diffraction apparatus 中文意思是什麼

diffraction apparatus 解釋
衍射設備
  • diffraction : 分解
  • apparatus : n （pl apparatus（es））1 器具，裝置，設備，機器，器械，儀器。2 （身體上的）器官。3 政治機構，機...
  1. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析（ xrd ） 、掃描電子顯微鏡（ sem ） 、 alpha - step500型臺階儀等儀器對薄膜進行表徵，分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。
  2. The composition and properties of three types of titanium investment materials are examined by x - diffraction apparatus, hydraulic pressure tester and thermal expansion coefficient apparatus, respectively

    摘要應用x射線衍射儀、液壓試驗機和熱膨脹儀檢測國外三種體系鑄鈦專用包埋料的組成和性能。
  3. From the single - slit diffraction experiment of apparatus for fraunhofer diffraction, it is seen that, in the single - slit diffraction pattern, while incident light is perpendicular to single - slit plane, bright fringe appears in the middle and symmetrical arrays of bright fringe with gradually decreasing intensity appear on both sides

    從夫朗和費衍射裝置的單縫衍射實驗中可以看到：在入射光垂直於單縫平面時的單縫衍射實驗圖樣中，中間有特別明亮的亮紋，兩側對稱地排列著一些強度逐漸減弱的亮紋。
  4. In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased

    Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。
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