cut-in temperature 中文意思是什麼

cut-in temperature 解釋
接入溫度
  • cut : vt （cut; cutting）1 切，割，截，斬，砍（樹），剪（發等）；切斷，割下；採伐；剪下；修剪，刈。 I h...
  • in : adv 1 朝里，向內，在內。 A coat with a furry side in有皮裡子的外衣。 Come in please 請進來。 The ...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  1. Recipe : smear over mullet egg with barley wine and baking with high temperature until the appearance become crisp and the inside looks just half done. cut in piece than you can serve. accompany with garlic, you will find it more delicious

    食用方法：表面塗抹高粱酒，以高溫快速烘烤，讓烏魚子外表香脆，內層維持半生熟狀態，切片即可食用，加大蒜一起食用風味更佳。
  2. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  3. By control the adulteration of kmno4 powder in the raw materials, we found the adulteration of kmn04 powder decrease the dosage of easy melted metal mn, and release the hot - trap problem, enhance the diffusion velocity as well as cut down the synthesis temperature and combustion propagation velocity of the system

    320左右體系內sro _ 2分解放出氧氣，並且和空氣中的co _ 2發生反應生成了srco _ 3發生強烈的放熱反應，緩慢的放熱包。 450左右體系內naclo _ 4分解吸熱， shs反應被觸發，反應劇烈，放出大量的熱。
  4. The emphases of our research works are as follows : under ultra - low temperature ( about 0. 236k ) conditions, how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts

    研究的重點為，在甚低溫（ 0 . 236k ）下，通過實驗研究表面聲波的頻率和功率，源漏偏壓等因素對聲電電流的影響;研究準一維電子通道中不同源漏電流與分裂門負偏壓的關系，以找到分裂門的鉗斷點電壓;以及研究聲表面器件叉指換能器的頻率特性等。
  5. First, the frequency - temperature ( f - t ) characteristic of quartz crystal resonator is analyzed. then, the frequency - temperature ( f - t ) characteristic curve of at - cut quartz crystal resonator ( at cut angle : 3 = 0, 1 = 35 6 ) is obtained based on analyzing the christoffel equation describing flexibility sound wave in solids, which serves as the theory basis used for temperature compensated, from which the actual circuit of oscillatory circuit is designed

    首先對石英晶體諧振器的頻溫特性進行分析，然後通過求解描述固體中彈性聲波的christoffel方程，得到其在切角3 = 0 ， 1 = 356處也即at切石英晶體諧振器的頻率溫度特性曲線，這是本文進行溫度補償的理論依據。
  6. Measurement theory of coaxial line phase water cut meter and flowing feature of water oil two - phase flow have been studied in this paper. and it has been found that the response of coaxial line phase water cut meter is not only related to water cut, but also related to temperature, salinity of formation water and flowing characteristics. based on soft - measuring theory and operating theory of the meter, soft - measuring model of coaxial line phase water cut meter has been set up with directly obtainable facts such as flux, temperature of oil and water mixture and salinity of formation water

    本文在對同軸線相位法含水率計的測量機理和油井兩相流動特性研究的基礎上，揭示出同軸線相位法含水率計的儀器響應除了與油井含水率有關之外，而且還與油水混合介質的溫度、地層水礦化度以及兩項流動狀態有關；結合軟測量技術理論和同軸線相位法含水率計本身的測量機理以及與儀器響應有關的可以直接測量的流量、油水混合介質的溫度、地層水礦化度等參數，建立基於同軸線相位法含水率計機理的軟測量模型。
  7. As the temperature of pyrolysis and the soak time increasing, the carbon materials become more stacked, the specific surface area reduces, both reversible capacity and irreversible capacity decrease, the initial coulumbic efficiency increases, and the hysteresis in the voltage profile between charge and discharge is cut down

    隨著熱處理溫度的升高和恆溫時間的延長，所得炭材料的有序化程度增加，比表面積減小，可逆嵌鋰容量與不可逆容量均減小，首次充放電效率增大，電壓滯后現象得到抑制。
  8. Made of shaping polytetrafluoethylene resin into blank by moulding in ordinary temperature, through high heat sintering, then ratary cut

    用聚四氟乙烯燒樹脂在常溫下用模壓法製成坯料，經高溫燒結后旋切而成。
  9. In this paper, we computed and found the main parameter for facture of ti : linbo3 waveguide, by the function of ti diffusion profile in linbo3, and the waveguide mode ' s cut - off condition. the parameters include waveguide width : 8 m, titanium film thickness : 50 ~ 60nm, index change : 0. 006, diffusion temperature : 1050 and diffusion time : 9 ~ 10 hours

    本文從ti擴散特性和波導導模截止條件入手，計算並確定了製作單模ti linbo _ 3波導的主要參數，如：波導寬8 m ， ti膜厚50 60nm ，擴散溫度1050 ，擴散時間9 10h等。
  10. The result indicates that under the condition of temperature sudden drop, the temperature of face slab ' s surface and centre will fall consecutively along with the temperature sudden drop, and the face slab ' s surface temperature drop - cut range will reach maximum ; under this condition, the tensile stress appears in the face slab ' s surface and centre, the maximum principal stress in the face slab ' s surface is larger titan that in the face slab ' s center ; the maximum principal stress in the face slab ' s surface and centre both occurs in the position that the elevation equals approximately to half of the dam ' s height

    結果表明，在氣溫驟降條件下，面板表面及中心的溫度將隨氣溫驟降的發生而持續降低，其中面板表面溫度降幅最大；此時面板表面和中心均出現拉應力，面板表面的最大主應力大於面板中心的最大主應力；面板表面和中心的最大主應力均發生在高程約為壩高一半的位置。
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