depositing substrate 中文意思是什麼

depositing substrate 解釋
堆積場基底
  • depositing : 沉澱的
  • substrate : n. 1. 底層，地層。2. 【無線電】（半導體工藝中的）襯底，基底。3. 【生物學】（生態學中的）基層；【生物化學】受質；被酶作用物。
  1. Depositing bi4ti3o12 ferroelectric thin films on ito glass substrate

    玻璃襯底上制備鈦酸鉍鐵電薄膜
  2. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  3. Contrasting the results of simulation and the experiment for depositing the 3 inch thin films by icds technique, the center position of substrate and the target is in a 18mm offset, the thickness distribution homogeneity is under 8 %. based on the analyses of the theoretic heat distribution for the radiant heating system, a 3 inch size radiant heater fitting for the requirement is designed and made, whose temperature difference is under 6 %

    其次，對3英寸范圍內的膜厚分佈進行了理論模擬，在此基礎上和試驗結果對比分析，發現：在倒筒靶直流濺射裝置下，如果採用一種讓基片中心和靶中心處于相對偏心距離為18mm的位置來制備3英寸薄膜，其膜厚分佈的均勻度范圍控制在8以內。
  4. Base on two - stage approach, we adjust experimental parameter to develop a new method ( three - stage approach ) to prepare c - bn thin films. the study proves that it is favorable to prepare bn thin films of high cubic phase content. depositing time and substrate bias voltage in the first stage are 5 min and - 180v respectively

    根據si片上bn薄膜的反射光譜r （ ）和熔融石英片上bn薄膜的反射光譜r （ ）和透射光譜t （ ）各自獨立的計算了bn薄膜的光學帶隙，利用兩種方法分別計算立方相含量均約為55 %的bn薄膜的禁帶寬度為5 . 38ev和5 . 4ev ，其結果均和由經驗公式計算得到的結果非常接近。
  5. Substrate negative bias voltage deeply impacts the nucleation and growth of cbn. there is a threshold value of bias voltage for depositing cbn

    襯底負偏壓對立方氮化硼的成核和生長有十分重要的影響，存在偏壓閾值，低於該值不能產生立方氮化硼。
  6. When the substrate temperature is changed from room temperature to 550 and the gas pressure is varied from 0. 1pa to 30pa, the structures of zno thin films are c - axis oriented multi - crystalline. the landscape orientation growing speed of crystal grains is controlled mainly by depositing speed of zn and o atoms, while c - axis developing speed is chiefly dominated by depositing speed and activity of zn and o atoms

    Sb _ 2o _ 3摻雜zno薄膜中sb以替位原子及化合物（ sb _ 2o _ 3和zn7sb2o12 ）等形式存在， zno呈混晶方式生長;摻雜薄膜在遠紫外波段的吸收顯著增強，吸收邊變得陡峭且向短波方向移動達5nm ，在可見光波段的吸收有所增強。
  7. This paper presents the effects of some features on the productivity of raw c60 materials, such as distance and approaching speed of electrodes, helium partial pressure and arc current etc. then we separate and purify the raw materials and obtain pure solid c60 of 99. 9 % and compare the purification efficiency and effect of different fluxion phase and fixed phase and discuss the effects of the experimental conditions, such as the depositing speed, the type of the substrate, the surface structure of the substrate and the temperature of the substrate. finally, we use xps, afm, ultraviolet, infrared and raman to analyze the component, structure and feature of the films qualitatively and quantitatively

    本文首先研究了氦氣分壓、弧電流大小、電極間距以及電極推進速度等實驗條件對制備c _ （ 60 ）粗品產率的影響；接著選用柱色譜法分離提純得到了純度大於99 . 9的c _ （ 60 ）固體，比較了不同流動相和固定相的提純效率和效果；然後採用自己改進后的真空鍍膜機，利用電阻式加熱蒸鍍方法，得到了純c _ （ 60 ）薄膜和不同摻雜比的銀摻雜薄膜；探討了沉積速率、襯底種類、襯底表面結構以及襯底溫度等實驗條件對薄膜結構的影響；最後通過xps ， afm ，紫外，紅外，拉曼對薄膜的成分、結構和特性作了定性和半定量分析。
  8. By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia, silicon nitride thin film with excellent anti - reflective and passivation effects was prepared. the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated. the effects of substrate temperature, the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched

    實驗表明，氮化硅薄膜的沉積速率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有降低，隨淀積功率增大而明顯增加；在襯底溫度300 ，射頻功率20w和硅烷氨氣流量比為1 ： 3的條件下氮化硅薄膜的沉積速率大約為8 . 6納米分。
  9. In the paper, the two - step approach, in which the deposition procedure was divided into two sections by decrease the substrate temperature or the bias voltage, was used in order to synthesize c - bn film by the conventional js - 450a rf system. the influence of process parameters for nucleation and growth of depositing c - bn was studied separately

    本論文使用傳統的js - 450a射頻濺射系統利用兩步法（降溫降偏壓法）沉積立方氮化硼薄膜，分別研究了各工藝參數對立方氮化硼成核和生長的影響。
  10. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  11. And the results have good repeatability, influence and its mechanism of substrate temperatures ( from 120 to 300 ) and heat treatment temperature ( 400, ih ) on the chemical composition, micro - structure and optical properties of tio _ ( 2 ) thin film deposited at the condition of pressure in depositing chamber being 2 x 10 - 2pa and deposite rate being o. znm - s - 1 are studied through modern analysis technologies

    Tio _ 2薄膜的化學計量和晶體結構直接影響薄膜的性能，本文採用xps 、 xrd 、 sem和uv - vis分光光度計研究了熱處理前後不同的基片溫度條件（ 120 、 200和300 ）對薄膜成分、結構和光學性能影響的規律及其機制。
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