
第二章和第三章分別從引入離子轟擊和施加直流偏壓電場兩方面著重研究了外界條件作為輔助手段對非晶碳生長的影響。 -
On the one hand, the design uses low voltage cascode op framework to improve its gain ; on the other hand, it applies self - bias and cascode structure to the whole sensing circuit. by using the improved method, we have successfully obtained low power consumption, low offset, high linear and high psrr ptat current generator under low power supply
在電路設計上一方面改進運放結構，採用低壓共源共柵結構以提高其增益，另一方面整體傳感電路採用自偏置結構和共源共柵電流鏡結構，在低電源電壓下成功設計了低功耗、低失調、高線性度和高電源電壓抑制比的ptat電流產生電路。 -
We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5
研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。 -
Two kinds of nonlinear conduction behavior for polymer based conducting composites can be : one is the irreversibly electrical nonlinearity taking place in extreme conditions owing to application of high voltage or current ; the other one is reversibly electrical nonlinearity occurring in moderate conditions due to application of small bias or current
摘要導電填料復合材料的非線性導電行為可分為兩大類，即在高壓或強電流作用下發生不可逆非線性導電行為，以及在低壓或弱電流作用下的宏觀可逆非線性導電行為。 -
We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures
對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明，在相當寬廣的非共振電子入射能區，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構，共振減弱；對于電子隧穿不同磁壘磁阱構成的雙磁壘結構，無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振，這時的電子可實現理想的共振隧穿.研究同時表明，磁量子結構中存在著顯著的量子尺寸效應和負微分電導 -
( 1 ) a detail analysis of the uncertainties existed in current design codes was carried out, which showed that the uncertainties in the serviceability design method played a major role and these uncertainties might result a bias of 80 %. compared with these, the bias due to uncertainties in the parameters is significantly less
研究表明振動舒適度計算方法的不確定性是高層建築風振舒適度計算不確定性的主要來源，可以導致高達80的計算偏差，與此相比，參數不確定性導致的計算偏差要小很多。 -
In charter iii, the author designed a set of direct current bias and a schematics for measuring signal, by which the character of conduction of the laser plasma in electrical field caused by bias was studied
第三章中本文作者自己設計了一套直流偏壓裝置及信號測量裝置及方案，從激光等離子體在偏壓電場作用下的導通特性測量，研究了偏壓對激光等離子體空間膨脹過程的影響機理。
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