dislocation formation 中文意思是什麼

dislocation formation 解釋
位錯形成
  • dislocation : n. 1. 【醫學】脫位，脫臼；離位，轉位，位移。2. 【地質學；地理學】斷層，斷錯；【物理學】位錯。3. 混亂，打亂。
  • formation : n. 1. 構成，形成；設立；編制。2. 組織，構造；形態；形成物，構造物；【軍事】編隊，隊形；兵團。3. 【地質學；地理學】層；組； 【生物學】社區；（植物）群系。adj. -al
  1. Through the all - sided tectonic analyses, it can be deduced that there are two aspects will be the hidden defects to the dam and the engineering stability of the reservoir area. one is the dislocation interfaces resulting from the the majiaheba faultage ' s thrusting overriding and other causes of formation. the second is the region of strong deformation, such as the above of the dam, middle and high positions of the lava layers and the regions of overprint of the structure of ne to the one of nw, which should be taken into account especially

    通過區域和壩區錯動帶的全面構造解析，認為由馬家河壩斷層逆沖推覆作用而在壩區形成的向金沙江下游緩傾的錯動帶以及其它成因的錯動帶是壩區和庫區工程穩定的隱患，尤其是變形較強的壩址區上游區、中高層位以及北西向構造期的錯動帶疊加於北東向構造期錯動帶的部位，更應該引起足夠的重視。
  2. The formation of the dislocation interfaces keeps close relation with the areal structures and the tectonic stress fields of the areal structure

    壩區錯動帶的形成與區域構造及其構造應力場密切相關。
  3. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
  4. In undoped lec si - gaas single crystal, the density of dislocation is usually very high and the dislocations easily form the cellular structure. the formation and distribution of other impurities and point defects are closely correlative with the cell structure and then result in the non - uniformity distribution of electrical and optical characteristic of gaas material

    而非摻lecsi - gaas中的高密度位錯，往往形成胞狀結構；其它雜質和點缺陷的形成與分佈與該結構密切相關，並導致gaas材料電學和光學特性的不均勻。
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