depositing system 中文意思是什麼

depositing system 解釋
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  • depositing : 沉澱的
  • system : n 1 體系，系統；分類法；組織；設備，裝置。2 方式；方法；作業方法。3 制度；主義。4 次序，規律。5 ...
  1. It does not need much area, not any pollution, not consuming much electricity power, not need much cost. gshp combined floor radiation air - conditioning system possess high seasonal average cop value and great capacity of edaphic depositing heat energy, can ease up supplied water temperature fluctuating with the change of the outdoor air temperature

    地源熱泵技術聯合地板輻射對房間進行冷暖聯供的形式，具有地源熱泵季節性平均性能系數高、土壤蓄熱能力強、能緩解空氣源熱泵存在的供冷供熱能力隨環境溫度波動大的矛盾等優點。
  2. With the numerical solution, an internal condensation critical curve can be calculated out by condensation theory and depositing theory, on the curve, the enter water ability equal to the out water ability, which can be used as the basis to determine the occurrence of internal condensation. but the result doesn ’ t coincide with the real completely. in this dissertation, we plan to get the critical curve by practical experiment results, because that the enter water ability only relates to the condensation density and the out water ability only relate to the volume ratio of the pneumatics system

    然而由凝結理論和沉積理論得到的計算結果往往與實際有一定偏差，本課題希望通過實驗的方法獲得內部結露臨界線，即系統進水能力和排水能力相等的曲線，由於系統的進水能力和充放氣過程中凝結水滴密度有關，排水能力和系統容積比有關，可以通過大量實驗總結出以凝結水滴密度和容積比表示的內部結露臨界曲線，作為判別內部結露是否發生的依據。
  3. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  4. Contrasting the results of simulation and the experiment for depositing the 3 inch thin films by icds technique, the center position of substrate and the target is in a 18mm offset, the thickness distribution homogeneity is under 8 %. based on the analyses of the theoretic heat distribution for the radiant heating system, a 3 inch size radiant heater fitting for the requirement is designed and made, whose temperature difference is under 6 %

    其次，對3英寸范圍內的膜厚分佈進行了理論模擬，在此基礎上和試驗結果對比分析，發現：在倒筒靶直流濺射裝置下，如果採用一種讓基片中心和靶中心處于相對偏心距離為18mm的位置來制備3英寸薄膜，其膜厚分佈的均勻度范圍控制在8以內。
  5. This system is used for monitoring and controlling the thin - film depositing procedure by real time measuring the transmittance and / or reflectance in broad spectral range

    通過在線測量膜層的光譜透射比或反射比對光學膜系進行監控。
  6. By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia, silicon nitride thin film with excellent anti - reflective and passivation effects was prepared. the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated. the effects of substrate temperature, the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched

    實驗表明，氮化硅薄膜的沉積速率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有降低，隨淀積功率增大而明顯增加；在襯底溫度300 ，射頻功率20w和硅烷氨氣流量比為1 ： 3的條件下氮化硅薄膜的沉積速率大約為8 . 6納米分。
  7. In the paper, the two - step approach, in which the deposition procedure was divided into two sections by decrease the substrate temperature or the bias voltage, was used in order to synthesize c - bn film by the conventional js - 450a rf system. the influence of process parameters for nucleation and growth of depositing c - bn was studied separately

    本論文使用傳統的js - 450a射頻濺射系統利用兩步法（降溫降偏壓法）沉積立方氮化硼薄膜，分別研究了各工藝參數對立方氮化硼成核和生長的影響。
  8. Study on simultaneous electrolysis depositing of ni - mno2 in sulphuric acid system

    2同時電沉積的研究
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