deposition reaction 中文意思是什麼

deposition reaction 解釋
沉積反應
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  • reaction : n 1 反作用，反應；反沖；反動力。2 【政治學】反動，倒退；復古（運動）。3 【化學】反應，【物理學】...
  1. Deposition mechanism of electroless plating tin in acid chloride solutions was analyzed theoretically, and three steps were summed up, including period of replacement reaction, coexistence periods of copper - tin codeposition and self - catalyzed deposition, and period of self - catalyzed deposition

    從理論上系統地分析了酸性氯化物化學鍍錫的沉積機理，將其歸納為置換反應期、銅錫共沉積與自催化沉積共存期和自催化沉積期三個階段。
  2. Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in fig. 9.

    砷化三氫的反應是典型的摻雜化學反應，圖9顯示了該反應的淀積過程。
  3. It is shown that the liquid phase methods, in which particularly methods of the sol - gel, deposition, micro - lacteous, hydrothermal / solvothermal reaction and hydrolyze, should be mentioned, as the most wildly used method in the present

    指出液相法，尤其是溶膠凝膠法、沉澱法、水解法、微乳液法、水熱溶劑熱法等是目前制備納米金屬氧化物材料最廣泛應用的方法。
  4. The technique of producing metal matrix composite include powder metallurgy, casting ( including stirring casting process, in situ contact reaction process, liquid - phase metal infiltration process, co - spray deposition forming process ), reaction mechanic alloying process

    制備金屬基復合材料的工藝分為粉末冶金法、鑄造法（鑄造法細分為攪拌鑄造法、原位接觸反應法、液相浸滲法、共噴射沉積法） 、反應機械合金化技術。
  5. The calculated results show that, for low energy protons ( energy less than several decade mev ), the contribution of proton nuclear reaction to energy deposition can be neglected ; while for high energy protons ( energy greater than several hundred mev ), the great difference appears for the above two cases. this gives us an indication that the contribution of proton nuclear reaction to the energy deposition must be concerned for high - energy protons. the propagation process in material of thermal shock wave induced by high - energy intense - current pulsed proton beam irradiation is calculated for several different proton energies

    對于入射能注量為418 （ j cm ~ 2 ）脈沖寬度為0 . 1 s的矩形脈沖強流質子束，計算結果表明，由於質子束能量不同，引起的初始熱激波（ 0 . 1 s時刻的熱激波）有單峰結構，也有雙峰結構，不同能量的強流質子束引起的熱激波在傳播的過程中都會出現明顯的彈性前驅波。
  6. Abstract : based on the concept of space migration length of photo - activation species, the analytical expression of the total number n of photo - activation species that can reach a segment on the substrate in the cubic deposition reaction space is derived. the simulation of the relationship of deposition rate and position of substrate is also completed. the simulation result agrees with the experiment data well

    文摘:基於光激活物質空間遷移長度的概念，推導出方形反應空間中到達基片上單位面積的光激活物質總數的解析表達式，對光化學汽相沉積中淀積速率和基片位置的關系進行了模擬和分析.模擬結果同實驗結果符合良好
  7. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  8. In this work, the aspects those impose influences on the performances of the ag films such as the pretreatment of the basic tubes, the concentrations of the reactants, the reaction time were investigated. apart fffm this, great attention ^ was given to the study on the parameters in the process of ag deposition in which low concentration and high temperature, or high concentration and low temperature was alternatively adopted

    對銀膜的制備工藝及影響銀膜性能的因素如工藝條件、預處理過程、反應物濃度、反應時間等進行了研究，尤其對低濃度高溫沉積銀膜工藝與高濃度低溫沉積銀膜工藝的各影響因素進行了研究。
  9. Low temperature plasma has been extensively investigated for catalyst preparation, including plasma chemical synthesis of ultra - fine particle catalysts, plasma regeneration or plasma treatment of catalysts, plasma - assisted deposition of catalytically active compounds on carriers and combination of plasma and catalyst in reaction system

    摘要低溫等離子體技術在化學生產中的用途越來越廣泛，它在催化劑領域的應用主要表現在以下幾個方面：超細顆粒催化劑合成，催化劑再生，催化劑表面處理，活性組分沉澱到基體以及低溫等離子體系統中添加催化劑。
  10. Meanwhile, initial research on the nah2po2 concentration in the bath, shows that it can greatly improve the deposition rate of electroless tin and has the effect of positive promoting reaction dynamics too

    同時，對鍍液中次磷酸鈉的初步研究表明：它能明顯提高錫的沉積速度，對反應動力學有著積極的促進作用。
  11. The reaction mechanism of chemical deposition was studied, and the optimum reaction condition was obtained. the deposition of sns thin films by chemical bath with ultrasonication was studied

    在不同條件下制備樣品，初步得到了制備sns薄膜的優化條件，並研究了超聲輔助手段對薄膜品質的影響。
  12. The result indicated that the deposition reaction of amino - group doping was a kind of hydrogen escaping reaction, whose film was made from carbon, hydrogen and nitrogen

    結果果表明本實驗中摻胺碳膜沉積反應為脫氫反應。薄膜由碳、氫、氮三種元素所組成。
  13. For the liquid phase method, it is discovered that the optimal encapsulation is obtained at stalling ph equal 8. 5 by the analysis of the influence of ph on the compactness. for the atmospheric chemical vapor deposition, the optimal experimental condition of coating is determined by the analysis of the influence of different reaction temperature and different flow rate of o2 and different reaction time on the compactness of the coating and the luminescent performance of the phosphor in the experimental scope

    對于液相包膜，通過分析陳化ph值對膜層緻密性能的影響，發現在ph值為8 . 5陳化能夠得到最佳的包覆；對于化學氣相沉積法，通過分析不同溫度、不同氧流速、不同時間對包覆膜層緻密性能和zns ： cu材料的發光性能的影響，找到了該實驗范圍內包覆的最佳條件。
  14. The research introduced a domestic microwave plasma chemical vapor deposition ( mpcvd ) equipment with a quartz glass window and watercooled stainless steel reaction chamber in 2450mhz / 5 kw

    詳細介紹了自行研製的2450mhz 5kw帶有石英玻璃窗、水冷卻不銹鋼腔體微波等離子體化學氣相沉積（ mpcvd ）裝置。
  15. The research introduced a domestic microwave plasma chemical vapor deposition ( mpcvd ) equipment with a quartz glass window and water - cooled stainless steel reaction chamber in 2450mhz / 5 kw

    本文詳細介紹了自行研製的2450mhz 5kw帶有石英玻璃窗、水冷卻不銹鋼腔體微波等離子體化學氣相沉積（ mpcvd ）裝置。
  16. From the research results, it can be concluded that the formation of early hydrates achieves through the recycle process of dissolution - deposition and the late through the reaction similar to the sinter of solid particles

    結合sem 、水化歷程、水化機理和結構特徵的研究結果，早期的水化產物通過溶解沉澱過程生成，後期是通過類似於固相燒結的化學反應生成。
分享友人
分享到 Line

分享到臉書