diode characteristic 中文意思是什麼

diode characteristic 解釋
二極體特性
  • diode : n. 【無線電】二極體。
  • characteristic : adj 有特性的；表示…特性的，…特有的。 Japan s characteristic art 日本特有的藝術。n 特性，特徵，性...
  1. Based on the structure and emission characteristic of the diode bar, a numerical calculation. model of the thermal dissipation was proposed and a related simulation of the effects of heatsinks parameters on the performance of the packaged laser was carried out

    根據二極體條結構及輻射特性，建立了散熱過程數值計算模型，數值模擬研究了熱沉參數對封裝激光器性能的影響。
  2. And the field emission characteristic of the cnt - trunk was test by a simple diode structure

    而所成長的奈米碳管以簡單的二極量測來測試其場發射特性。
  3. As the experiment results show, multiple reasons led to the offset of oscillating frequency, including diode ’ s nonlinear characteristic, fluctuation of electrical source voltage, traction of load impedance, change of environmental temperature and humidity and the design of circuit

    實驗結果表明多種因素引起了振蕩頻率的偏移，包括二極體的非線性、電源電壓的波動、負載的牽引、環境溫度濕度變化以及電路板設計方面的因素等。
  4. B ) the damage of electro parts due to electrostatic mostly introduce the characteristic of electrostatic discharge ; the style of invalidation about electro parts, and analysis it " s mechanism ( include the laser diode ) c ) expatiate the damage of the human body - electrostatic ; the way of it get electrostatic and calculation method of it ' s quantity who is as a main type of electrostatic d ) the main technique of design in electrostatic defends. and established the chmavc electrostatic defends system

    靜電放電對電子元器件的危害主要介紹了靜電放電損害的特點；電子元器件的失效類型和失效機理，並對各種類型的失效進行了分析。 （包括激光二極體）人體靜電作為靜電的主要類別，從帶電方式、帶電量的計算和人體靜電危害上進行了闡述。靜電防護的設計方法和chmavc靜電防護體系的建立
  5. On the base of the study on sige material physics characteristic, sige / si hetero - junction characteristic, we dissertate the advantage of sige / si hetero - junction power diodes and establish more accurately physical models and propose two novel kinds of fast and soft recovery p + ( sige ) - n - - n + hetero - junction power diodes : the one is p + ( sige ) - n " - n + diode with the multiplayer gradual changing doping concentration in the n - region, and the other is p + ( sige ) - n " - n + diode with ideal ohmic contact on the cathode interface

    本文針對sige材料的物理特性、 sige si異質結特性建立了準確的物理參數模型。在詳細論述了sige si異質結功率二極體良好特性的基礎上，提出了兩種快速軟恢復sige si功率二極體新結構： n ~ -區採用多層漸變摻雜和陰極側採用理想歐姆接觸。
  6. Secondly, basing on the theory of on - off gain of small signal, the raman gain coefficient for frequency shift between 0. 5 and 20 thz of standard sigle mode optical fiber is measured by pump - probe method through a super luminescent diode ( sld ) as a broadband small signal probe source. thirdly, numerical simulation analysis of gain characteristic of raman fiber amplifier for c band wdm signal light is made according to the raman gain coefficient of the fiber measured before through target and four rank runge - kutta method. at the invariability of wavelength and maximum power of each of two pumps, schematic of powers of two pumps for best flatness on c band wdm optical gain was found out, at the same time, the factors of resulting in gain saturation is analyzed, too

    本文首先應用經典的電磁理論對拉曼光纖放大器的工作機制進行了分析，然後，根據小信號理論推導出的開關增益求出了光纖拉曼增益系數的表達式，採用泵浦-探測波的方法，利用超輻射激光二極體（ superluminescentdiode簡稱sld ）作為探測光源，測量了所用標準單模光纖頻移為0 . 5 - 20thz的拉曼增益系數，之後根據所測得的光纖的拉曼增益系數譜對應用該類光纖構成的放大c波段wdm光信號的拉曼光纖放大器的增益特性採用打靶法和四階龍格- - -庫塔進行了數值計算，在給定了兩個泵浦光源的波長和最大功率后，找出了反向泵浦情況下使c波段wdm光源增益最平坦的兩個泵浦的各自最佳功率，同時也分析了導致信號光飽和的原因。
  7. The researching results indicate that using the two kinds of novel structure, the fast - switching and the soft recovery characteristics of the device are much improved but not notable changed in forward drop, and the temperature characteristic is improved, too. most of the characteristics are far better than the normal pin diode structures

    研究結果表明，在採用?基區漸變摻雜和臺面結構后的p ~ + （ sige ） - n ~ - - n ~ +異質結中，我們得到了更快而軟的反向恢復特性，和更低通態壓降的正向導通特性，且溫度特性也有明顯改善。
  8. Structure design and characteristic of high - current electron - beam foilless diode

    強流電子束無箔二極體結構設計與特性研究
  9. Organic electroluminesence display is a fire - new flat panel display technology which was reputed having a fancy characteristic, because its luminescence is similar to led, it is also called oled ( organic light emitting diode )

    有機電致發光顯示（ organicelectroluminesencedisplay ）技術被譽為具有夢幻般顯示特徵的平面顯示技術，因其發光機理與發光二極體（ led ）相似，所以又稱之為oled （ organiclightemittingdiode ） 。
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