deposited film 中文意思是什麼
deposited film
解釋
沉積膜-
Formation of gan film by ammoniating ga2o3 film on in layer deposited on si substrates
的鋰離子凝膠膜制備與性能 -
The diffusion welding behavior of single - crystalline cu to single - crystalline - aio with a nb film interlayer and the joint microstructure properties were studied by tem, sem / eds analyses and four - point bend testing. the nb film interlayer deposited by electron beam evaporation on the ceramic side prior to diffusion welding was found to be olycrytalline and fiber - textured after diffusion bonding, with the close - packed plane ( 110 ) being parallel to the ( 0001 ) basal plane of - aio
擴散連接技術是一門邊緣科學，涉及材料、擴散、相變、界面反應、接頭應力應變等各種行為，工藝參數多，雖然已經進行了大量的試驗研究，但卻對各種材料的連接機理尚未有明確的認識，為此人們試圖藉助于計算技術，對接頭行為進行數值模擬，以便找到共同規律，對擴散連接過程及質量進行預測與實時控制。 -
This film is deposited on the surface of the glass by evaporating crystals, use of cryolite or magnesium fluoride, in a vacuum.
塗敷薄膜時，通常是將玻璃置於真空之中，然後使冰晶石或氟化鎂晶體氣化，令其沉積于玻璃表面上。 -
The film is deposited on the surface of the glass by evaporating crystals, usually of cryolite or magnesium fluoride, in a vacuum.
塗敷薄膜時，通常是將玻璃置於真空之中，然後使冰晶石或氧化鎂晶體氣化，令其沉積于玻璃表面上。 -
Sub - thesis is mainly on the test and research of the photoelectric properties of a - si : h thin film deposited by microwave electron cyclotron resonance chemical vapor deposition ( mw - ecr cvd ) system
本論文主要是對mw - ecrcvd系統沉積的a - si : h薄膜進行了一系列的光電特性的測試研究工作。 -
And less background gas is incorporated in the deposited film.
而只有較少的本底氣體引進于射薄膜中。 -
Copper has been deposited on surface of the al mmcs as interlayer by magnetron sputtering, tlp bonding of al mmcs with these interlays, the joints shear strength of tlp bonding using deposited film was as much as the joint shear strength of tlp bonding using cu foil. removing the oxidation on the surface before deposition, copper was coated by magnetron sputtering as tlp bonding interlayer
待連接表面通過磁控濺射法沉積銅膜作為中間層進行瞬間液相連接，得到的接頭強度與銅箔中間層進行瞬間液相連接得到的接頭強度相當，而使用磁控濺射法去除待連接表面氧化膜后沉積銅膜作為中間層進行瞬間液相連接的接頭強度提高7 . 6左右。 -
The spray pyrolysis technique has a great application potential to be a method to prepare the economical tin dioxide film for its unsophisticated equipment, low - cost and high deposition rate. in this paper, antimony - doped snoa ( ato ) thin films were deposited onto soda - lime glass by the spray pyrolysis method, using metal salts snch ? 2h2o and sbcls as precursors
噴霧熱分解法以其設備簡單、成本低、制備樣品快等優點成為一種很有應用潛力的制備sno _ 2薄膜的方法，另外噴霧熱分解法在鍍膜玻璃的工業化生產中有著廣闊的應用領域。 -
Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate
在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。 -
The ability of counterion so42 - to improve fc16ab monolayer ' s compressibility is poorer than cl -. with the technology of lb film, the monomolecular film of fc16ab was deposited on to quartz and caf2 with hydrophilic surfaces on ultrapure water subphase, y - type lb film of transfer ratio approaching to 1 is obtained. the lb film is demonstrated with uv - vis, ft - ir spectra
利用lb膜技術將不同亞相上的fc _ （ 16 ） ab單分子膜沉積到具有親水表面的石英基片和caf _ 2基片上，得到轉移比接近1的y -型lb膜，並用uv - vis 、 ft - ir光譜lb膜進行了表徵。 -
The 3d electrons increased with the content of mn doping increasing, and the electrical property increased accordingly as the electron transport path improved. it is confirmed that all the orthorhombic perovskite phase which is formed initially at the heat treatment temperature of about 600c and thoroughly above 850c are observed in the lcmto thin film deposited on si ( 100 ) substrate by rf magneto - controlled sputtering
確認了採用射頻磁控濺射法于si （ 100 ）基板上生長的薄膜至多在600熱處理已開始形成晶相，形成的晶相全部是正交晶系鈣欽礦相，提高熱處理溫度，薄膜中晶相含量相對增大，高於850后晶相基本形成完畢。 -
Abstract : the deposited film with magnesium / polytetrafluoroethylene ( mg / ptfe ) material is produced by physical vapor deposition. the infrared radiation property of mg / ptfe material is tested by using the infrared radiation meter. the results demonstrated that this material has stronger infrared radiation in 1 3 m wave length. it shows that produced infrared radiation pyrotechnic material by physical vapor deposition is feasible
文摘:採用物理汽相沉積法設計製作了鎂/聚四氟乙烯沉積膜材料，並用紅外輻射計對其紅外輻射性能進行了測試，測得該材料在1 3 m波段有較強的紅外輻射，說明這種方法製作紅外輻射煙火材料是可行的。 -
When the thickness increases up to a critical value, about 30 nm, the spotty rheed pattern gradually changes to streaky pattern, and the rheed oscillation curve appears. the rheed pattern of the ultra thin lno film deposited in the relatively high oxygen pressure is streaky pattern. with pumping the oxygen pressure to the relatively low value, the streaky rheed pattern gradually changes to spotty one
我們發現在較低的真空度下，即氧分壓處於2 10 - 4pa和3 10 - 3pa之間， lno晶格中的一個o2 -將會轉移兩個電子給兩個ni3 + ，並且移動到薄膜表面形成o2被泵抽走，從而導致鈣鈦礦結構的垮塌，其相應的rheed圖樣呈現出清晰而明亮的點，表明表面為較為粗糙的三維島狀結構。 -
When increasing the oxygen pressure, the rheed pattern changes to streaky one again. this rheed pattern transformation induced by the oxygen pressure is reversible. ex situ xps results indicate that the element ni of lno film deposited in the relatively low oxygen pressure with thickness below the critical value exists in the form as ni2 +, while as ni3 + in the relatively high oxygen pressure
隨著膜厚增加而超過約30nm的臨界厚度時，越來越多的晶格氧會移動到了薄膜表面，此時所提供的氧將使得后續生長的lno膜層重新形成鈣鈦礦結構，並以層狀方式外延生長。 -
Suitable polycrystalline znsxse1 - x film with zinc sulfide cubic structure and ( 111 ) preferred orientation that provided a good matching with the requirements of lclv were deposited on ito coated glass by mbe method. room temperature photo - responsivity measurements performed on these thin films show that
相比于用zns和se為生長源制備的znsxsel x薄膜，採用zns和znse化合物為源材料的實驗方法制備出的薄膜性能更優良，其晶粒尺寸普遍增大，柱狀晶形更完整。 -
A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation
利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。 -
The layers from substrate to top of the deposited film are ti substrate, buffer layer ( interface between substrate and film ), porous layer and lamellar layer
研究發現，從鈦合金到羥基磷灰石共有四層結構：鈦合金基體、鈦合金的氧化層、多孔的納米晶羥基磷灰石和花瓣狀的結晶良好的羥基磷灰石。 -
It shows the nanometer particles have automation to make the friction surface in a comparatively even state. 4 ) through tribology chemistry function, the nanometer cacoj and cao particles form a deposited film on the wear scar ' s surface or strengthen the surface through a small amount of metal ca ' s diffusion to improve the friction surface ' s a
（ 4 ）納米碳酸鈣和納米氧化鈣粒子通過摩擦過程中的摩擦化學作用在磨斑表面上形成了沉積膜，少量金屬鈣通過擴散作用滲透到鋼基體表面，形成表面強化層，提高了表面的耐磨性。 -
Vacuum deposited film
真空沉積膜 -
With mocvd film technology, film chemical composition is easier to control, deposition temperature lower, deposition speed higher, deposited film more compact, homogenous and flat. in this paper, firstly, the study of fgms, the study of cvd and mocvd, and the nucleation mechanism have been introduced. secondly, the fabracations of metal / metal and metal / ceramic fgms have been reported
本文在介紹功能梯度材料的研究進展， cvd 、 mocvd技術的研究概況以及mo （ co ） _ 6 ， fe （ co ） _ 5的成膜機制和工藝條件之後，著重報道了利用mocvd技術制備陶瓷薄膜，金屬金屬和金屬陶瓷功能梯度材料。
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