current voltage equation 中文意思是什麼
current voltage equation
解釋
電流電壓方程-
The main job of this research is : ( 1 ) analyze the operation situation of power system during faults ; pay attention to the traveling wave on the three - phase transmission line ; study the equation of voltage on three - phase transmission line with impedance capacitance coupling between phases ; contact the voltage on any point with the fault voltage, study the singularity of the voltage signal in fault point, and make it to be the base of the new fault detection method ; ( 2 ) apply the singularity detection theory based on wavelet analysis to the power system faults detection, give a complementary criterion to current fault detection criterion, study how to select the basic wavelet, how to filter noise, how to detect the singular point or fault point, and finally give a total solution. the simulations prove it to be a quick, correct and effective fault detection method
本文的主要工作有： （ 1 ）分析電力系統在發生故障時的運行狀態，尤其對三相傳輸線上的故障行波進行了分析和研究，推導了考慮相間耦合的三相傳輸線電壓方程，並將傳輸線上任一點的電壓與故障點電壓建立起聯系，得出了傳輸線上電壓信號在故障點處的奇異性，並以此作為構造新的故障檢測演算法的理論基礎； （ 2 ）將基於小波變換的信號奇異性檢測理論運用於電力系統故障檢測中，針對目前相關研究的不足，提出了電力系統故障檢測判據的補充判據，通過對基本小波的選擇、除噪措施、信號奇異點也即故障點的檢測方法所作的分析，給出了一個可行的解決方案；模擬研究表明：這是一個快速、準確、有效的故障檢測演算法。 -
A linear theory of rbwo with inner - slot coaxial structure is analyzed detailedly, and the equation of dispersive relation is deduced and computered numerically. 4. particle simulation is used in rbwo respective with coaxial and partial structure. in the simulation, the output parameters of rbwo such as phasespace, contour, vector, voltage, current, output power, interaction efficiency and microwave radiation
4 .對同軸和偏心返波管分別進行了粒子模擬，通過改變電壓、電流、電子注位置、磁場等參數來觀察返波管加了內開槽前後相位空間、等位線、矢量、電壓、電流、輸出功率、工作頻率的變化。 -
Physics device model, component structure design and fabrication technology are discussed based on the thorough analysis of strained silicon and soi physics mechanism. the detail contents are as follows. the analytical threshold voltage model, drain current model and transconductance model are derived from poisson ’ s equation for the fully depleted strained soi mosfet
本論文圍繞這一微電子領域發展的前沿課題，在深入分析應變硅和soi物理機理的基礎上，對器件的物理模型、器件結構設計和工藝實驗等問題作了研究，主要包括以下幾部分:首先，從器件的物理機制出發，建立主要針對薄膜全耗盡型器件的閾值電壓、輸出電流和跨導模型。 -
At first, buck - boost circuit is detailed analyzed and derived strictly in the theory, and on the base, the current of the inductance and the output voltage are analyzed elaborately. when the input voltage is the ac voltage with the nomal frequency, the two variable quantity are analyzed and some conclusions are concluded by means of equal length separation methods and introducing function methods and derivative - equation methods. and this is the basis of the next proceeding
首先，對buck - boost電路進行了嚴謹地理論推導，先對buck - boost電路在輸入為直流電壓時的工作情況進行了分析；在此基礎上，對輸入為工頻交流電壓時的電感電流、輸出電壓作了詳細分析，利用等間距離散化方法、引入函數法、微分方程法分別對變量進行了推導和總結，為下一步工作奠定了理論基礎。 -
The sinusoidal voltage and current distribution on the line of each frequency component is obtained by the phasor equation for the transmission line and the source and load impedances
將傳輸線上不同位置電壓及電流之頻譜以快速富氏反轉換即得傳輸線上不同位置之近似電壓及電流脈波。 -
Abstract : the saturation behavior of stress current is studied. the three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation. a further investigation by statistics experiments shows that there are definite relationships among time constant of trap generation, the time - to - breakdown, and stress voltage. it also means that the time constant of trap generation can be used to predict oxide lifetime. this method is faster for tddb study compared with usual breakdown experiments
文摘:基於一階速率方程，討論了恆定電壓應力下應力電流的飽和行為.通過對應力電流的擬合，發現存在三類缺陷產生的前身.更進一步的統計實驗顯示，在缺陷產生時間常數、擊穿時間以及應力電壓之間存在著明確的關系.這意味著缺陷產生時間常數能夠被用於有效預測氧化層的壽命.與常規的氧化層擊穿實驗相比，基於缺陷產生時間常數的預測更快、更有效
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