diffusion tube 中文意思是什麼
diffusion tube
解釋
擴散管-
The gas field in pemfc means the gas distribution in gas source, gas inlet tube ( scale of m ), gas - blower, gas manifold ( scale of cm ), channel ( scale of mm ), diffusion layer ( scale of um ), hydrophobic layer and catalyst layer ( scale of nm ). the aim of changing the scales is to make oxygen reach reaction area as evenly as possible
Pemfc的氣場指在氣源、進氣管（分米級） 、風機、進氣箱（厘米級） 、流道（毫米級） 、擴散層（微米級） 、疏水層（亞微米級） 、催化層（納米級）中的氣體分佈，每一級尺度的變化是為了氣體的進一步均勻化。 -
Current research of the technique of ga diffusion and the negative resistance effect of open - tube ga - diffusion transistor are emphasized
重點介紹了目前開管ga擴散工藝的發展現狀和開管擴鐮晶體管負阻效應的研究現狀。 -
Yet the outstanding shortcoming of open - tube ga diffusion is the apparent negative resistance effect in the ic - vce characteristic curve, which is not what we hope
盡管如此開管擴鎵的突出缺點是在特性曲線中的負阻效應較為明顯，負阻現象的存在是我們不希望的。 -
With the development of doping technology, the formation of the base region in high - voltage transistor can be made by b diffusion technology, b - a1 paste - layer diffusion technology, close - tube ga - diffusion technology and open - tube gallium - diffusion technology
隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁塗層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。 -
At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。 -
The porous diffusion type silencer is widely used to reduce the air flow noise because of its small volume and high noise attenuating ability. the out case of the silencer plays a very important role in reducing noise. the effect of the hole ' s shape, diameter and the distance between neighboring holes as well as the matchup between the case and the sound absorbing material tube are investigated experimentally. the relation between the out - flow noise and the gas velocity distribution is carefully studied for two different kinds of matchup between the case and the sound absorbing material tube. some useful results are gotten, which may be valuable to the design of the silencer
多孔擴散型消聲器由於其體積小、消聲性能高而廣泛應用到排氣噪聲的降低上，其外殼對消聲器的消聲性能具有重要作用.本文對此類消聲器外殼的孔型、孔徑和孔距以及外殼同消聲材料的配合方面進行了細致的實驗研究，特別對外殼與消聲材料的配合與其排放噪聲以及外部流場之間的關系進行了探討，得到了一些有用的結論，對消聲器性能的提高具有一定指導意義。 -
Study of diffusion tube calibration gases preparation and dynamic volumetric method
擴散管標準氣體及其動態配氣方法的研究 -
The study indicates that, the slippage effect is a combined result of gas molecule slip on capillary wall and gas molecular diffusion inside capillary tube, and also a result of combination of concentration and pressure fields
研究認為，氣體滑脫效應是毛細管壁處氣體分子滑流和毛細管內部氣體分子擴散的綜合效應，是濃度場和壓力場作用疊加的結果。 -
In recent years, by use of the characters including high - penetration ability of ga in sio2, small diffusion stress in si, large diffusion efficiency and large solid - solubility, open - tube ga - diffusion technology in sio2 / si system was realized
近年來，巧妙地利用ga具有強穿透sio _ 2的能力，在si中具有擴散應力小、擴散系數大、固溶度較大等特點，實現了開管sio _ 2 si系下的擴散。
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