dopant concentration 中文意思是什麼

dopant concentration 解釋
雜物濃度
  • dopant : n. 【物理學】摻雜劑，摻雜物。
  • concentration : n. 1. 集中。2. 【化學】提濃，蒸濃，濃縮；濃度；稠密度；【礦物】汰選，選礦，富化。3. 集中注意，專心。
  1. The oxide and reduce potential and the dopant concentration. the experiments of degradation methyl blue a1so showed that the photocatalytic activity could be greatly improved with vzos - loaded tio2, maybe that loading v2o5 would accelerate the electron captured and charge transferring, change the samp1e surface hydrophilic and absorption

    納米tio _ 2 - v _ 2o _ 5復合光催化劑對次甲基藍的降解實驗表明，復合v _ 2o _ 5后tio _ 2可以加速電子捕獲和電荷遷移速率，改變了樣品表面吸附親合力，使降解效率相比純tio _ 2有很大提高。
  2. The bandgap is found to broaden with increasing dopant concentration, and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength, with both cases being attributed to the burstein - moss shift. we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films. using sol - gel technique, highly c - axis oriented zno films with 5 mol. %

    為了研究zno : al薄膜在紫外光探測方面的性能，我們採用溶膠-凝膠旋塗法在si襯底上生長出具有高度c軸取向的zno : al薄膜，摻al濃度為5mol . % ，並以此作為有源區成功制備出了au / zno : al / au光電導型紫外探測器的原型器件，並對其i - v特性、紫外光響應和光致發光等方面的性能進行了研究。
  3. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  4. The thermoelectric properties of the samples greatly depend on the doping elements and constituent concentration. the sample with la - dopant shows better thermoelectric performances than those with other three dopants. it should be pointed out that there exists an appropriate range of doping values to improve the thermoelectric properties of the samples

    這四種摻雜劑都不同程度的提高了材料的熱電性能，但只有摻la能夠很好的改善材料的性能，而且摻雜量不是越大越好，而是表現出有一個最優摻雜的限度。
  5. The cooler and temperature controller of nd : yap rod are improved and the lower dopant concentration of the nd : yap ( 0. 6 at. % )

    除了改進冷卻控溫系統外，選擇摻雜濃度較低的激光晶體，有利於高效散熱，得到更穩定的激光輸出。
  6. Testing of materials for semiconductor technology ; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact

    半導體技術材料的試驗.用電容-電壓法和水銀接點確定
  7. The laser damage threshold of the ybyp _ xv _ ( 1 - x ) o _ 4determined by nd : yag laser, which showed a decreasing tendency with the increase of the dopant concentration

    利用nd : yag激光器測試晶體的激光損傷閾值，隨著摻雜離子濃度的增大，激光損傷光功率密度呈減小趨勢。
  8. The upconverted emission after 980 nm excitation revealed an enhancement of the red [ 4f9 / 2 4i15 / 2 ] emission with respect to the green [ ( 2h11 / 2, 4s3 / 2 ) 4i15 / 2 ] emission when the dopant concentration is increased

    在納米晶和體材料中均觀察到980nm激發下紅色和綠色上轉換發光，紅光與綠光的相對強度比隨著濃度的增大而增大。
  9. From then on, the above two shortcomings had been overcome. impurity concentration and junction depth can be accurately controlled and freely adjusted. both low and high dopant concentration can be gained easily, and ideal distribution of ga in si can also be achieved with uniform surface concentration, good repeatability and high eligibility and excellence ratio, which have greatly improved comprehensive performances of the devices

    此工藝發明以來，克服了上述兩者的弊端，雜質濃度和結深能準確控制而又能任意調整，可進行低、高濃度階段性摻雜，得到元素ga在si中的理想分佈，而且表面濃度均勻一致、重復性好、合格率和優品率高，改善和提高了器件的綜合性能。
  10. ( 1 ) effects of externally applied electric fields on photorefractive two - beam coupling are analyzed. theoretic dependence of the intensity gain factor on applied field e0 in sbn : 60 is presented. and the experimental results obtained in two sbn : 61 : cr crystal samples with different dopant concentration show clearly that for properly applied fields, a larger f can be achieved effectively than that obtained with no field applied

    由兩塊不同摻cr濃度的sbn 61 cr晶體得到的實驗結果同時表明，適當的外電場作用能夠有效提高晶體的二波耦合增益，並且，外電場的作用使晶體的響應速度大大提高，而晶體的最佳耦合角與外電場之間沒有明顯的依賴關系。
  11. 1 、 through the theoretical analysis and the medici simulation, according to the design directive, the structural parameters are designed comprehensively, including the dopant concentration and the depth of the emitter, the base dopant concentration and the depth ( especially the ge ratio ), the dopant concentration and the depth of the collector

    主要工作是: 1 、通過理論分析和medici模擬，綜合設計得出符合設計指標的結構參數，主要包括:發射區的摻雜濃度和厚度?基區的摻雜濃度和厚度及基區中ge的組分比?集電區的摻雜濃度和厚度。
  12. Undoped bn films exhibit a resistivity of 1. 8 x 10 " q cm and those of doped are 7. 3 x107 q cm. the influence of process parameters for doping studied, it showed that both s fountain temperature and substrate temperature impact the resistivity evidently. analyzed by xps and aes, s dopant concentration is made some difference with substrate negative bias voltage

    研究了工藝參數對薄膜電阻率的影響，實驗表明硫源加熱溫度和襯底溫度對氮化硼薄膜的電阻率有明顯影響，直流負偏壓對薄膜的電阻率並沒有明顯影響， xps光電子能譜表明直流負偏壓對薄膜中的硫含量有一定影響。
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