current density 中文意思是什麼

current density 解釋
電流密度, 擴散流密度。

  • current : adj. 1. 通用的，流行的。2. 現在的，現時的，當時的。3. 流暢的；草寫的。n. 1. 水流；氣流；電流。2. 思潮，潮流；趨勢，傾向。3. 進行，過程。
  • density : n. 1. 稠密；濃厚。2. 【物理學】濃度；密度；比重。3. 愚鈍，昏庸。
  1. The overvoltage varies inversely with the current density to some extent.

    超電壓在某種程度上隨電流密度成反比地變化。
  2. Tunneling process is important in the low to moderate current density range.

    在中等及中等以下電流密度下，隧道穿透過程是重要的。
  3. Measure current density by probe method

    電弧的電流密度
  4. Image current image current density

    像電流影像電流
  5. The weight of coating and current density has the direct ratio relation

    電鍍層的量隨著電流密度的增大而增大。
  6. Probability current density

    幾率淋度
  7. Anodic current density

    陽極電流密度
  8. Effect of precursor powder on microstructure and critical current density of - 2223 tapes

    銀超導帶材的顯微結構及臨界電流密度的影響
  9. Study on optimal current density to annealing fe - based amorphous wire by pulse current

    鐵基納米非晶絲脈沖電流退火的最佳電流密度研究
  10. An experimental study on the mechanic behaviors of aluminum foam based on the relative current density

    基於相對即時密度的泡沫鋁材料力學性能研究
  11. Radiation spectrums of relativistic charged particles in a dipolar magnetic field were studied numerically in detail by using the current density of moving charged particles in this paper

    摘要從運動的荷電粒子產生的流密度出發，研究了在地球偶極磁場中運動的相對論性荷電粒子的輻射能量譜，並對其進行數值計算。
  12. The effects of different current density on the alloying element content were discussed. based on the results, the optimal process condition was confirmed : pb ~ ( 2 + ) 80 - 90 g / l sn ~ ( 2 + ) 7 - 15 g / l ch _ 4so _ 3 ( dissociative ) 130 - 150 g / l composite additive 12 ml / l current density 2 - 6 a / dm ~ 2

    採用hull槽實驗方法確定了甲磺酸體系電沉積pb - sn合金鍍層的電流密度范圍，並探討了不同沉積電流密度下pb 、 sn合金含量的變化規律。
  13. 1. the composition and current efficiency of ni - w - b electrodeposit in the bath containing ammonium citrate as complexing agent were related to the deposition current density and bath composition

    在以檸檬酸銨為絡合劑的鍍液中， ni - w - b合金電沉積層的組成和沉積電流效率與沉積電流密度及鍍液的組成等有關。
  14. The method of obtaining high concentration of na2feo4 solution by quick electrolysis mainly contains four aspects : adoption of either a diaphragm or an ionic membrane electrolytic cell in which a thin anodic cell lying between the two cathodes, ( 2 ) using an iron anode that has larger specific surface area, ( 3 ) keeping suitable concentration of naoh in the anodic cell, adoption of lower current density and higher electrolyzing speed. the practical technique parameters follow a s below : the naoh solution of 14 - 16mol / l, the temperature of 303 - 308k, the surface anodic current density of 300a / m2, the unit electrolyzing speed of efficiency larger than 6. 0a / l

    快速電解獲取高濃度na _ 2feo _ 4溶液的方法，主要包括四個方面：採用兩陰極室夾一厚度較小的陽極室的隔膜（或離子膜）電解槽；使用比表面積較大的鐵網陽極；保持陽極室中有適宜濃度的濃naoh溶液；採用較低的電流密度和較高的電解速度。具體工藝參數是： 14 16mol / lnaoh溶液、溫度303 308k 、表觀陽極電流密度300a m ~ 2 、有效單位電解速度6 . 0a / l 。
  15. Current density and electroplating velocity has line relation, but the increscent multiple of electroplating velocity is smaller than that of current density. which indicate that current efficiency decreases with the increase of current density at alcb + lialh4 system. at l - 5a / dm aluminum coating is dense and uniform, especially at 2. 5a / dm

    電流密度與電鍍速度兩者近似成直線關系，但電鍍速度增大的倍數比電流密度增大的倍數要小，說明在alcl _ 3 + lialh _ 4體系中隨著電流密度的提高，電流效率逐漸降低。
  16. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  17. The distributions of current density and potential on the negative plates with the radiational or expanded grid designs are more uniform than those on the positive plate

    輻射式和拉網式負極板在化成開始時電流密度和電位的分佈都比正極板上分佈均勻得多。
  18. Liberation of hydrogen gas would be increased rapidly and sic particles on the surface might be dispersed if the current density exceed the upper limit. furthermore, nickelous hydroxide would be deposited because the ph of plating solution nearby the surface rapidly increased. all of above might result in coating deterioration

    若電流密度過大，超過所允許的上限值，會析出大量的氫氣，可能沖散表面覆蓋的sic微粒，而且易使磨頭表面鍍液ph值急劇上升而形成氫氧化鎳沉澱，導致鍍層質量惡化。
  19. ( 4 ) low current density is better for ni - sic composite plating, the sic particles is nonconductive

    （ 4 ） ni一sic復合電鍍宜使用較低的電流密度。
  20. Value, and the current density and intensity versus the substorm phases. moreover, the characteristics of substorm current wedge are given special attention. it is found that the density and intensity of facs reach their peak during the expansion phase, the onset of the expansion phase is triggered when imf is changed to southward from northward or the southward imf decreases, and the positions of onset are most likely to be at the edge of plasma sheet near the earth

    值分佈以及場向電流強度和密度隨亞暴位相的變化，並著重分析了亞暴電流楔的特徵。結果表明，亞暴膨脹相的場向電流強度和密度都達到極大值亞暴的膨脹相是由行星際磁場轉向或南向分量變小觸發的，其起始位置很可能位於近地等離子體片內邊緣。
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