diffusion treatment 中文意思是什麼
diffusion treatment
解釋
擴散處理-
Diffusion treatment, relies upon an immersion or spray treatment.
擴散處理法依靠常壓浸注或噴霧處理。 -
The usual diffusion random walk treatment does not consider any interaction between the particles.
一般的擴散無規則運動理論並不考慮粒子間的任何作用。 -
Pulse electric current heat treatment ( pecht ) developed by sodick, ltd., of japan, is a recently developed material processing method which consists of spark plasma sintering and welding, plasma activated sintering and welding, big pulse electric current ( bpec ) diffusion welding etc. the following are basic merits of pecht : rapid heating and cooling ; short sintering or welding time ; lowering sintering or welding temperature
脈沖電流熱加工（ pulseelectriccurrentheattreatment ，比如燒結，焊接等）是九十年代發展起來的一種材料快速制備新技術，它包括放電等離子燒結與焊接、等離子活化燒結與焊接、脈沖大電流擴散焊接等。它具有升溫、降溫速度快、能在較低的溫度下燒結或焊接以及時間短的特點。 -
The optimum conditions for air electrode preparation were shown as follow : 20 % ptfe and 20 % mno2 in active layer, thickness of active layer 0. 15 - 0. 25mm and the ratio of active carbon to ethine black 4 : 1 ; 60 % ptfe in the gas diffusion and waterproof layer, employing na2so4 as pore - making agents, thickness 0. 35 - 0. 45mm, colding forming and layer sequence catlytic layer / gas diffusion and waterproof layer / current collector layout ; employing 40 meshed nickel screen as current collector and thermal treatment temperature over 200
確定了制備空氣電極的優化工藝條件，催化層中ptfe含量約20 ， mno _ 2的最佳含量約為20 ，催化層中活性炭和乙炔黑的比例為4 ： 1 （質量比） ，厚度在0 . 15 - 0 . 25mm之間。防水透氣層中ptfe的含量約為60 ，以無水硫酸鈉作為造孔劑，厚度一般為0 . 35 - 0 . 45mm 。電極各層採用催化層/防水透氣層/集流體的排布方式，冷壓成型，熱處理對空氣電極的性能影響較大，熱處理溫度不低於200 。 -
Re - b - c - n multi - elements co - diffusion treatment for h13 hot working die steel
13熱作模具鋼稀土硼碳氮多元共滲 -
The voltage of lithium - intercalation reaction, impedance and structural stability of intercalation - type cathode material were analysed and calculated. theoritical results show that the reaction voltage depends on the content of lithium and the bond energy, and that the key ways to lower the electrode impedance are to increase the electronic conductivity of the electrode and the diffusion coefficient of lithium ion in the host and to decrease the size of powder. in addition, the thermal stability of lithium - insertion structure can be improved by using crystallographic co - lattice theory and doping treatment
本文從嵌入式陰極材料的嵌鋰反應的電壓、阻抗及結構穩定性的分析和理論計算著手，得到了電壓取決于基體中各種離子間的鍵能及鋰含量、降低電極阻抗的關鍵是提高電子型導電性和li ~ +在基體中的擴散系數及減小粉末粒度的理論依據及其利用晶體的共格原理和摻雜改性的方式來提高材料嵌鋰結構的熱穩定性的設計思路。 -
Based on ladle refining, wide flat anvil forge with great forging ratio, heat treatment process of " normalizing + spheroidizing + diffusion hydrogen ", the cold roll blank has been forged succesfully, and the percent of pass is up to 90. 5 %
採用鋼包精煉爐冶煉、寬平砧大壓下量鍛造、 「正火+球化+擴氫」的熱處理工藝，成功製造了冷輥坯，合格率達90 . 5 。 -
Abstract : based on ladle refining, wide flat anvil forge with great forging ratio, heat treatment process of & quot; normalizing + spheroidizing + diffusion hydrogen & quot;, the cold roll blank has been forged succesfully, and the percent of pass is up to 90. 5 %
文摘:採用鋼包精煉爐冶煉、寬平砧大壓下量鍛造、 「正火+球化+擴氫」的熱處理工藝，成功製造了冷輥坯，合格率達90 . 5 。 -
Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige -
The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )
我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。 -
Vacuum coating machine, vacuum coating equipment, diffusion pump, vacuum plating factory, vacuum coating, ion injector, vacuum thermal treatment, vacuum thermal treatment equipment, vacuum equipment, thermal treatment equipment - longkou bite vacuum technology co., ltd
真空鍍膜機，真空鍍膜設備，擴散泵，真空電鍍廠，真空鍍膜，離子注入機，真空熱處理，真空熱處理設備，真空設備，熱處理設備-口市比特真空技術有限公司 -
Meaning of ions diffusion coefficient in sapphire diffusion heat treatment
離子擴散系數在藍寶石擴散熱處理改色中的作用 -
Chromium diffusion treatment
滲鉻處理 -
The report for sio2 passivation and forming gas treatment utilization in domestic scale manufacture as well as the detail abroad technologies has not been read. porous silicon heavy phosphorous diffusion passivation and grain boundary recombination velocity for multicrystalline silicon solar cells have not been reported
其中sio _ 2表面鈍化和forminggas處理在規模化生產上的應用國內未見報導，國外技術無詳細報導，多孔硅重磷擴散多晶硅鈍化及多晶硅晶界復合速度表示未見報道。 -
Diffusion / oxidation furnace is a kind of very important equipment which is used in semiconductor process production line. it is applied in the manufacture process of the discrete semiconductor devices and integrated circuit which have diffusion, oxidation, annealing and alloying processing. it is also used in special temperature treatment of other material and is an auto - equipment which has the command of long time working, high precision and high stability
擴散/氧化爐是半導體工藝生產線上非常重要的一種工藝設備，用於分立半導體器件、集成電路製造過程中各種擴散、氧化、退火及合金工藝，也適用於對其他材料的特殊溫度處理，是一種要求能長時間連續工作、高精度、高穩定性的自動控制設備。 -
The source of fe 3 + was from two contributions, one from the [ fefg ] 3 - ions formed by a reaction between the treatment solution and the stainless steel substrate and the other from the diffusion of fe element from the stainless steel substrate into the tio2 thin film at 500 c or a higher calcination temperature
對于液相沉積法制備的ti02薄膜，基片對薄膜的組成和表面形貌有明顯的影響。本實驗中，在石英玻璃，普通玻璃和不銹鋼表面制備了tio :復合薄膜，並討論基體對薄膜的元素組成和表而形貌的影響，提出這種復合薄膜的形成機理。 -
Two sources of si were identified. one was from the sif62 - ions, which were formed by a reaction between the treatment solution and quartz substrate. the other was attributed to the diffusion of si from the surface of quartz substrate into tio2 thin film at 700 c or higher calcination temperatures
薄膜中的si元素來源於二部分，其中一部分來源於反應液與石英玻璃基片反應所生成的[ sif _ 6 ] ~ （ 2 - ）離子，另一部分則來自於薄膜在高溫熱處理（ 700或高於700 ）過程中從石英玻璃表面擴散到薄膜中的si元素。
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