density defect 中文意思是什麼
density defect
解釋
密度缺點-
Density of composites was varied with the amount of organic and grain size of ultramicro iron. influence of microstructure on and was discussed with the interface defect mechanism
指出了復合粒子密度的變化是由於有機相含量與超微鐵粒徑的變化引起的，並用界面缺陷的理論探討了微觀結構對與的影響。 -
Spontaneous emission can be totally suppressed or strongly enhanced depending on the relative position of the resonant frequency from the edge of the photonic band gap and the photonic mode density. several novel phenomena can be obtained. the spontaneous emission displays an oscillatory behavior, classical light localization, photon - atom bound state, nonzero steady - state population and anomalously large vacuum rabi splitting. and localized mode associated with a defect site in an otherwise perfect photonic crystals, acts as a high - q micro - cavity
通過原子上能級與光子頻率帶隙邊緣的相對位置或者光子態密度，可以抑制或增強原子的自發輻射。分析並得到了一些奇異的現象，如自發輻射的諧振子行為、光的局域、單光子?原子局域態、上能級中存在非零穩態原子布居數、類似於真空中的拉比頻率分裂等。 -
In the third chapter, the influence of current density, solution concentration, erosion time and aging in ambient air on the pl spectra of ps suggests that peak would blue shift with current density increasing, and with erosion time and aging time prolonging ; with the increasing of solution concentration, peaks would red shift when solution concentration less than 1 : 1 but blue shift when solution concentration greater than 1 : 1. above phenomena can be explained by quantum confinement and light center model, but do not deny the action of si - h bonding and defect on the surface in the process of photoluminescence. at present, radiation mechanism is still one of the primary problems in the study of ps
在第z三章中；通過對比，分析了電流密度、陽極化時間、溶液濃度以及自i然氧化時間對多孔硅光致發光光譜的影響，認為在一定的范圍內，多i孔硅的發光峰位會隨電流密度的增大而藍移，要獲得較強的發光，需z要選擇合適的電流密度；隨著腐蝕時間的延長，多孔硅的發光峰位會i發生藍移；當f酸的濃度較小q ： 1 ）時，峰位隨濃度的增大表現為向i低能移動；而當f酸的濃度較大河山時，峰位隨濃度的增大則表現z為移向高能；多孔硅在空氣中自然氧化；其發光峰位發生藍移，而強i度隨放置時間的延長而降低。 -
The main achievements are as follows : the theory models of defect mfl field are set up ; based on the magnetic dipole model and finite element model, the distribution of defect mfl field is simulated in the dissertation ; the component of flux density ( magnetic filed ) parallel to the surface of pipe is detected by a circumferential array of hall probes ; the factors including defect geometry parameters, defect surface angle and shape, pipe material, field intensity, vehicle velocity, background magnetization, operating pressure and remanent magnetization and so on influence the mfl signal characteristics
採用霍爾元件作為缺陷漏磁檢測傳感器，獲得管道軸截面漏磁場切向分量的漏磁信號；研究了缺陷外形尺寸、缺陷傾角和形狀、管道材質和磁化強度、檢測儀移動速度、管道背底磁場、管內壓力和剩磁對漏磁信號的影響。提出了各通道增益放大、各路漏磁信號偏離調整、波形微分、數字濾波和平滑等漏磁信號預處理方法；分析了等空間采樣的漏磁信號轉換為等時間采樣信號的必要性，研究了漏磁信號的小波去噪方法。 -
From an analytic treatment, the state is determined by the nanotube diameter rather than chirality. the corresponding image of local density of states in real space shows a highly localized state around the defect
然後逐點計算局域態密度發現，在實空間準束縛態是一個非常局域化的效應，離開缺陷即迅速衰減。 -
Spectral correlation density analysis on bearing point defect diagnosis
譜相關密度分析在軸承點蝕故障診斷中的研究 -
The photoelectric property of a - si : h films is closely associated with hydrogen content in films. on the one hand, hydrogen incorporated as monohydride ( si - h ) saturates dangling bonds in films, and on the other hand, hydrogen incorporated as polyhydride ( si - h2, si - h3, ( si - h2 ) n ) introduces defect in films and thus increases the density of localized electronic states in band gap
A - si ： h薄膜的光電特性同膜中的氫存在密切關系，一方面，氫以單氫化合物（ si - h ）方式結合到膜中，從而飽和了膜中的懸掛鍵；另一方面，氫以多氫化合物（ si - h2 、 si - h3和（ si - h2 ） n ）方式結合到膜中，反而在膜中引入了缺陷，使帶隙中的局域態密度增大。 -
By means of chemical etching, microscope observation, eelectron probe x - ray micro - analyzer ( epma ), the micro - distribution of c acceptor defect in lec si - gaas wafer is investigated, the results show that there is serious influence of the density and distribution of dislocations on the distribution of c impurity in wafer
本文通過ab腐蝕、 koh腐蝕，金相顯微鏡觀察，透射電鏡能譜分析，電子探針x射線微區分析，研究了液封直拉法生長的非摻半絕緣砷化鎵（ lec ， si - gaas ）單晶中碳的微區分佈。 -
The defect and interface in sapphire and gan were observed by afm. we found that when the dislocation density in sapphire was lower thanl05 / cm2, the dislocation density in gan was 108 ~ 109 / cm2and not linear with the dislocation in sapphire. the impurity of mo in sapphire and gan was measured by sem xps epma and uvf we found the mo content in sapphire was 10 - 4, and the mo content in gan was lower than ppm. so it was concluded that low - cost mo crucible is viable
用掃描電鏡（ sem ） 、 xps 、電子探針和紫外熒光光譜儀測量了藍寶石襯底和gan外延層中的mo雜質的含量，發現藍寶石襯底中含有mo雜質，含量約為10 ~ （ - 4 ） （質量含量） ；而在外延層gan中沒有檢測到mo雜質，即mo雜質含量小於ppm級。 -
With the development of microelectronic products ( integrated circuit, printed circuit board, etc ) directing to high density, thin separation and low defect ratio, its inspection requirement is higher on aspects of precision, efficiency, universal, and intelligence etc. therefore, this paper researched on the general key techniques in the field of microelectronic products vision inspection, covered the shortage of traditional inspection on aspects of fast and precision locating, image mosaic, and fine defect test, completed theory study on physical dimension and defect inspection of microelectronic products based on machine vision, developed the prototype and used lots of experiments to prove its correctness and feasibility
隨著微電子產品（集成電路晶元、印刷電路板等）向著高密度、細間距和低缺陷方向發展，對其檢測技術在精密、高效、通用和智能化等方面提出了更高要求。由此，本文對微電子產品視覺檢測中的關鍵技術進行研究，彌補了傳統檢測在精確快速定位、圖像全景組合和精細缺陷檢測等方面的不足，最終完成基於機器視覺的微電子產品外形尺寸和缺陷檢測的理論研究和樣機研製，並進行了大量實驗證明其正確性和可行性，力圖為我國自主創新的微電子產品視覺檢測技術提供理論和實際借鑒。 -
Quantitative determination of ab microscopic defect density in gallium arsenide single crystal
砷化鎵單晶ab微缺險密度定量檢驗方法 -
The 0 - 15kev energy slow - positron beam was used to measure the dopple broadening in sio2 / sic. both the s and w parameters clearly showed that the density of defect in sio2 layer had decreased after annealing in n2
利用0 - 15kev的慢正電子多譜勒能量展寬測試sio _ 2 sic的缺陷情況，發現不管是n型還是p型，氧化層附近其s參數經過n _ 2退火明顯減小， w參數在這個部位增大。 -
This paper reviews the recent advances in yeast expression systems used in recombinant protein drugs produced by gene engineering, such as the selection of yeast vector system and yeast expression strain, construction of multi - copy strain, the high yeast cell density culture, the recent situation of yeast system applied in expression gene, defect of yeast expression system and countermeasure, etc
摘要本文主要從酵母載體系統的選擇、酵母表達宿主的選擇、多拷貝菌株的構建、高密度發酵培養酵母細胞、應用酵母系統表達外源基因的研究現狀、酵母表達系統的缺陷及對策等幾個方面綜述了近年來酵母表達體系在基因工程重組蛋白藥物開發方面的研究進展。 -
This decrease in the defect pl intensity is probably caused by the increase of the nonradiative tunneling transition with multiphonon emission because of the increase in the density of si dbs
缺陷pl強度的減小可能是因為隨著sidbs密度的增加，與多聲子有關的，從導帶到懸掛鍵的非輻射通道遷移的增加而引起的。 -
There is a focus on application of the stochastic subspace identification method in this article. for its defect in application of engineering, it also studies auto - cross spectrum density method which is classical in engineering, and it can be used as a supplement
針對隨機子空間法在工程應用中耗時長的不足，本文還研究了工程應用中比較經典的自互譜法，該方法可以作為隨機子空間法的補充。
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